Atomic-Layer Deposition of Lutetium Aluminate Thin Films for Non-Volatile Memory Applications

The properties and applications of materials with non-volatile memory based on HfO2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf0.5Zr0.5O2/ TiN/ SiO2/ Si and TiN/ HfxAl1-xOy/ Pt/ SiO2/ Si for the non-volatile memory of FeRAM and ReRAM types obtained by the atomic-layer deposition was shown. In addition, the scalability of these elements and opportunity to create promising submicron integrated circuits for ferroelectric and resistive memory were demonstrated.

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In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b00778 ◽

2017 ◽

Vol 9 (15) ◽

pp. 13286-13292 ◽

Cited By ~ 28

Author(s):

Konstantin V. Egorov ◽

Dmitry S. Kuzmichev ◽

Pavel S. Chizhov ◽

Yuri Yu. Lebedinskii ◽

Cheol Seong Hwang ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Oxygen Vacancies ◽

Atomic Layer ◽

Resistive Switching Memory ◽

Layer Deposition ◽

In Situ Control ◽

Memory Applications ◽

Switching Memory

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New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices

Microelectronic Engineering ◽

10.1016/j.mee.2008.07.016 ◽

2008 ◽

Vol 85 (12) ◽

pp. 2442-2444 ◽

Cited By ~ 40

Author(s):

N. Huby ◽

G. Tallarida ◽

M. Kutrzeba ◽

S. Ferrari ◽

E. Guziewicz ◽

...

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Memory Devices ◽

Layer Deposition ◽

Non Volatile Memory ◽

Volatile Memory

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

ACS Applied Electronic Materials ◽

10.1021/acsaelm.0c01079 ◽

2021 ◽

Vol 3 (2) ◽

pp. 999-1005

Author(s):

Hyeok Jae Lee ◽

Jin Ha Hwang ◽

Ji-Yong Park ◽

Sang Woon Lee

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Titanium Nitride ◽

Surface Reaction ◽

Atomic Layer ◽

Reaction Route ◽

Layer Deposition

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Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

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