Properties of 4H-SiC by Sublimation Close Space Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Nishino ◽  
K. Matsumoto ◽  
Y. Chen ◽  
Y. Nishio
Keyword(s):  
Schottky Diode ◽  
Source Material ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Substrate Quality ◽  
Space Technique ◽  
P Type ◽  
Type Conduction

ABSTRACTSiC is suitable for power devices but high quality SiC epitaxial layers having a high breakdown voltage are needed and thick epilayer is indispensable. In this study, CST method (Close Space Technique) was used to rapidly grow thick epitaxial layers. Source material used was 3C-SiC polycrystalline plate of high purity while 4H-SiC(0001) crystals inclined 8° off toward <1120> was used for the substrate. Quality of the epilayer was influenced significantly by pressure during growth and polarity of the substrate. A p-type conduction was obtained by changing the size of p-type source material. The carrier concentration of epilayer decreased when a lower pressure was employed. Schottky diode was also fabricated.

Epitaxial Growth Of High Quality Sic By Sublimation Close Space Technique

1997 ◽  
Vol 483 ◽  
Author(s):  
S. Nishino ◽  
T. Yoshida ◽  
Y. Nishio
Keyword(s):  
Growth Rate ◽  
Raman Spectroscopy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Source Material ◽  
Growth Time ◽  
Power Devices ◽  
High Quality ◽  
Specular Surface ◽  
Space Technique

AbstractSemiconducting SiC is expected for power devices and higher breakdown voltage of the device is required. Growth rate of epilayer by conventional CVD is about 3 μ m/h. To make a thick epilayer, more than 10 hours are needed. To minimize the growth time, we propose sublimation epitaxial method by close space technique (CST). In the CST, source ( polycrystalline 3C–SiC plate) and substrate is closely separated by spacer and source material is sublimed and transferred to the substrate in argon. Epitaxial layers with specular surface were obtained on 6H–SiC substrates at a substrate temperature around 2200 °C and growth rate was about 100 μ/h. Nitrogen-bound exciton was observed by PL measurement at 2 K in the epilayer when 3C–SiC plate with high purity was employed as the source material. Crystallinity of the epilayer was characterized by Raman spectroscopy.

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

Breakdown Field Model for 3C-SiC Power Device Simulations

2018 ◽  
Vol 924 ◽  
pp. 617-620 ◽  
Author(s):  
Hamid Fardi ◽  
Bart van Zeghbroeck
Keyword(s):  
Field Model ◽  
Schottky Diodes ◽  
Power Device ◽  
Breakdown Field ◽  
Power Devices ◽  
High Quality ◽  
Doping Density ◽  
Number Of Publications ◽  
P Type ◽  
Ionization Rates

Modeling and simulation of 3C-SiC power devices such as MOSFETs and diodes requires a model for the breakdown field that is consistent with the Monte-Carlo-simulated ionization rates of electron and holes and supported by experimental results. The challenge one faces is the limited number of publications reporting such calculations and the limited availability of high-quality ionization breakdown data for 3C-SiC diodes. We therefore performed a series of 2D simulations of both n-type and p-type Schottky diodes and p+-n diodes that confirms the general breakdown field trend with doping density obtained from experiments. We uncovered a difference between n-type and p-type diode breakdown behavior, identified the discrepancy between the calculations and the experimental data, and extracted a simple breakdown field model, useful for further 3C-SiC device design and simulation.

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for Power Elec-tronics Technology. Review

2020 ◽  
Vol 25 (6) ◽  
pp. 483-396
Author(s):  
A.V. Afanasev ◽  
◽  
V.A. Ilyin ◽  
V.V. Luchinin ◽  
S.A. Reshanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Main Method ◽  
Technological Factors ◽  
Current State ◽  
Individual Task ◽  
Technology Review

Currently, chemical gas deposition is the main method for producing high-quality and reproducible epitaxial layers for commercial silicon carbide (SiC) power devices. Based on the experience of ETU «LETI» in the synthesis of monocrystalline SiC, an analysis of the current state of silicon carbide gas phase epitaxy (CVD) technology was carried out. It has been shown that modern CVD reactors allow to implement the growth processes of SiC epitaxial structures of high quality with the following parameters: substrates diameter up to 200 mm; thicknesses of epitaxial layers from 0.1 to 250 μm; layers of n - and p -types conductivity with ranges of doping levels 10-10 cm and 10-10 cm, respectively. At the same time, setting up the technology of the reproducible high-quality growth of epitaxial layers is an individual task for a specific type of reactor. It requires a detailed consideration of the technological factors presented in this paper, which at the end determine the achievable parameters of SiC-epitaxial products

scholarly journals The source material of soft spring wheat for improving the quality of grain and resistance to lodging

