Influence of Low Cd-Doping Concentration (0.5 and 3 wt.%) and Different Substrate Types (Glass and Silicon) on the Properties of Dip-Coated Nanostructured ZnO Semiconductors Thin Films

2021 ◽  
Author(s):  
Badis Rahal ◽  
Boubekeur Boudine ◽  
Youssef Larbah ◽  
Menouar Siad ◽  
Nassim Souami
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Cd Doping ◽  
Substrate Types

scholarly journals Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

2013 ◽  
Vol 15 ◽  
pp. 137-150 ◽  
Author(s):  
J.A. Najim ◽  
J.M. Rozaiq
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Visible Region ◽  
Annealing Treatment ◽  
Zno Thin Films ◽  
Chemical Spray Pyrolysis ◽  
Cd Doping ◽  
Crystallite Sizes ◽  
Diffraction Patterns ◽  
Polycrystalline Structures

ZnO thin films with Cd/Zn nominal ratios of 0%, 1%, 3%, 5%, and 7% and thickness of 0.7 μm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

Effect of Zn doping concentration on optical band gap of PbS thin films

2019 ◽  
Vol 792 ◽  
pp. 1000-1007 ◽  
Author(s):  
Mengting Liu ◽  
Qiuqiang Zhan ◽  
Wei Li ◽  
Rui Li ◽  
Qinyu He ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Doping Concentration ◽  
Optical Band Gap ◽  
Zn Doping

Tuning magnetic properties of BiFeO3 thin films by controlling Mn doping concentration

2018 ◽  
Vol 44 (6) ◽  
pp. 6054-6061 ◽  
Author(s):  
Yilin Zhang ◽  
Ji Qi ◽  
Yuhan Wang ◽  
Yu Tian ◽  
Junkai Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Doping Concentration ◽  
Mn Doping ◽  
Bifeo3 Thin Films

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

INVESTIGATION OF THIRD-ORDER NONLINEAR OPTICAL PROPERTIES OF BFDT-DOPED PMMA THIN FILMS USING Z-SCAN TECHNIQUE

2009 ◽  
Vol 23 (28) ◽  
pp. 3361-3368
Author(s):  
HELIANG FAN ◽  
XINQIANG WANG ◽  
QUAN REN ◽  
TINGBIN LI ◽  
JING SUN ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Switching ◽  
Nonlinear Optical ◽  
Doping Concentration ◽  
Quartz Substrate ◽  
Nonlinear Coefficient ◽  
Nonlinear Optical Properties ◽  
Potential Candidate ◽  
Third Order

A series of polymeric thin films with BFDT (BFDT = 4,5-bis(foroylsulfanyl)-1,3-dithiole-2-thione) doped in PMMA (polymethylmethacrylate) were fabricated by means of spin-coating on quartz substrate. The third-order nonlinear optical properties of the films were investigated by Z-scan technique at 532 nm wavelength with 20 ps pulse width. The influences of doping concentration for third-order nonlinearity were also studied. A self-defocusing effect was observed from the Z-scan curves and the nonlinear refractive index of the film increases with the increase in doping concentration. Our results suggest that considerable nonlinear optical properties were found in BFDT. In addition, it was found that the nonlinear coefficient of the BFDT-doped PMMA thin film was about two orders of magnitude larger than that of homologous materials with organic solvents. By analysis, we can conclude that the material is a potential candidate for applications of nonlinear optics and can be considered in the fabrication of all-optical switching devices, etc.

Highly Doped P-Type, N-Type CdS Thin Films and Diodes

1993 ◽  
Vol 329 ◽  
Author(s):  
Wen P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Annealing Process ◽  
Laser Deposition ◽  
Post Annealing ◽  
Gaas Substrates ◽  
Cds Thin Film ◽  
Good Crystalline Quality ◽  
Cds Thin Films ◽  
P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Effect of aluminium doping concentration on microstructures, optical and electrical properties of ZnO thin films by spray pyrolysis technique

2018 ◽  
Vol 5 (3) ◽  
pp. 9519-9524 ◽  
Author(s):  
Worapot Sripianem ◽  
Alichapat Chuchuay ◽  
Pitcha Kiatthanabumrung ◽  
Natthida Saengow ◽  
Thanate Na Wichean ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Spray Pyrolysis Technique ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Aluminium Doping

Doping and Annealing Effects on the Optical Bandgap of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 243-248
Author(s):  
Fatmah S. Bahabri ◽  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Doping Concentration ◽  
Cupric Oxide ◽  
Optical Bandgap ◽  
Visible Range ◽  
Bandgap Energy ◽  
Direct Bandgap ◽  
Annealing Temperatures ◽  
Annealing Effects

In this work, we study the optical properties of the Nickel doped cupric oxide Ni-CuO thin films with Ni various doping concentrations (0, 20, 30, 50, 70, and 80%), at two different annealing temperatures; 200 and 400 °C. The absorbance and optical bandgap for the films are calculated and compared. We find that all films exhibit clear peaks in the visible range, with the increase in the absorptivity via increasing both annealing and Ni concentration. We also find that the annealing affects the shape of the absorbance peaks to be narrowed and blue shifted. Investigation on the direct bandgap energy shows that all films exhibit large direct gap; ranging from 3.87 to 4.01 eV. For non-annealed films, direct bandgap increases with increasing the Ni concentration, while for the annealed samples, the direct bandgap generally decreases by annealing, and with increasing the doping concentration. For the indirect bandgap analysis, the calculated values of the bandgap are ranging from 0.62 to 1.96 eV. We find that for non-annealed films, the indirect bandgap increases with increasing the doping concentration, while after annealing, the bandgap decreases with increasing the doping concentration for the annealing at 200 and 400 °C, with more decreasing in the gap at 400 °C.

Sign in / Sign up

Export Citation Format

Share Document