Passive Multi-Scale Alignment

Author(s):  
David O. Kazmer ◽  
Stephen P. Johnston ◽  
Mary E. Moriarty ◽  
Christopher Santeufemio

Methods are presented for self-alignment and assembly of objects with micron and nanometer-level features. The approach is a combination of kinematic coupling and elastic averaging in which mating alignment features spanning multiple length scales are successively brought into contact. When the objects are pressed together, the larger alignment features cause necessary deformation to ensure adequate alignment at the smaller length scales. Analytical and numerical modeling indicate that the largest alignment features can be designed to generally resolve global systematic errors while the smaller alignment features can correct local errors to achieve sub-micron alignment. Physical realization with ion beam etching, deposition, and thermal imprint lithography are also discussed.

Author(s):  
Yogesh Jaluria

Purpose – Multiple length and time scales arise in a wide variety of practical and fundamental problems. It is important to obtain accurate and validated numerical simulation results, considering the different scales that exist, in order to predict, design and optimize the behavior of practical thermal processes and systems. The purpose of this paper is to present modeling at the different length scales and then addresses the question of coupling the different models to obtain the overall model for the system or process. Design/methodology/approach – Both numerical and experimental methods to obtain results at the different length scales, particularly at micro and nanoscales, are considered. Even though the paper focusses on length scales, multiple time scales lead to similar concerns and are also considered. The two circumstances considered in detail are multiple length scales in different domains and those in the same domain. These two cases have to be modeled quite differently in order to obtain a model for the overall process or system. The basic considerations involved in such a modeling are discussed. A wide range of thermal processes are considered and the methods that may be used are presented. The models employed must be validated and the accuracy of the simulation results established if the simulation results are to be used for prediction, control and design. Findings – Of particular interest are concerns like verification and validation, imposition of appropriate boundary conditions, and modeling of complex, multimode transport phenomena in multiple scales. Additional effects such as viscous dissipation, surface tension, buoyancy and rarefaction that could arise and complicate the modeling are discussed. Uncertainties that arise in material properties and in boundary conditions are also important in design and optimization. Large variations in the geometry and coupled multiple regions are also discussed. Research limitations/implications – The paper is largely focussed on multiple-scale considerations in thermal processes. Both numerical modeling/simulation and experimentation are considered, with the latter being used for validation and physical insight. Practical implications – Several examples from materials processing, environmental flows and electronic systems, including data centers, are given to present the different techniques that may be used to achieve the desired level of accuracy and predictability. Originality/value – Present state of the art and future needs in this interesting and challenging area are discussed, providing the impetus for further work. Different methods for treating multiscale problems are presented.


2018 ◽  
Vol 481 ◽  
pp. 27-37 ◽  
Author(s):  
H.P. Menke ◽  
C.A. Reynolds ◽  
M.G. Andrew ◽  
J.P. Pereira Nunes ◽  
B. Bijeljic ◽  
...  

Author(s):  
Jeffrey L. Streator

It is well known that surface topography is composed of multiple length scales. Yet it remains a challenge to ascertain how the various length scales affect the contact area and contact stresses. Several micro-contact models exist in the literature that seek to account for the multi-scale nature of surface topography through fractal or spectral descriptions. A limitation of most such micro-contact models is that they neglect the interaction between asperity contacts. In the current work, a deterministic numerical simulation of contact is performed on the contact between a rigid flat and a rough, elastic surface whose heights vary in a single dimension (i.e., y(x)). A simulated surface profile is created and then “sampled” at several resolutions to create a set of related profiles of various levels of refinement. Contact is investigated with each of the simulated surfaces to gain insight as to the role of various length scales.


Author(s):  
M. Spector ◽  
A. C. Brown

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.


1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).


Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.


2000 ◽  
Vol 636 ◽  
Author(s):  
Qiyu Huang ◽  
Whye-Kei Lye ◽  
David M. Longo ◽  
Michael L. Reed

AbstractAlumina formed by the electrochemical anodization of bulk aluminum has a regular porous structure [1]. Sub-100 nm pores with aspect ratios as high as 1000:1 can easily be formed [2] without elaborate processing. Anodization of aluminum thus provides the basis for the inexpensive, high throughput microfabrication of structures with near vertical sidewalls [2]. In this work we explore the patterned anodic oxidation of deposited aluminum thin films, facilitating the integration of this technique with established microfabrication tools. An anodization barrier of polymethylmethacrylate (PMMA) is deposited onto 300 nm thick aluminum films. The barrier film is subsequently patterned and the exposed aluminum anodized in a 10% sulfuric acid solution. Barrier patterning techniques utilized in this study include optical exposure, ion-beam milling and nano-imprint lithography. Sharp edge definition on micron scale patterns has been achieved using optical methods. Extension of this technique to smaller dimensions by ion-beam milling and nano-imprint lithography is presented. We further report on the observation of contrast reversal of anodization with very thin PMMA barriers, which provides a novel means of pattern transfer. Potential applications and challenges will be discussed.


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