The electrical and physical analysis of Pt gate/Al2O3/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low power and high reliability

Oxide Thickness ◽

Deep Submicron ◽

Oxide Semiconductor ◽

Physical Analysis ◽

High K ◽

Gate Oxide Thickness

Adaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide Thickness

Journal of Computer Science ◽

10.3844/jcssp.2012.515.522 ◽

2012 ◽

Vol 8 (4) ◽

pp. 515-522

Author(s):

Valentina

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Gate Oxide ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Gate Oxide Thickness

Dual Metal/High-$k$ Gate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.084201 ◽

2011 ◽

Vol 50 (8) ◽

pp. 084201

Author(s):

Yoshiaki Kikuchi ◽

Hitoshi Wakabayashi ◽

Masanori Tsukamoto ◽

Naoki Nagashima

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

High K ◽

Effect Transistor ◽

Dual Metal

Deep-Submicron Single-Gate Complementary Metal Oxide Semiconductor (CMOS) Technology Using Channel Preamorphization

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1050 ◽

1998 ◽

Vol 37 (Part 1, No. 3B) ◽

pp. 1050-1053 ◽

Cited By ~ 1

Author(s):

Masayasu Miyake ◽

Toshio Kobayashi ◽

Yutaka Sakakibara ◽

Kimiyoshi Deguchi ◽

Mitsutoshi Takahashi

Keyword(s):

Metal Oxide ◽

Cmos Technology ◽

Deep Submicron ◽

Oxide Semiconductor

Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

2012 12th International Workshop on Junction Technology ◽

10.1109/iwjt.2012.6212837 ◽

2012 ◽

Author(s):

Xiaolei Wang ◽

Wenwu Wang ◽

Kai Han ◽

Hong Yang ◽

Jing Zhang ◽

...

Keyword(s):

Band Structure ◽

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Metal Gate ◽

Gate Stack ◽

High K

Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Semiconductor Device

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l549 ◽

2002 ◽

Vol 41 (Part 2, No. 5B) ◽

pp. L549-L551

Author(s):

Hyundoek Yang ◽

Hyo Sik Chang ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Thickness ◽

Extrapolation Method ◽

Oxide Semiconductor ◽

Ultrathin Oxide

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

10.1063/1.3475774 ◽

2010 ◽

Vol 97 (6) ◽

pp. 062901 ◽

Cited By ~ 19

Author(s):

Xiaolei Wang ◽

Kai Han ◽

Wenwu Wang ◽

Xueli Ma ◽

Dapeng Chen ◽

...

Keyword(s):

Metal Oxide ◽

Electric Dipole ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Comprehensive Understanding ◽

Voltage Shift ◽

High K ◽

Flatband Voltage

Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

10.1063/1.4824422 ◽

2013 ◽

Vol 103 (15) ◽

pp. 153501 ◽

Cited By ~ 7

Author(s):

Kankat Ghosh ◽

Sudipta Das ◽

A. Fissel ◽

H. J. Osten ◽

Apurba Laha

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Next Generation ◽

Device Application

GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/44/15/155104 ◽

2011 ◽

Vol 44 (15) ◽

pp. 155104 ◽

Cited By ~ 15

Author(s):

Souvik Kundu ◽

Sandip Kumar Roy ◽

P Banerji

Keyword(s):

Titanium Dioxide ◽

Metal Oxide ◽

Dielectric Layer ◽

Semiconductor Device ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Device Performance ◽

Layer Effect

Demonstration of Y1Ba2Cu3O7−δand complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate

10.1063/1.109758 ◽

1993 ◽

Vol 63 (9) ◽

pp. 1282-1284 ◽

Cited By ~ 12

Author(s):

M. J. Burns ◽

P. R. de la Houssaye ◽

S. D. Russell ◽

G. A. Garcia ◽

S. R. Clayton ◽

...

Keyword(s):

Metal Oxide ◽

Sapphire Substrate ◽

Semiconductor Device ◽

Device Fabrication ◽

Oxide Semiconductor