scholarly journals Tuning the electrical resistivity of conductive silver paste prepared by blending multi-morphologies and micro-nanometers silver powder

2021 ◽  
Author(s):  
Xiao Liu ◽  
Siyuan Wu ◽  
Baishan Chen ◽  
Yunzhu Ma ◽  
Yufeng Huang ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Silver Powder ◽  
Silver Paste

scholarly journals Tuning the Electrical Resistivity of Conductive Silver Paste Prepared by Blending Multi-Morphologies and Micro-Nanometers Silver Powder

2021 ◽  
Author(s):  
Liu Xiao ◽  
Wu Siyuan ◽  
Chen Baishan ◽  
Ma Yunzhu ◽  
Huang Yufeng ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Electrical Resistivity ◽  
Printed Circuit Board ◽  
Silver Powder ◽  
Circuit Board ◽  
Silver Paste ◽  
Printed Circuit ◽  
Folding Endurance ◽  
Lower Temperature ◽  
Interconnection Material

Abstract As an important interconnection material in electronics, conductive silver paste has attract much research interest in chip packaging and printed circuit board due to its predominant properties like high conductivity and flexible interconnection. In this paper, the silver nanoparticles, the silver sphere particles and flake silver powder are fabricated by various methods. Different proportions of silver powder are selected to prepare micro-silver paste and mn silver paste (fabricated by silver nanoparticles : sphere particles : flake silver powder=1:1:1). Compared to traditional silver paste (containing 80wt% silver), the electrical resistivity of micro-silver paste containing 66.67wt% silver and cured at 200℃ for 45min in air is about (3.31±0.73)×10-5Ω·cm when the ratio of sphere particle to flake silver powder is 1:1, the resistance of silver paste doesn’t also increase dramatically after bending ten times. The addition of nano-silver particles can reduce the resistivity in lower temperature curing. The folding endurance of mn silver paste is comparable to that of micro-silver paste with sphere : flake=1:1.

The influence of dispersants that contain polyethylene oxide groups on the electrical resistivity of silver paste

2014 ◽  
Vol 131 (24) ◽  
pp. n/a-n/a
Author(s):  
Tzu Hsuan Chiang ◽  
Yi-Fu Chen ◽  
Ya Chun Lin ◽  
Emi Yun Chen
Keyword(s):  
Electrical Resistivity ◽  
Polyethylene Oxide ◽  
Silver Paste

Electrical Properties of Silver Paste Prepared from Nanoparticles and Lead-Free Frit

2007 ◽  
Vol 7 (11) ◽  
pp. 3917-3919 ◽  
Author(s):  
Sung Hyun Park ◽  
Dong Seok Seo ◽  
Jong Kook Lee
Keyword(s):  
Silver Nanoparticles ◽  
Electrical Properties ◽  
Screen Printing ◽  
Chemical Reduction ◽  
Silver Powder ◽  
Average Particle Size ◽  
Average Particle ◽  
Chemical Reduction Method ◽  
Silver Paste ◽  
Thermal And Electrical Properties

Recently, PbO containing glass systems in commercial silver paste have been used due to their low glass transition temperature, good thermal and electrical properties. However, PbO is a hazardous material to both health and the environment. In this study, Pb-free silver paste was prepared by mixing commercial silver powder and silver nanoparticles. The commercial powder has an average particle size of 1.6 μm. The silver nanoparticles with particles size of 20–50 nm were synthesized by a chemical reduction method using surfactant. Pb-free frit was added into the mixed silver powder as the amounts of 3, 6 and 9 wt%. Using the obtained paste, thick films were fabricated by a screen printing on alumina substrate and the films were fired at temperature from 400 to 550 °C. The films had thickness of 6–11 μm and sheet resistivity of about 4–11 μΩ cm.

