Fine roots of Prosopis flexuosa trees in the field. Plant and soil variables that control their growth and depth distribution

Plant Ecology ◽  
2018 ◽  
Vol 219 (12) ◽  
pp. 1399-1412 ◽  
Author(s):  
Aranzazú Guevara ◽  
Verónica Pancotto ◽  
Leandro Mastrantonio ◽  
Carla Valeria Giordano
Keyword(s):  
Fine Roots ◽  
Depth Distribution ◽  
Soil Variables ◽  
Field Plant ◽  
Prosopis Flexuosa

scholarly journals DISTRIBUTION OF ROOT SYSTEM AT APPLE CV. GRANNY SMITH GRAFTED ON DIFFERENT DWARFING ROOTSTOCKS

2018 ◽  
Vol 39 (1) ◽  
pp. 69
Author(s):  
Viktor Gjamovski ◽  
Marjan Kiprijanovski ◽  
Tosho Arsov
Keyword(s):  
Root System ◽  
Fine Roots ◽  
Depth Distribution ◽  
Root Systems ◽  
Growing Season ◽  
Apple Cultivar ◽  
Apple Rootstocks ◽  
Coarse Roots ◽  
Total Length ◽  
Planting Distance

This paper analyses the distribution of root systems of nine dwarf apple rootstocks (M.9 T 984, M.9 T 337, Jork 9, Mark 9, Budagowski 9, M.9 EMLA, Pajam 1, Pajam 2 and Supporter 4). All rootstocks were grafted with apple cultivar Granny Smith. The study was performed in the experimental orchard established in the Prespa region (Resen, R. Macedonia). The experimental orchard was established in 2004, with a planting distance 3.5 m x 1.5 m. At the end of the 7th growing season following characteristics were evaluated: length and weight of the fine (fibrous) and coarse roots, and depth distribution of the root system. Among the evaluated rootstocks statistically significant differ-ences in total length of the fine roots were not found. Between different rootstocks the results for total length of coarse roots showed more variability. In general, even 89% of the total length of root system belonged to fine roots, and the highest percentage (35%) was located at depths of 20 to 40 cm. Trees grafted on Mark 9 rootstock had the highest value for total root length, while the smallest values were registered on those grafted on Pajam 1 rootstock. Trees grafted on Supporter 4 rootstock had the greatest weight of the root system, while the smallest one was found on rootstock Budagowski 9.

Applications of SIMS to electronic materials and devices

1992 ◽  
Vol 50 (2) ◽  
pp. 1682-1683
Author(s):  
S.F. Corcoran
Keyword(s):  
Depth Distribution ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Device ◽  
Electronic Materials ◽  
Profile Analysis ◽  
Semiconductor Industry ◽  
Small Diameter ◽  
Depth Resolution ◽  
Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

Fluorescence effects in quantitative microprobe analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 188-189
Author(s):  
S.J.B. Reed
Keyword(s):  
Microprobe Analysis ◽  
Depth Distribution ◽  
Exciting Radiation ◽  
Primary Radiation ◽  
List Type ◽  
Type Number ◽  
Computing Power ◽  
X Ray ◽  
Fluorescent Radiation

Characteristic fluorescenceThe theory of characteristic fluorescence corrections was first developed by Castaing. The same approach, with an improved expression for the relative primary x-ray intensities of the exciting and excited elements, was used by Reed, who also introduced some simplifications, which may be summarized as follows (with reference to K-K fluorescence, i.e. K radiation of element ‘B’ exciting K radiation of ‘A’):1.The exciting radiation is assumed to be monochromatic, consisting of the Kα line only (neglecting the Kβ line).2.Various parameters are lumped together in a single tabulated function J(A), which is assumed to be independent of B.3.For calculating the absorption of the emerging fluorescent radiation, the depth distribution of the primary radiation B is represented by a simple exponential.These approximations may no longer be justifiable given the much greater computing power now available. For example, the contribution of the Kβ line can easily be calculated separately.

A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

1996 ◽  
Vol 54 ◽  
pp. 490-491
Author(s):  
P.-F. Staub ◽  
C. Bonnelle ◽  
F. Vergand ◽  
P. Jonnard
Keyword(s):  
Electron Probe ◽  
Surface Segregation ◽  
Depth Distribution ◽  
Computing Time ◽  
Depth Resolution ◽  
Physical Parameters ◽  
Electron Probe Analysis ◽  
Interface Phases ◽  
Excitation Conditions ◽  
High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

Effects of 4R Management, Climate, and Soil Variables on Nitrogen Losses

2018 ◽  
Vol 102 (3) ◽  
pp. 15-17
Author(s):  
Tai Maaz ◽  
Alison Eagle
Keyword(s):  
Nitrogen Losses ◽  
Soil Variables

Infections of bean plant and field soil are linked to region, root rot pathogen, and agro-ecosystem

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
B. Naseri ◽  
M. Gheitury ◽  
M. Veisi
Keyword(s):  
Root Rot ◽  
Multivariate Analyses ◽  
Control Method ◽  
Control Strategies ◽  
Fusarium Species ◽  
Macrophomina Phaseolina ◽  
Soil Variables ◽  
Plant Infection ◽  
Pathogen Prevalence ◽  
Soil Infestation

SummaryUnderstanding pathogen-agrosystem interaction is particularly essential when applying a control method to minimize pathogen prevalence prior to plant infection. To meet this requirement, frequency of major root rot pathogens isolated from bean root and seed, and their soil populations were examined in farmers’ fields. Multivariate analyses evidenced more frequent isolations of Fusarium solani and Rhizoctonia solani from root and seed compared to Macrophomina phaseolina and Fusarium oxysporum. Two Fusarium species had denser soil populations than R. solani and M. phaseolina. More frequent isolations of pathogens were detected in root and seed collected from Abhar and Khodabandeh compared to Kheirabad region. Agronomic and soil variables corresponded less closely to root infections compared to soil infestation and seed infections. Bean market class, herbicide application, and planting depth were linked to root, seed and soil infestations. Such information provides a basis for increased confidence in choosing appropriate control strategies for a pathogen and region in sustainable agriculture.

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