This paper presents the theory, fabrication and experimental testing results for a multiple state Non-Volatile Memory (NVM), comprised of hafnium oxide high-k dielectric tunnel and gate barriers as well as a Silicon Quantum Dot Superlattice (QDSL) implemented for the floating gate and inversion channel (QDG) and (QDC) respectively. With the conclusion of Moore’s Law for conventional transistor fabrication, regarding the minimum gate size, current efforts in memory cell research and development are focused on bridging the gap between the conventions of the past sixty years and the future of computing. One method of continuing the increasing chip density is to create multistate devices capable of storing and processing additional logic states beyond 1 and 0. Replacing the silicon nitride floating gate of a conventional Flash NVM with QDSL gives rise to minibands that result in greater control over charge levels stored in the QDG and additional intermediate states. Utilizing Hot Carrier Injection (HCI) programming, for the realized device, various magnitudes of gate voltage pulses demonstrated the ability to accurately control the charge levels stored in the QDG. This corresponds to multiple threshold voltage shifts allowing detection of multiple states during read operations.
Impact of the channel length on molybdenum disulfide field effect transistors with hafnia-based high-k dielectric gate