Zinc oxide nanorods-based immuno-field-effect transistor for human serum albumin detection

Author(s):  
Siti Shafura A. Karim ◽  
Sh. Nadzirah ◽  
Jamal Kazmi ◽  
Ruslinda A. Rahim ◽  
Chang Fu Dee ◽  
...  
2017 ◽  
Vol 46 (6) ◽  
pp. 3732-3737 ◽  
Author(s):  
Pham Van Thanh ◽  
Le Thi Quynh Nhu ◽  
Hong Hanh Mai ◽  
Nguyen Viet Tuyen ◽  
Sai Cong Doanh ◽  
...  

Nano Letters ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 1293-1298 ◽  
Author(s):  
Pyo Jin Jeon ◽  
Young Tack Lee ◽  
June Yeong Lim ◽  
Jin Sung Kim ◽  
Do Kyung Hwang ◽  
...  

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.


Sensors ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 2642 ◽  
Author(s):  
Reena Sri Selvarajan ◽  
Ruslinda A. Rahim ◽  
Burhanuddin Yeop Majlis ◽  
Subash C. B. Gopinath ◽  
Azrul Azlan Hamzah

Nephrogenic diabetes insipidus (NDI), which can be congenital or acquired, results from the failure of the kidney to respond to the anti-diuretic hormone (ADH). This will lead to excessive water loss from the body in the form of urine. The kidney, therefore, has a crucial role in maintaining water balance and it is vital to restore this function in an artificial kidney. Herein, an ultrasensitive and highly selective aptameric graphene-based field-effect transistor (GFET) sensor for ADH detection was developed by directly immobilizing ADH-specific aptamer on a surface-modified suspended graphene channel. This direct immobilization of aptamer on the graphene surface is an attempt to mimic the functionality of collecting tube V 2 receptors in the ADH biosensor. This aptamer was then used as a probe to capture ADH peptide at the sensing area which leads to changes in the concentration of charge carriers in the graphene channel. The biosensor shows a significant increment in the relative change of current ratio from 5.76 to 22.60 with the increase of ADH concentration ranging from 10 ag/mL to 1 pg/mL. The ADH biosensor thus exhibits a sensitivity of 50.00 µA· ( g / mL ) − 1 with a limit of detection as low as 3.55 ag/mL. In specificity analysis, the ADH biosensor demonstrated a higher current value which is 338.64 µA for ADH-spiked in phosphate-buffered saline (PBS) and 557.89 µA for ADH-spiked in human serum in comparison with other biomolecules tested. This experimental evidence shows that the ADH biosensor is ultrasensitive and highly selective towards ADH in PBS buffer and ADH-spiked in human serum.


Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20377-20383 ◽  
Author(s):  
Youngjun Kim ◽  
Byoungnam Park

We fabricated a zinc oxide (ZnO)/methylammonium lead iodide (MAPbI3) perovskite/ZnO field effect transistor (FET) test platform device through which ZnO/perovskite interfacial contact properties can be probed in the dark and under illumination.


Materials ◽  
2014 ◽  
Vol 7 (4) ◽  
pp. 2490-2500 ◽  
Author(s):  
Shanshan Cheng ◽  
Kaori Hotani ◽  
Sho Hideshima ◽  
Shigeki Kuroiwa ◽  
Takuya Nakanishi ◽  
...  

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