Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

AbstractIn this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

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Partial Reduction/Re-Oxidation Processing of Y-Ba-Cu-O Sputtered Thin Films

MRS Proceedings ◽

10.1557/proc-169-651 ◽

1989 ◽

Vol 169 ◽

Author(s):

F.H. Garzon ◽

J. G. Beery ◽

D. K. Wilde ◽

I. D. Raistrick

Keyword(s):

Thin Films ◽

Rf Sputtering ◽

Partial Reduction ◽

Rf Power ◽

X Ray Diffraction ◽

X Ray ◽

Post Annealing ◽

Residual Oxygen ◽

Ceramic Targets ◽

Substrate Temperatures

AbstractThin films of Y‐Ba‐Cu‐O were produced by RF sputtering of YBa2Cu3O7‐x ceramic targets, using a variety of plasma compositions, RF power levels, and substrate temperatures. Post annealing of these films in oxygen produced superconducting films with Tc values between 40‐60 K, broad transition widths and semiconductor‐like electrical behavior above Tc. Subsequent annealing at 850°C in an inert gas with a residual oxygen partial pressure of ≤10 ppm followed by an oxygen anneal produced high quality thin films: Tc> 85 K with narrow transition widths. The structure and morphology of these films during reduction‐oxidation processing were monitored using X‐ray diffraction and electron microscopy.

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Effect of Substrate-Target Distance on the Structure of TiCrN Films Deposited from Mosaic Target by Reactive DC Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.798.163 ◽

2019 ◽

Vol 798 ◽

pp. 163-168

Author(s):

Nirun Witit-Anun ◽

Adisorn Buranawong

Keyword(s):

Thin Films ◽

Chemical Composition ◽

Magnetron Sputtering ◽

Crystal Size ◽

Target Distance ◽

X Ray ◽

Force Microscopy ◽

Si Substrates ◽

Unbalanced Magnetron ◽

Deposited Films

Titanium chromium nitride (TiCrN) thin films were deposited on Si substrates by reactive DC unbalanced magnetron sputtering from the Ti-Cr mosaic target. The effect of substrate-to-target distances (dst) on the structure of TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and chemical composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystal size less than 65 nm. The crystal size of all plane were in the range of 36.3 – 65.7 nm. The lattice constants were in the range of 4.169 Å to 4.229 Å. The thickness and roughness decrease from 500 nm to292 nm and 3.6 nm to 2.2 nm, respectively, with increasing the substrate-to-target distance. The chemical composition, Ti, Cr and N contents, of the as-deposited films were varied with the substrate-to-target distance. The as-deposited films showed compact columnar and dense morphology as a result of increasing the substrate-to-target distance.

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Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.545.290 ◽

2012 ◽

Vol 545 ◽

pp. 290-293

Author(s):

Maryam Amirhoseiny ◽

Hassan Zainuriah ◽

Ng Shashiong ◽

Mohd Anas Ahmad

Keyword(s):

Thin Films ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

X Ray Diffraction ◽

Nitrogen Gas ◽

X Ray ◽

Force Microscopy ◽

Si Substrates ◽

Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

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Characterization of Rutile N-Doped TiO2 Films Prepared by RF Magnetron Sputtering

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.543.277 ◽

2013 ◽

Vol 543 ◽

pp. 277-280

Author(s):

Marius Dobromir ◽

Alina Vasilica Manole ◽

Simina Rebegea ◽

Radu Apetrei ◽

Maria Neagu ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Rutile Phase ◽

X Ray Diffraction ◽

X Ray ◽

Deposited Films

Rutile N-doped TiO2thin films were grown by RF magnetron sputtering on amorphous and crystalline substrates at room temperature. The surface elemental analysis, investigated by X-ray photoelectron spectroscopy indicated that the nitrogen content of the films could be adjusted up to values as high as 4.1 at.%. As demonstrated by the X-ray diffraction data, the as-deposited films (100 200 nm thick) showed no detectable crystalline structure, while after successive annealing in air for one hour at 400°C, 500°C and 600°C, the (110) rutile peaks occurred gradually as dominant features. The rutile phase in the films was confirmed by the band gap values of the deposited materials, which stabilized at 3.1 eV, for the thin films having 200 nm thicknesses.

