Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates

1997 ◽  
Vol 26 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Kun Wang ◽  
Dimitris Pavlidis ◽  
Jun Cao
1995 ◽  
Vol 395 ◽  
Author(s):  
W. Van Der Stricht ◽  
I. Moerman ◽  
P. Demeester ◽  
J.A Crawley ◽  
E.J. Thrush ◽  
...  

ABSTRACTIn this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. Results on the effect of a GaN nucleation layer on the properties of the overgrown GaN epilayer are presented. Characterisation includes surface morphology studies, DC X-ray diffraction and optical characterisation. Best film quality so far has a double crystal X-ray half width of 85 arcsec at approximately 1 μm thickness.


Author(s):  
J. E. O'Neal ◽  
J. J. Bellina ◽  
B. B. Rath

Thin films of the bcc metals vanadium, niobium and tantalum were epitaxially grown on (0001) and sapphire substrates. Prior to deposition, the mechanical polishing damage on the substrates was removed by an in-situ etch. The metal films were deposited by electron-beam evaporation in ultra-high vacuum. The substrates were heated by thermal contact with an electron-bombarded backing plate. The deposition parameters are summarized in Table 1.The films were replicated and examined by electron microscopy and their crystallographic orientation and texture were determined by reflection electron diffraction. Verneuil-grown and Czochralskigrown sapphire substrates of both orientations were employed for each evaporation. The orientation of the metal deposit was not affected by either increasing the density of sub-grain boundaries by about a factor of ten or decreasing the deposition rate by a factor of two. The results on growth epitaxy are summarized in Tables 2 and 3.


2009 ◽  
Vol 39 (1) ◽  
pp. 43-48 ◽  
Author(s):  
S. Farrell ◽  
G. Brill ◽  
Y. Chen ◽  
P. S. Wijewarnasuriya ◽  
Mulpuri V. Rao ◽  
...  

2009 ◽  
Vol 23 (24) ◽  
pp. 4933-4941
Author(s):  
GUI-FANG HUANG ◽  
WEI-QING HUANG ◽  
LING-LING WANG ◽  
ZHONG XIE ◽  
BING-SUO ZOU ◽  
...  

To develop high-quality film device with good reliability, it is often essential to be able to evaluate the parameters such as stress, the biaxial elastic modulus, and coefficient of thermal expansion (CTE) of film. Based on the stress measurement in situ during the thermal cycle by laser scanning method, two techniques were used to measure the biaxial elastic modulus and CTE of BaTiO 3 films deposited on substrate. The value of the biaxial elastic modulus and CTE for BaTiO 3 films determined from two methods is close, in which the biaxial elastic modulus of BaTiO 3 films is higher than that of corresponding bulk while the CTE of BaTiO 3 films is a little smaller than that of bulk material.


2002 ◽  
Vol 389-393 ◽  
pp. 339-342 ◽  
Author(s):  
Guo Sheng Sun ◽  
M.C. Luo ◽  
Lei Wang ◽  
S.R. Zhu ◽  
Jin Min Li ◽  
...  
Keyword(s):  

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.


1996 ◽  
Vol 452 ◽  
Author(s):  
S. P. McGinnis ◽  
J. N. Cleary ◽  
B. Das

AbstractWe have developed a nanogrowth technology for the fabrication of periodic arrays of semiconductor nanostructures on silicon that is currently being investigated for silicon based x-ray detectors. The semiconductor nanostructures are formed by chemical synthesis in pores of a template created by the anodization of aluminum on a silicon substrate. The use of the silicon substrate allows greater control over the aluminum thin film properties, better in situ monitoring of the pore formation process, and the direct integration of nanostructure arrays with conventional silicon technology.


1998 ◽  
Vol 537 ◽  
Author(s):  
Zhonghai Yu ◽  
M.A.L. Johnson ◽  
J.D. Brown ◽  
N.A. El-Masry ◽  
J. F. Muth ◽  
...  

AbstractThe epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 2 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800°C to 1120°C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990°C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.


2010 ◽  
Vol 2010 (1) ◽  
pp. 000450-000457
Author(s):  
Michael Gaynes ◽  
Timothy Chainer ◽  
Edward Yarmchuk ◽  
John Torok ◽  
David Edwards ◽  
...  

A thermal solution for an array of voltage transformer modules which are cooled by a large area, common aluminum heat spreader for a high end server was evaluated using an in situ, capacitive bond line thermal measurement technique. The method measures the capacitance of a non-electrically conducting thermal interface material (TIM) between the electronic module and heat spreader to quantify the TIM bond line effective thickness during assembly and operation. The thermal resistance of the TIM has the same geometric dependence as the inverse of capacitance, therefore, the capacitive technique also provided a monitor of the thermal performance of the interface. This technique was applied to measure the bond line in real time during the assembly of the heat spreader to an array of 37 modules mounted on a printed circuit board. The results showed that the target bond lines were not achieved by application of a constant force alone on the heat spreader, and guided an improved assembly process. The mechanical motion of the TIM was monitored in situ during thermal cycling and found to fluctuate systematically from the hot to cold portions of the thermal cycle, either compressing or stretching the TIM respectively. The capacitive bond line trend showed thermal interface degradation vs. cycle count for several modules which was confirmed by disassembly and visual inspection. Areas of depleted TIM ranged as high as 25% of the module area. Several design and material changes were shown to improve the TIM stability. Power cycling tests were run in parallel to the thermal cycle tests to help relate the results to field performance. The capacitance technique enabled the development and verification of a thermal solution for a complex mechanical system early in the development cycle.


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