Fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates using XeF2 enhanced focused ion-beam etching

2009 ◽  
Vol 96 (4) ◽  
pp. 819-825 ◽  
Author(s):  
J. Kettle ◽  
R. T. Hoyle ◽  
S. Dimov
2011 ◽  
Vol 7 (4) ◽  
pp. 594-597
Author(s):  
Zhan-Shuo Hu ◽  
Fei-Yi Hung ◽  
Shoou-Jinn Chang ◽  
Bohr-Ran Huang ◽  
Bo-Cheng Lin ◽  
...  

1999 ◽  
Vol 4 (S1) ◽  
pp. 769-774 ◽  
Author(s):  
C. Flierl ◽  
I.H. White ◽  
M. Kuball ◽  
P.J. Heard ◽  
G.C. Allen ◽  
...  

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.


1990 ◽  
Vol 11 (1-4) ◽  
pp. 409-412 ◽  
Author(s):  
R.J. Young ◽  
J.R.A. Cleaver ◽  
H. Ahmed

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Kuball ◽  
M. Benyoucef ◽  
F.H. Morrissey ◽  
C.T. Foxon

AbstractWe report on the nano-fabrication of GaN/AlGaN device structures using focused ion beam (FIB) etching, illustrated on a GaN/AlGaN heterostructure field effect transistor (HFET). Pillars as small as 20nm to 300nm in diameter were fabricated from the GaN/AlGaN HFET. Micro-photoluminescence and UV micro-Raman maps were recorded from the FIB-etched pattern to assess its material quality. Photoluminescence was detected from 300nm-size GaN/AlGaN HFET pillars, i.e., from the AlGaN as well as the GaN layers in the device structure, despite the induced etch damage. Properties of the GaN and the AlGaN layers in the FIB-etched areas were mapped using UV Micro-Raman spectroscopy. Damage introduced by FIB-etching was assessed. The fabricated nanometer-size GaN/AlGaN structures were found to be of good quality. The results demonstrate the potential of FIB-etching for the nano-fabrication of III-V nitride devices.


Author(s):  
David O. Kazmer ◽  
Stephen P. Johnston ◽  
Mary E. Moriarty ◽  
Christopher Santeufemio

Methods are presented for self-alignment and assembly of objects with micron and nanometer-level features. The approach is a combination of kinematic coupling and elastic averaging in which mating alignment features spanning multiple length scales are successively brought into contact. When the objects are pressed together, the larger alignment features cause necessary deformation to ensure adequate alignment at the smaller length scales. Analytical and numerical modeling indicate that the largest alignment features can be designed to generally resolve global systematic errors while the smaller alignment features can correct local errors to achieve sub-micron alignment. Physical realization with ion beam etching, deposition, and thermal imprint lithography are also discussed.


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