2021 ◽  
Vol 36 ◽  
pp. 01023
Author(s):  
V.V. Novokhatan ◽  
E.V. Zuev ◽  
T.V. Shelomentseva ◽  
T.A. Leonova
Keyword(s):  
Source Material ◽  
Intensive Agriculture ◽  
High Quality ◽  
Wheat Varieties ◽  
Important Indicator ◽  
Fine Grain ◽  
Arid Conditions ◽  
Local Selection ◽  
High Yielding Varieties

The Northern Trans-Urals is a region of intensive agriculture that needs high-yielding varieties that are resistant to lodging and a-biotic environmental factors, forming high-quality grain. In this respect, as a starting material for breeding, Canadian varieties with good technological indicators of grain and Norwegian varieties with high resistance to lodging and well-expressed economic and valuable characteristics are of interest. An important indicator when creating wheat varieties is the resistance to pre-harvest germination of grain on the root. The conjugacy of this feature with the yield is high and is expressed negatively - r = -0.922. Among the studied cultivars, Demonstrant (Norway) and 5603HR (Canada) stand out for their resistance to grain germination in the ear. Norwegian varieties are characterized by multi-grain ear, fine grain and compacted ear. Marker traits of drought resistance – the length of the upper internode and the removal of the ear, are better expressed in the standard of Omskaya 36, varieties of local selection and varietals - Laban and GN 06600 (Norway). In arid conditions, these varieties have a more pronounced yield. The best in this respect is Kazakhstan one - Astana (2.27 t/ha). The intensity was highlighted by the variety - GN 06600 (Norway) - 5.05 t/ha. The revealed conjugate relationships in the studied traits allow to purposefully conduct breeding work.

Improve potato seeds in potato seed farming: practical account

2019 ◽  
pp. 10-17
Author(s):  
Natalia Gaitova ◽  
Boris Anisimox ◽  
Sergey Zhevora ◽  
Valentina Boyko ◽  
Natalia Gaitova ◽  
...  
Keyword(s):  
Viral Infection ◽  
Source Material ◽  
Potato Seed ◽  
High Quality ◽  
Distinctive Features ◽  
Main Variety ◽  
New Perspective ◽  
Basic Seed

The technological process of growing potato seed material begins with the acquisition of the source material and its accelerated reproduction to the required volumes. To include new perspective varieties and hybrids in seed programs, they must be released from a viral infection. Exemption from viruses is a responsible, time-consuming and costly process that requires professionalism, but in the absence of this stage, promising varieties cannot participate in the implementation of seed programs. Only in vitro, a material thoroughly assessed with regard to the presence of pathogens, the varietal typicality and severity of the main variety distinctive features can ensure the high quality of seed potatoes in basic seed production.

Observation of n- and p-Type Conduction of Site-selectively Zn-doped Epitaxial Layers of CuGaS2

2000 ◽  
Vol 39 (S1) ◽  
pp. 208 ◽  
Author(s):  
Hiromichi Kumakura ◽  
Seishi Iida ◽  
Yuichiro Nakagaki ◽  
Hisao Uchiki ◽  
Tamao Matsumoto-Aoki ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
P Type ◽  
Type Conduction

4H-SiC Epitaxial Growth on C-Face 150 mm SiC Substrate

2014 ◽  
Vol 778-780 ◽  
pp. 193-196 ◽  
Author(s):  
Akira Miyasaka ◽  
Jun Norimatsu ◽  
Keisuke Fukada ◽  
Yutaka Tajima ◽  
Yoshiaki Kageshima ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Production Technology ◽  
Smooth Surface ◽  
Growth Parameters ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
High Uniformity

The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrates. Several growth parameters and hardware were optimized to obtain high uniformity wafers. We have succeeded in fabricating high quality C-face wafers with smooth surface and high uniformity.

Epitaxial Layers Si: (Sn,Yb) Produced by the Crystallization From the Melt-Solution on the Basis of Sn.

1993 ◽  
Vol 298 ◽  
Author(s):  
D.I. Brinkevich ◽  
N.M. Kazuchits ◽  
V.V. Petrov
Keyword(s):  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Layers ◽  
High Quality ◽  
Low Concentration ◽  
Crystallization From The Melt

AbstractEpitaxial layers (EL) Si:Sn doped with Yb in the process of liquid phase epitaxy were studied by optical microscopy and photoluminescence (PL) methods.At low concentration of lanthanoid (0,01 < Nyb > 0,1 weight %) the good planarity of the interface and high quality of the surface are detected. At NYb > 0,1 weight % microirregularities are presented.In EL Si:(Sn, Yb) irradiated by 4,5 MeV-electrons the suppression of the generation of radiaton defects, responsible for G– and C-lines of PL, has been found. This effect has been explainedwithin the score of the model takeng into the consideration gettering propering ofYb in reference to the impurities of 0 and C as deformation fields, attributed to the presence of Sn atoms.

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