Can Swimming Microalgal Cells be Vehicles for ZnO Nanoparticle Transportation and Thus Lead to Zn Diffusion?

2021 ◽  
Vol 106 (4) ◽  
pp. 637-646
Author(s):  
Shuai Mao ◽  
Hongxia Liu ◽  
Jiji Li ◽  
Yahong Guo ◽  
Wei Ma ◽  
...  
Catalysts ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 54
Author(s):  
Yu-Ming Chu ◽  
Hafiz Muhammad Asif Javed ◽  
Muhammad Awais ◽  
Muhammad Ijaz Khan ◽  
Sana Shafqat ◽  
...  

The photocatalytic pretreatment of lignocellulosic biomass to oxidize lignin and increase biomass stability has gained attention during the last few years. Conventional pretreatment methods are limited by the fact that they are expensive, non-renewable and contaminate the anaerobic digestate later on. The present study was focused to develop a metal-derived photocatalyst that can work with visible electromagnetic spectra light and oxidize commercial lignin liquor. During this project the advanced photocatalytic oxidation of lignin was achieved by using a quartz cube tungsten T3 Halogen 100 W lamp with a laboratory manufactured TiO2-ZnO nanoparticle (nanocomposite) in a self-designed apparatus. The products of lignin oxidation were confirmed to be vanillic acid (9.71 ± 0.23 mg/L), ferrulic acid (7.34 ± 0.16 mg/L), benzoic acid (6.12 ± 0.17 mg/L) and p-coumaric acid (3.80 ± 0.13 mg/L). These all products corresponded to 85% of the lignin oxidation products that were detectable, which is significantly more than any previously reported lignin pretreatment with even more intensity. Furthermore, all the pretreatment samples were supplemented in the form of feedstock diluent in uniformly operating continuously stirred tank reactors (CSTRs). The results of pretreatment revealed 85% lignin oxidation and later on these products did not hinder the CSTR performance at any stage. Moreover, the synergistic effects of pretreated lignin diluent were seen that resulted in 39% significant increase in the methane yield of the CSTR with constant operation. Finally, the visible light and nanoparticles alone could not pretreat lignin and when used as diluent, halted and reduced the methane yield by 37% during 4th HRT.


2021 ◽  
pp. 50947
Author(s):  
Yida Liu ◽  
Huie Zhu ◽  
Akira Watanabe ◽  
Shunsuke Yamamoto ◽  
Tokuji Miyashita ◽  
...  

Author(s):  
Lichen Zhang ◽  
Xiaobo La ◽  
Xuyuan Zhu ◽  
Jing Guo ◽  
Ling Juan Zhao ◽  
...  
Keyword(s):  

2014 ◽  
Vol 26 (2) ◽  
pp. 87-95 ◽  
Author(s):  
J. Mittal ◽  
K.L. Lin

Purpose – This paper aims to compare the reflow and Zn diffusion behaviors in Sn-Zn and Sn-8.5Zn-0.5Ag-0.01Al-0.1Ga (5E) solders during soldering on a Ni/Cu substrate under infrared (IR) reflow. The study proposes a model on the effect of various elements particularly Zn diffusion behavior in the solders on the formation of intermetallic compounds (IMCs). Design/methodology/approach – The melting activities of two solders near their melting points on copper substrates are visualized in an IR reflow furnace. Reflowed solder joints were analyzed using scanning electron microscope and energy dispersive X-ray spectroscopy. Findings – Reflow behaviors of the solders are similar. During melting, solder balls are first merged into each other and then reflow on the substrate from top to bottom. Both solders show a reduced amount of Zn in the solder. Theoretical calculations demonstrate a higher Zn diffusion in the 5E solder; however, the amount of Zn actually observed at the solder/substrate interface is lower than Sn-9Zn solder due to the formation of ZnAg3 in the solder. A thinner IMC layer is formed at the interface in the 5E solder than the Sn-Zn solder. Research limitations/implications – The present work compares the 5E solder only with Sn-Zn solder. Additional research work may be required to compare 5E solder with other solders like Sn-Ag, SnAgCu, etc. to further establish its practical applications. Practical implications – The study ascertains the advantages of 5E solder over Sn-Zn solder for all practical applications. Originality/value – The significance of this paper is the understanding of the relation between reflow behavior of solders and reactivity of different elements in the solder alloys and substrate to form various IMCs and their influence on the formation of IMC layer at solder/substrate interface. Emphasis is provided for the diffusion behavior of Zn during reflow and respective reaction mechanisms.


2017 ◽  
Vol 9 (22) ◽  
pp. 18474-18481 ◽  
Author(s):  
Wei Zhao ◽  
Ji-Shi Wei ◽  
Peng Zhang ◽  
Jie Chen ◽  
Ji-Lie Kong ◽  
...  

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Daiki Itohara ◽  
Kazato Shinohara ◽  
Toshiyuki Yoshida ◽  
Yasuhisa Fujita

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.


1987 ◽  
Vol 92 ◽  
Author(s):  
A. Usami ◽  
Y. Tokuda ◽  
H. Shiraki ◽  
H. Ueda ◽  
T. Wada ◽  
...  

ABSTRACTRapid thermal processing using halogen lamps was applied to the diffusion of Zn into GaAs0.6 P0.4:Te from Zn-doped oxide films. The Zn diffusion coefficient of the rapid thermal diffused (RTD) samples at 800°C for 6 s was about two orders of magnitude higher than that of the conventional furnace diffused samples at 800°C for 60 min. The enhanced diffusion of Zn by RTD may be ascribed to the stress field due to the difference in the thermal expansion coefficient between the doped oxide films and GaAs0.6P0.4 materials, and due to the temperature gradient in GaAs0.6P0 4 materials. The Zn diffusion coefficient at Zn concentration of 1.0 × l018 cm−3 was 3.6 × 10−11, 3.1 × 10−11 and 5.0 × 10−12 cm2 /s for the RTD samples at 950°C for 6 s from Zn-, (Zn,Ga)- and (Zn,P)-doped oxide films, respectively. This suggests that Zn diffusibility was controlled by the P in the doped oxide films.


1970 ◽  
Vol 41 (1) ◽  
pp. 280-285 ◽  
Author(s):  
R. L. Mozzi ◽  
J. M. Lavine
Keyword(s):  

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