Lead Free Die Mount Adhesive Using Silver Nanoparticles Applied To Power Discrete Package

2005 ◽  
Vol 2 (3) ◽  
pp. 217-222
Author(s):  
Yasunari Ukita ◽  
Kazuki Tateyama ◽  
Masao Segawa ◽  
Yoshihiko Tojo ◽  
Hideyuki Gotoh ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silver Nanoparticles ◽  
Electrical Resistivity ◽  
High Power ◽  
Lead Free ◽  
Silver Particles ◽  
Power Transistor ◽  
Silver Paste ◽  
High Electrical Resistivity ◽  
Very High

Lead-free materials are required to replace conventional lead-containing solder for environmental protection. The Pb-rich solder die mount material in a high-power transistor package is required to be replaced by a silver adhesive paste. The silver paste has disadvantages such as low thermal conductivity and high electrical resistivity, since conduction paths are achieved only by mechanical contacts between silver particles. Recently, a new conductive paste containing silver particles and silver nanoparticles with a particle size of 3–7 nm in diameter was developed. The paste shows very low electrical resistivity of 6×10−6 ohm.cm, since the silver nanoparticles can be fused at temperatures below 200°C. We have been studying the possibility of the paste as a die mount material for high-power transistor packages. It was confirmed that the paste had a very high thermal conductivity of 51 W/mK. We fabricated a high-power transistor package using this paste. As a result, the package showed lower thermal resistance than that fabricated using silver paste or lead-containing solder. Moreover, the package is sufficiently reliable that it passed the thermal cycle and pressure cooker tests. This paste can be applied to a high-power transistor package in place of lead-containing solder.

Fabrication of Pb-Free Silver Paste and Thick Film Adding Silver Nanoparticles

2007 ◽  
Vol 124-126 ◽  
pp. 639-642 ◽  
Author(s):  
Sung Hyun Park ◽  
Dong Seok Seo ◽  
Jong Kook Lee
Keyword(s):  
Silver Nanoparticles ◽  
Screen Printing ◽  
Chemical Reduction ◽  
Silver Powder ◽  
Thick Films ◽  
Electronic Devices ◽  
Average Particle Size ◽  
Average Particle ◽  
Silver Paste ◽  
The Relationship

Fabrication of paste at low temperature has been developed in order to apply for various electronic devices, such as bus electrode and address electrode in PDP, especially for enlargement of a screen size. In this study, nano-sized silver particles with 10 - 30 nm were synthesized from silver nitrate (AgNO3) by a chemical reduction method. To prepare Pb-free silver paste, the silver nanoparticles were mixed with conventional silver powder with an average particle size of 1.6 and conventional Pb-free frit. Thick films were fabricated from silver paste by a screen printing on alumina substrate and the films were fried at temperatures ranging from 550 °C to 600 °C. Microstructures of the fried thick films were analyzed by FE-SEM. Sheet resistivity of fried thick films was measured and also the relationship between sinterability and conductivity of these films were investigated.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

The stabilization of B.C.C. Cu in Cu/Nb nanolayered composites

1996 ◽  
Vol 54 ◽  
pp. 228-229
Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Layer Thickness ◽  
Volume Fraction ◽  
Ion Beam ◽  
High Strength ◽  
Cross Sectional ◽  
Metastable Structure ◽  
High Resolution Tem ◽  
Potential Improvement ◽  
Two Phases

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.

Chemical structure of diamond-like carbon thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 710-711
Author(s):  
N.-H. Cho ◽  
K.M. Krishnan ◽  
D.B. Bogy
Keyword(s):  
Electrical Resistivity ◽  
Chemical Structure ◽  
Diamond Like Carbon ◽  
Chemical Structures ◽  
Sputtering Power ◽  
Data Aquisition ◽  
Equilibrium Phases ◽  
Electron Energy Loss ◽  
Power Densities ◽  
Preparation Techniques

Diamond-like carbon (DLC) films have attracted much attention due to their useful properties and applications. These properties are quite variable depending on film preparation techniques and conditions, DLC is a metastable state formed from highly non-equilibrium phases during the condensation of ionized particles. The nature of the films is therefore strongly dependent on their particular chemical structures. In this study, electron energy loss spectroscopy (EELS) was used to investigate how the chemical bonding configurations of DLC films vary as a function of sputtering power densities. The electrical resistivity of the films was determined, and related to their chemical structure.DLC films with a thickness of about 300Å were prepared at 0.1, 1.1, 2.1, and 10.0 watts/cm2, respectively, on NaCl substrates by d.c. magnetron sputtering. EEL spectra were obtained from diamond, graphite, and the films using a JEOL 200 CX electron microscope operating at 200 kV. A Gatan parallel EEL spectrometer and a Kevex data aquisition system were used to analyze the energy distribution of transmitted electrons. The electrical resistivity of the films was measured by the four point probe method.

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