Determination of material properties of thin films and coatings using indentation tests: a review

2017 ◽  
Vol 52 (21) ◽  
pp. 12553-12573 ◽  
Author(s):  
Wu Wen ◽  
Adib A. Becker ◽  
Wei Sun
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
Indentation Tests

Determination of the Elastic and Plastic Properties of Transversely Isotropic Thin Films on Substrates by Sharp Indentation

MRS Advances ◽  
2018 ◽  
Vol 3 (8-9) ◽  
pp. 445-450
Author(s):  
Zheng Zhi ◽  
T. A. Venkatesh
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
Transversely Isotropic ◽  
Indentation Method ◽  
Plastic Properties ◽  
Response Characteristics ◽  
Functional Relationships ◽  
Thin Film System ◽  
Indentation Response

ABSTRACTA combination of dimensional analysis and finite element modeling was invoked to characterize the indentation behavior of transversely isotropic thin films on substrate materials. Through indentation simulations of over 13,500 combinations of properties for the thin film system, functional relationships that connect the indentation responses of the thin films with the elastic and plastic properties of the thin films were obtained. The forward algorithms that predict the indentation response characteristics from known material properties and the reverse algorithms that predict the material properties from known indentation responses were verified to be very accurate. Thus, the viability of using the indentation method to determine the elastic and plastic properties of transversely isotropic thin films on substrate materials was demonstrated.

scholarly journals On the determination of the Young’s modulus of thin films using indentation tests

2007 ◽  
Vol 44 (25-26) ◽  
pp. 8313-8334 ◽  
Author(s):  
J.M. Antunes ◽  
J.V. Fernandes ◽  
N.A. Sakharova ◽  
M.C. Oliveira ◽  
L.F. Menezes
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Indentation Tests

On-Chip Structures for the Determination of the Dopant-Dependent Young’s Modulus of Heavily Phosphorus Doped Polysilicon With Stress Compensation

2010 ◽  
Author(s):  
E. Bassiachvili ◽  
J. R. Godin ◽  
P. Nieva ◽  
A. Khajepour
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Material Properties ◽  
Young's Modulus ◽  
Direct Access ◽  
Film Material ◽  
Heavily Doped ◽  
Stress Compensation ◽  
On Chip

Accurate knowledge of thin-film material properties, such as Young’s modulus, is imperative in proper design and operation of MEMS devices. The use of on-chip devices allows direct access to the material properties as they are known to change with fabrication process, temperature as well as location within the wafer. Resonant and pull-in structures have been designed and modeled for the measurement of the Young’s modulus of heavily doped polysilicon thin films. The cantilever and clamped-clamped beams allow us to extract the Young’s modulus through observing the resonant frequency and pull-in voltage and cross-referencing the results. Mechanical actuation using a calibrated piezoelectric shaker for some devices and electrostatic actuation for others ensures that the structural effects, rather than the actuation technique, are responsible for the varying response at different temperatures. Optical readout will be used in order to reduce readout-associated errors, which can occur with purely electrical techniques at higher temperatures. However, electrical readout is also possible for some of the devices. The devices have been designed and fabricated using a customized 1-mask process. In this paper, we present the modeling and numerical simulations obtained for heavily doped polysilicon microstructures and will describe the method used for the determination of the Young’s modulus with stress compensation. Although the method described here has been used for heavily doped polysilicon thin films, it can be easily modified for the determination of Young’s modulus of other MEMS structural materials.

Determination of the mechanical properties of metallic thin films and substrates from indentation tests

2002 ◽  
Vol 82 (10) ◽  
pp. 2013-2029 ◽  
Author(s):  
K. Tunvisut ◽  
E. P. Busso ◽  
N. P. O'dowd ◽  
H. P. Brantner
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Metallic Thin Films ◽  
Indentation Tests

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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