The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability

2021 ◽  
Author(s):  
Pavan Vudumula ◽  
Siva Kotamraju
Keyword(s):  
Schottky Diode ◽  
Drain Side ◽  
P Type

Low-loss carrier-stored IGBT with p-type Schottky diode-clamped shielding layer

2021 ◽  
Author(s):  
Bo Yi ◽  
Qing Zhao ◽  
Qian Zhang ◽  
JunJi Cheng ◽  
HaiMeng Huang ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Low Loss ◽  
P Type

Schottky diode performance of an Au/Pd/GaAs device fabricated by deposition of monodisperse palladium nanoparticles over a p-type GaAs substrate

2014 ◽  
Vol 27 ◽  
pp. 163-169 ◽  
Author(s):  
Ali Rıza Deniz ◽  
Zakir Çaldıran ◽  
Önder Metin ◽  
Hasan Can ◽  
Kadem Meral ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Palladium Nanoparticles ◽  
Gaas Substrate ◽  
P Type

Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

Computer Simulation of P-type SiC Schottky Diode using ATLAS

2000 ◽  
Vol 338-342 ◽  
pp. 1231-1234
Author(s):  
M. Tarplee ◽  
V. Madangarli ◽  
Q. Zhang ◽  
P. Palmer ◽  
Tangali S. Sudarshan
Keyword(s):  
Computer Simulation ◽  
Schottky Diode ◽  
P Type

Dissociation Kinetics of Shallow-Acceptor-Hydrogen Pairs in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
T. Zundel ◽  
J. Weber
Keyword(s):  
Schottky Diode ◽  
Reverse Bias ◽  
Temperature Dependent ◽  
Dissociation Kinetics ◽  
Shallow Acceptor ◽  
Dissociation Energies ◽  
Type Silicon ◽  
P Type ◽  
Kinetics Of

AbstractAnnealing of hydrogenated p-type silicon with a reverse bias applied to a Schottky diode allows us to precisely determine the dissociation frequency vA of shallow acceptor-hydrogen pairs (AH with A = B, Al, Ga, and In). The temperature dependent values of vA satisfy the relation vA = voAexp (-EA/kT), with voB = 2.8 . 1014 s-1, voAl = 3.1 . 1013 s-1, VoGa = 6.9 . 1013 s-1, and voIn = 8.4 · 1013 s-1. The dissociation energies EA depend only weakly on the acceptors: EB = (1.28±0.03)eV, EAl = (1.44±0.02) eV, EGa = (1.40±0.03) eV, and EIn = (1.42±0.05) eV. The dissociation frequency of BH pairs shifts to a lower value when H is replaced by the deuterium isotope.

scholarly journals Schottky diode temperature sensor for pressure sensor

2021 ◽  
Author(s):  
Mikhail Basov
Keyword(s):  
Schottky Diode ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Temperature Compensation ◽  
Operating Conditions ◽  
Temperature Range ◽  
Low Leakage ◽  
Low Leakage Current ◽  
P Type ◽  
Sensor Errors

The small silicon chip of Schottky diode (0.8x0.8x0.4 mm<sup>3</sup>) with planar arrangement of electrodes (chip PSD) as temperature sensor, which functions under the operating conditions of pressure sensor, was developed. The forward I-V characteristic of chip PSD is determined by potential barrier between Mo and n-Si (N<sub>D</sub> = 3 × 10<sup>15</sup> cm<sup>-3</sup>). Forward voltage U<sub>F</sub> = 208 ± 6 mV and temperature coefficient TC = -1.635 ± 0.015 mV/⁰C (with linearity k<sub>T</sub> <0.4% for temperature range of -65 to +85 ⁰C) at supply current I<sub>F</sub> = 1 mA is achieved. The reverse I-V characteristic has high breakdown voltage U<sub>BR</sub> > 85 V and low leakage current I<sub>L</sub> < 5 μA at 25 ⁰C and I<sub>L</sub> < 130 μA at 85 ⁰C (U<sub>R</sub> = 20 V) because chip PSD contains the structure of two p-type guard rings along the anode perimeter. The application of PSD chip for wider temperature range from -65 to +115 ⁰C is proved. The separate chip PSD of temperature sensor located at a distance of less than 1.5 mm from the pressure sensor chip. The PSD chip transmits input data for temperature compensation of pressure sensor errors by ASIC and for direct temperature measurement.

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