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Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽

10.3390/surfaces4020013 ◽

2021 ◽

Vol 4 (2) ◽

pp. 106-114

Author(s):

Yannick Hermans ◽

Faraz Mehmood ◽

Kerstin Lakus-Wollny ◽

Jan P. Hofmann ◽

Thomas Mayer ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Fast Method ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Post Annealing ◽

Rf Signal ◽

First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

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Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽

10.3390/ma14123191 ◽

2021 ◽

Vol 14 (12) ◽

pp. 3191

Author(s):

Arun Kumar Mukhopadhyay ◽

Avishek Roy ◽

Gourab Bhattacharjee ◽

Sadhan Chandra Das ◽

Abhijit Majumdar ◽

...

Keyword(s):

Magnetron Sputtering ◽

Photoelectron Spectroscopy ◽

Film Surface ◽

Grazing Incidence ◽

X Ray Diffraction ◽

X Ray ◽

Relative Composition ◽

Transmission Electron ◽

Deposited Film ◽

Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

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Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽

10.1557/adv.2016.510 ◽

2016 ◽

Vol 1 (39) ◽

pp. 2711-2716 ◽

Cited By ~ 2

Author(s):

V. Vasilyev ◽

J. Cetnar ◽

B. Claflin ◽

G. Grzybowski ◽

K. Leedy ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Pyroelectric Coefficient ◽

X Ray Diffraction ◽

Ir Detectors ◽

Pyroelectric Properties ◽

X Ray ◽

Sensing Applications ◽

Pyroelectric Material ◽

Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

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Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.833.127 ◽

2015 ◽

Vol 833 ◽

pp. 127-133

Author(s):

Jie Yu ◽

Jie Xing ◽

Xiu Hua Chen ◽

Wen Hui Ma ◽

Rui Li ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Substrate Temperature ◽

Radio Frequency ◽

Film Growth ◽

Rf Magnetron Sputtering ◽

X Ray Diffraction ◽

X Ray ◽

Electrolyte Film ◽

Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

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Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.2752 ◽

2011 ◽

Vol 239-242 ◽

pp. 2752-2755

Author(s):

Fan Ye ◽

Xing Min Cai ◽

Fu Ping Dai ◽

Dong Ping Zhang ◽

Ping Fan ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Optical Band Gap ◽

Diffraction Peak ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Flow Rates ◽

X Ray ◽

Equal Distance ◽

Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

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Microstructure and Mechanical Properties of Chromium Carbide Coatings Deposited by Magnetron Sputtering Technique

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.397.118 ◽

2019 ◽

Vol 397 ◽

pp. 118-124

Author(s):

Linda Aissani ◽

Khaoula Rahmouni ◽

Laala Guelani ◽

Mourad Zaabat ◽

Akram Alhussein

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Magnetron Sputtering ◽

Structural Properties ◽

Annealing Temperature ◽

Diffusion Mechanism ◽

X Ray Diffraction ◽

Chromium Carbides ◽

X Ray ◽

Mechanical And Structural Properties

From the hard and anti-corrosions coatings, we found the chromium carbides, these components were discovered by large studies; like thin films since years ago. They were pointed a good quality for the protection of steel, because of their thermal and mechanical properties for this reason, it was used in many fields for protection. Plus: their hardness and their important function in mechanical coatings. The aim of this work joins a study of the effect of the thermal treatment on mechanical and structural properties of the Cr/steel system. Thin films were deposited by cathodic magnetron sputtering on the steel substrates of 100C6, contain 1% wt of carbon. Samples were annealing in vacuum temperature interval between 700 to 1000 °C since 45 min, it forms the chromium carbides. Then pieces are characterising by X-ray diffraction, X-ray microanalysis and scanning electron microscopy. Mechanical properties are analysing by Vickers test. The X-ray diffraction analyse point the formation of the Cr7C3, Cr23C6 carbides at 900°C; they transformed to ternary carbides in a highest temperature, but the Cr3C2 doesn’t appear. The X-ray microanalysis shows the diffusion mechanism between the chromium film and the steel sample; from the variation of: Cr, Fe, C, O elements concentration with the change of annealing temperature. The variation of annealing temperature shows a clean improvement in mechanical and structural properties, like the adhesion and the micro-hardness.

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