Epitaxial growth of SrRuO3 thin films by RF sputtering and study of surface morphology

In particular, the PES substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of thin films growth for epitaxial growth by the use of a buffer layer on the amorphous PES substrate is essential. Therefore, in this study, we deposited ZnO thin-film on PES substrate, and grown ZnO nanorods at various ZnO concentrations during 1 hour. We used SEM, XRD, and HP 4145B for observe the structural and electrical characteristics of ZnO nanorods. UV-visible spectrometer was used to get the band gap and transmittance.

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The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films

Journal of Physics Conference Series ◽

10.1088/1742-6596/2103/1/012086 ◽

2021 ◽

Vol 2103 (1) ◽

pp. 012086

Author(s):

A K Kaveev ◽

D N Bondarenko ◽

O E Tereshchenko

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Epitaxial Growth ◽

Epitaxial Layer ◽

Topological Insulator ◽

Growth Temperature ◽

Lateral Size ◽

Layer Surface ◽

Significant Extent ◽

Average Value

Abstract The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.

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Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

MRS Proceedings ◽

10.1557/proc-606-181 ◽

1999 ◽

Vol 606 ◽

Cited By ~ 2

Author(s):

Keishi Nishio ◽

Jirawat Thongrueng ◽

Yuichi Watanabe ◽

Toshio Tsuchiya

Keyword(s):

Thin Film ◽

Thin Films ◽

Epitaxial Growth ◽

Raw Materials ◽

Substrate Surface ◽

Sol Gel ◽

Tungsten Bronze ◽

Monomethyl Ether ◽

Tetragonal Tungsten Bronze ◽

Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

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The Surface Morphology of CdTe Thin Films Obtained by Open Evaporation in Vacuum

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.9(5).05016 ◽

2017 ◽

Vol 9 (5) ◽

pp. 05016-1-05016-5 ◽

Cited By ~ 3

Author(s):

Y. P. Saliy ◽

◽

L. I. Nykyruy ◽

R. S. Yavorskyi ◽

S. Adamiak ◽

...

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Cdte Thin Films

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Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

Journal of Materials Chemistry A ◽

10.1039/c8ta09425j ◽

2019 ◽

Vol 7 (17) ◽

pp. 10696-10701 ◽

Cited By ~ 4

Author(s):

Fábio G. Figueiras ◽

J. Ramiro A. Fernandes ◽

J. P. B. Silva ◽

Denis O. Alikin ◽

Eugénia C. Queirós ◽

...

Keyword(s):

Thin Films ◽

Rf Sputtering ◽

Optical Gap ◽

Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

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Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽

10.3390/ma14040724 ◽

2021 ◽

Vol 14 (4) ◽

pp. 724

Author(s):

Tong Li ◽

Masaya Ichimura

Keyword(s):

Thin Films ◽

Aqueous Solution ◽

Optical Properties ◽

Surface Morphology ◽

Magnesium Hydroxide ◽

Dry Deposition ◽

Visible Range ◽

Substrate Heating ◽

Water Effects ◽

Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

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