Interfacially engineered liquid-phase-sintered Cu–In composite solders for thermal interface material applications

2014 ◽  
Vol 49 (22) ◽  
pp. 7844-7854 ◽  
Author(s):  
J. Liu ◽  
U. Sahaym ◽  
I. Dutta ◽  
R. Raj ◽  
M. Renavikar ◽  
...  
2009 ◽  
Vol 38 (12) ◽  
pp. 2735-2745 ◽  
Author(s):  
I. Dutta ◽  
R. Raj ◽  
P. Kumar ◽  
T. Chen ◽  
C. M. Nagaraj ◽  
...  

2011 ◽  
Vol 46 (21) ◽  
pp. 7012-7025 ◽  
Author(s):  
J. Liu ◽  
P. Kumar ◽  
I. Dutta ◽  
R. Raj ◽  
R. Sidhu ◽  
...  

Author(s):  
J. Liu ◽  
P. Kumar ◽  
I. Dutta ◽  
R. Raj ◽  
M. Renavikar

This paper reports on a new paradigm for highly flexible solder design, proffering high electrical and thermal conductivity, in conjunction with good mechanical compliance, via a novel Liquid Phase Sintering (LPS) approach. The new LPS solders comprise a high melting point phase HMP (e.g., Cu or Sn) with a small amount of a low melting-point phase LMP (e.g., In) at grain boundaries, such that different properties can be controlled by different constituents. In general, conductivity is dominated by the majority HMP constituent, while deformation is controlled by the minority, LMP grain boundary constituent. The LPS solders are suitable for both thermal interface material (TIM) and interconnect applications. As the application space for solders shifts in the future, and requirements for new property-sets emerge, the flexibility of the LPS solder approach will allow integration of different materials into new LPS solder-systems.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1699
Author(s):  
Sriharsha Sudhindra ◽  
Fariborz Kargar ◽  
Alexander A. Balandin

We report on experimental investigation of thermal contact resistance, RC, of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness, Sq. It is found that the thermal contact resistance depends on the graphene loading, ξ, non-monotonically, achieving its minimum at the loading fraction of ξ ~15 wt %. Decreasing the surface roughness by Sq~1 μm results in approximately the factor of ×2 decrease in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, KTIM, thermal contact resistance, RC, and the total thermal resistance of the thermal interface material layer on ξ and Sq can be utilized for optimization of the loading fraction of graphene for specific materials and roughness of the connecting surfaces. Our results are important for the thermal management of high-power-density electronics implemented with diamond and other wide-band-gap semiconductors.


2021 ◽  
pp. 002199832110595
Author(s):  
Weontae Oh ◽  
Jong-Seong Bae ◽  
Hyoung-Seok Moon

The microstructural change of graphite was studied after ultrasonic treatment of the graphite. When the graphite solution was treated with varying ultrasonic power and time, the microstructure changed gradually, and accordingly, the thermal conductivity characteristics of the composite containing the as-treated graphite was also different with each other. Thermal conductivity showed the best result in the silicone composite containing graphite prepared under the optimum condition of ultrasonic treatment, and the thermal conductivity of the composite improved proportionally along with the particle size of graphite. When the silicone composite was prepared by using a mixture of inorganic oxides and graphite rather than graphite alone, the thermal conductivity of the silicone composite was further increased. A silicone composite containing graphite was used for LED (light emitting diode) lighting system as a thermal interface material (TIM), and the temperature elevation due to heat generated, while the lighting was actually operated, was analyzed.


Author(s):  
Amer M. Hamdan ◽  
Aric R. McLanahan ◽  
Robert F. Richards ◽  
Cecilia D. Richards

This work presents the characterization of a thermal interface material consisting of an array of mercury micro droplets deposited on a silicon die. Three arrays were tested, a 40 × 40 array (1600 grid) and two 20 × 20 arrays (400 grid). All arrays were assembled on a 4 × 4 mm2 silicon die. An experimental facility which measures the thermal resistance across the mercury array under steady state conditions is described. The thermal interface resistance of the arrays was characterized as a function of the applied load. A thermal interface resistance as low as 0.253 mm2 K W−1 was measured. A model to predict the thermal resistance of a liquid-metal micro droplet array was developed and compared to the experimental results. The model predicts the deformation of the droplet array under an applied load and then the geometry of the deformed droplets is used to predict the thermal resistance of the array. The contact resistance of the mercury arrays was estimated based on the experimental and model data. An average contact resistance was estimated to be 0.14 mm2 K W−1.


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