Seasonal amount, growth and depth distribution of fine roots in an irrigated and fertilized Salix viminalis L. plantation

This paper analyses the distribution of root systems of nine dwarf apple rootstocks (M.9 T 984, M.9 T 337, Jork 9, Mark 9, Budagowski 9, M.9 EMLA, Pajam 1, Pajam 2 and Supporter 4). All rootstocks were grafted with apple cultivar Granny Smith. The study was performed in the experimental orchard established in the Prespa region (Resen, R. Macedonia). The experimental orchard was established in 2004, with a planting distance 3.5 m x 1.5 m. At the end of the 7th growing season following characteristics were evaluated: length and weight of the fine (fibrous) and coarse roots, and depth distribution of the root system. Among the evaluated rootstocks statistically significant differ-ences in total length of the fine roots were not found. Between different rootstocks the results for total length of coarse roots showed more variability. In general, even 89% of the total length of root system belonged to fine roots, and the highest percentage (35%) was located at depths of 20 to 40 cm. Trees grafted on Mark 9 rootstock had the highest value for total root length, while the smallest values were registered on those grafted on Pajam 1 rootstock. Trees grafted on Supporter 4 rootstock had the greatest weight of the root system, while the smallest one was found on rootstock Budagowski 9.

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Response of leaf and fine roots proteomes of Salix viminalis L. to growth on Cr-rich tannery waste

Environmental Science and Pollution Research ◽

10.1007/s11356-016-7026-1 ◽

2016 ◽

Vol 23 (18) ◽

pp. 18394-18406 ◽

Cited By ~ 4

Author(s):

Agata Zemleduch-Barylska ◽

Gabriela Lorenc-Plucińska

Keyword(s):

Fine Roots ◽

Salix Viminalis ◽

Tannery Waste

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Fine roots of Prosopis flexuosa trees in the field. Plant and soil variables that control their growth and depth distribution

Plant Ecology ◽

10.1007/s11258-018-0889-0 ◽

2018 ◽

Vol 219 (12) ◽

pp. 1399-1412 ◽

Cited By ~ 1

Author(s):

Aranzazú Guevara ◽

Verónica Pancotto ◽

Leandro Mastrantonio ◽

Carla Valeria Giordano

Keyword(s):

Fine Roots ◽

Depth Distribution ◽

Soil Variables ◽

Field Plant ◽

Prosopis Flexuosa

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The effect of limited availability of N or water on C allocation to fine roots and annual fine root turnover in Alnus incana and Salix viminalis

Tree Physiology ◽

10.1093/treephys/tpt060 ◽

2013 ◽

Vol 33 (9) ◽

pp. 924-939 ◽

Cited By ~ 23

Author(s):

R.-M. Rytter

Keyword(s):

Fine Roots ◽

Fine Root ◽

Salix Viminalis ◽

Root Turnover ◽

Alnus Incana ◽

Fine Root Turnover ◽

Limited Availability

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Applications of SIMS to electronic materials and devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133047 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1682-1683

Author(s):

S.F. Corcoran

Keyword(s):

Depth Distribution ◽

Secondary Ion Mass Spectrometry ◽

Semiconductor Device ◽

Electronic Materials ◽

Profile Analysis ◽

Semiconductor Industry ◽

Small Diameter ◽

Depth Resolution ◽

Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

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Fluorescence effects in quantitative microprobe analysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100134533 ◽

1990 ◽

Vol 48 (2) ◽

pp. 188-189

Author(s):

S.J.B. Reed

Keyword(s):

Microprobe Analysis ◽

Depth Distribution ◽

Exciting Radiation ◽

Primary Radiation ◽

List Type ◽

Type Number ◽

Computing Power ◽

X Ray ◽

Fluorescent Radiation

Characteristic fluorescenceThe theory of characteristic fluorescence corrections was first developed by Castaing. The same approach, with an improved expression for the relative primary x-ray intensities of the exciting and excited elements, was used by Reed, who also introduced some simplifications, which may be summarized as follows (with reference to K-K fluorescence, i.e. K radiation of element ‘B’ exciting K radiation of ‘A’):1.The exciting radiation is assumed to be monochromatic, consisting of the Kα line only (neglecting the Kβ line).2.Various parameters are lumped together in a single tabulated function J(A), which is assumed to be independent of B.3.For calculating the absorption of the emerging fluorescent radiation, the depth distribution of the primary radiation B is represented by a simple exponential.These approximations may no longer be justifiable given the much greater computing power now available. For example, the contribution of the Kβ line can easily be calculated separately.

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A New Numerical Model for Electron-Probe Analysis at High Depth Resolution

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010016491x ◽

1996 ◽

Vol 54 ◽

pp. 490-491

Author(s):

P.-F. Staub ◽

C. Bonnelle ◽

F. Vergand ◽

P. Jonnard

Keyword(s):

Electron Probe ◽

Surface Segregation ◽

Depth Distribution ◽

Computing Time ◽

Depth Resolution ◽

Physical Parameters ◽

Electron Probe Analysis ◽

Interface Phases ◽

Excitation Conditions ◽

High Depth

Characterizing dimensionally and chemically nanometric structures such as surface segregation or interface phases can be performed efficiently using electron probe (EP) techniques at very low excitation conditions, i.e. using small incident energies (0.5<E0<5 keV) and low incident overvoltages (1<U0<1.7). In such extreme conditions, classical analytical EP models are generally pushed to their validity limits in terms of accuracy and physical consistency, and Monte-Carlo simulations are not convenient solutions as routine tools, because of their cost in computing time. In this context, we have developed an intermediate procedure, called IntriX, in which the ionization depth distributions Φ(ρz) are numerically reconstructed by integration of basic macroscopic physical parameters describing the electron beam/matter interaction, all of them being available under pre-established analytical forms. IntriX’s procedure consists in dividing the ionization depth distribution into three separate contributions:

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