Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit

2016 ◽  
Vol 184 (1-2) ◽  
pp. 217-224 ◽  
Author(s):  
T. Wada ◽  
Y. Arai ◽  
S. Baba ◽  
M. Hanaoka ◽  
Y. Hattori ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Infrared Image ◽  
Far Infrared ◽  
Impurity Band ◽  
Image Sensors ◽  
Silicon On Insulator ◽  
Readout Integrated Circuit ◽  
Fully Depleted ◽  
Infrared Image Sensors

scholarly journals Update of Single Event Effects Radiation Hardness Assurance of Readout Integrated Circuit of Infrared Image Sensors at Cryogenic Temperature

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2338 ◽  
Author(s):  
Laurent Artola ◽  
Ahmad Youssef ◽  
Samuel Ducret ◽  
Franck Perrier ◽  
Raphael Buiron ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Cryogenic Temperature ◽  
Infrared Image ◽  
Image Sensors ◽  
Radiation Hardness ◽  
Single Event ◽  
Readout Integrated Circuit ◽  
Flip Flop ◽  
Single Event Effects ◽  
Infrared Image Sensors

This paper review presents Single Event Effects (SEE) irradiation tests under heavy ions of the test-chip of D-Flip-Flop (DFF) cells and complete readout integrated circuits (ROIC) as a function of temperature, down to 50 K. The analyses of the experimental data are completed using the SEE prediction tool MUSCA SEP3. The conclusions derived from the experimental measurements and related analyses allow to update the current SEE radiation hardness assurance (RHA) for readout integrated circuits of infrared image sensors used at cryogenic temperatures. The current RHA update is performed on SEE irradiation tests at room temperature, as opposed to the operational cryogenic temperature. These tests include SET (Single Event Transient), SEU (Single Event Upset) and SEFI (Single Event Functional Interrupt) irradiation tests. This update allows for reducing the cost of ROIC qualifications and the test setup complexity for each space mission.

High-performance graphene/InSb heterojunction photodetectors for high-resolution mid-infrared image sensors

2020 ◽  
Vol 117 (17) ◽  
pp. 173102
Author(s):  
Masaaki Shimatani ◽  
Shoichiro Fukushima ◽  
Satoshi Okuda ◽  
Shinpei Ogawa
Keyword(s):  
High Resolution ◽  
High Performance ◽  
Infrared Image ◽  
Image Sensors ◽  
Mid Infrared ◽  
Infrared Image Sensors

Flexible Short-Wave Infrared Image Sensors Enabled by High-Performance Polymeric Photodetectors

2020 ◽  
Vol 53 (23) ◽  
pp. 10636-10643
Author(s):  
Lei Lv ◽  
Wei Dang ◽  
Xiaoxi Wu ◽  
Hao Chen ◽  
Tao Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Infrared Image ◽  
Short Wave ◽  
Image Sensors ◽  
Short Wave Infrared ◽  
Infrared Image Sensors

Bolometric properties of reactively sputtered TiO2−xfilms for thermal infrared image sensors

2015 ◽  
Vol 48 (35) ◽  
pp. 355104 ◽  
Author(s):  
Y Ashok Kumar Reddy ◽  
In-Ku Kang ◽  
Young Bong Shin ◽  
Hee Chul Lee
Keyword(s):  
Infrared Image ◽  
Thermal Infrared ◽  
Image Sensors ◽  
Infrared Image Sensors

Photo-Related Stress Effects in a-SiGe:H Thin Film Transistors for Infrared Image Sensors

2013 ◽  
Vol 9 (1) ◽  
pp. 30-36 ◽  
Author(s):  
Sang Youn Han ◽  
Kyung Sook Jeon ◽  
Junho Song ◽  
Ho Sik Jeon ◽  
Byung Seong Bae
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Infrared Image ◽  
Image Sensors ◽  
Stress Effects ◽  
Related Stress ◽  
Infrared Image Sensors
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