ZnO by Atomic Layer Deposition for Vertically Stacked Non-Volatile Memory Devices

2008 ◽  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Memory Devices ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

TiO2Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application

2007 ◽  
Vol 46 (4B) ◽  
pp. 2523-2526 ◽  
Author(s):  
Cha-Hsin Lin ◽  
Ching-Chiun Wang ◽  
Pei-Jer Tzeng ◽  
Siddheswar Maikap ◽  
Heng-Yuan Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

Atomic Layer Deposition Plasma-Based Undoped-HfO2 Ferroelectric FETs for Non-Volatile Memory

2021 ◽  
pp. 1-1
Author(s):  
Jun-Dao Luo ◽  
Yu-Ying Lai ◽  
Kuo-Yu Hsiang ◽  
Chia-Feng Wu ◽  
Hao-Tung Chung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf0.5Zr0.5O2/ TiN/SiO2/Si and TiN/HfXAl1-XOY/Pt/SiO2/Si Test Structures Obtained on the National Technological Basis

2018 ◽  
Vol 386 ◽  
pp. 172-177
Author(s):  
Oleg M. Orlov
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Nonvolatile Memory ◽  
Atomic Layer ◽  
Resistive Memory ◽  
Technological Basis ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

The properties and applications of materials with non-volatile memory based on HfO2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf0.5Zr0.5O2/ TiN/ SiO2/ Si and TiN/ HfxAl1-xOy/ Pt/ SiO2/ Si for the non-volatile memory of FeRAM and ReRAM types obtained by the atomic-layer deposition was shown. In addition, the scalability of these elements and opportunity to create promising submicron integrated circuits for ferroelectric and resistive memory were demonstrated.

Atomic-Layer Deposition of Lutetium Aluminate Thin Films for Non-Volatile Memory Applications

2019 ◽  
Vol 34 (1) ◽  
pp. 473-478 ◽  
Author(s):  
Christoph Adelmann ◽  
Johan Swerts ◽  
Thierry Conard ◽  
Bert Brijs ◽  
Alexis Franquet ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

scholarly journals Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 55750-55755 ◽  
Author(s):  
Hwanyeol Park ◽  
Sungwoo Lee ◽  
Ho Jun Kim ◽  
Euijoon Yoon ◽  
Gun-Do Lee
Keyword(s):  
Atomic Layer Deposition ◽  
First Principles ◽  
Atomic Layer ◽  
Fabrication Process ◽  
Device Performance ◽  
Memory Devices ◽  
Dissociation Reaction ◽  
First Principles Study ◽  
Layer Deposition

In the fabrication process of memory devices, a void-free tungsten (W) gate process with good conformability is very important for improving the conductivity of the W gate, leading to enhancement of device performance.

Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices

2014 ◽  
Vol 2 (17) ◽  
pp. 3204-3211 ◽  
Author(s):  
Raúl Zazpe ◽  
Mariana Ungureanu ◽  
Federico Golmar ◽  
Pablo Stoliar ◽  
Roger Llopis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Devices ◽  
Deposition Parameters ◽  
Layer Deposition

Solid-Phase Epitaxy of Perovskite High Dielectric PrAlO3 Films Grown by Atomic Layer Deposition for Use in Two-Dimensional Electronics and Memory Devices

2019 ◽  
Vol 2 (11) ◽  
pp. 7449-7458 ◽  
Author(s):  
Wathsala L. I. Waduge ◽  
Yajin Chen ◽  
Peng Zuo ◽  
Navoda Jayakodiarachchi ◽  
Thomas F. Kuech ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Solid Phase ◽  
Atomic Layer ◽  
Memory Devices ◽  
Solid Phase Epitaxy ◽  
Two Dimensional ◽  
Layer Deposition ◽  
High Dielectric
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