Epitaxial growth of lead zirconium titanate thin films on Ag buffered Si substrates using rf sputtering

AbstractHighly (100) and (111) oriented lead zirconium titanate (PZT) thin films have been grown by using reactive rf-sputtering. PZT thin films with rhombohedral composition have been grown in different orientations using selective rapid thermal annealing cycles. The polarization versus electric field curves and the resistivity of the films were measured using a standardized RT66A ferroelectric test system. The dielectric constant and the loss were determined using an impedence analyzer. The PZT(100) oriented films showed larger dielectric constant and loss than the PZT(111) films. The PZT(100) films possessed sharper square-like hysteresis loops compared to the PZT(111) films, as expected from our phenomenological calculations.

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Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.12.048 ◽

2004 ◽

Vol 264 (1-3) ◽

pp. 463-467 ◽

Cited By ~ 16

Author(s):

D. Akai ◽

K. Hirabayashi ◽

M. Yokawa ◽

K. Sawada ◽

M. Ishida

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Buffer Layer ◽

Si Substrates

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Epitaxial growth of magnetoresistive (00h), (0hh), and (hhh) La2/3Sr1/3MnO3 thin films on (001)Si substrates

Applied Physics Letters ◽

10.1063/1.123674 ◽

1999 ◽

Vol 74 (12) ◽

pp. 1743-1745 ◽

Cited By ~ 19

Author(s):

J. Fontcuberta ◽

M. Bibes ◽

B. Martínez ◽

V. Trtik ◽

C. Ferrater ◽

...

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Si Substrates

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Epitaxial growth of In1−x Gax Sb thin films by multitarget rf sputtering. (USA)

Vacuum ◽

10.1016/s0042-207x(76)81190-6 ◽

1976 ◽

Vol 26 (12) ◽

pp. 555

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Rf Sputtering

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Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer

Thin Solid Films ◽

10.1016/s0040-6090(02)00623-5 ◽

2002 ◽

Vol 415 (1-2) ◽

pp. 272-275 ◽

Cited By ~ 34

Author(s):

J Tashiro ◽

A Sasaki ◽

S Akiba ◽

S Satoh ◽

T Watanabe ◽

...

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Room Temperature ◽

Oxide Thin Films ◽

Si Substrates

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Effects of adhesion layers on the ferroelectric properties of lead zirconium titanate thin films deposited on silicon nitride coated silicon substrates

Thin Solid Films ◽

10.1016/j.tsf.2007.10.130 ◽

2008 ◽

Vol 516 (18) ◽

pp. 6052-6057 ◽

Cited By ~ 3

Author(s):

Omar Zohni ◽

Gregory Buckner ◽

Taeyun Kim ◽

Angus Kingon ◽

Jeff Maranchi ◽

...

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

Ferroelectric Properties ◽

Silicon Substrates ◽

Zirconium Titanate ◽

Lead Zirconium Titanate

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InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES

International Journal of Modern Physics B ◽

10.1142/s0217979212501378 ◽

2012 ◽

Vol 26 (31) ◽

pp. 1250137 ◽

Cited By ~ 7

Author(s):

M. AMIRHOSEINY ◽

Z. HASSAN ◽

S. S. NG ◽

L. S. CHUAH ◽

M. A. AHMAD ◽

...

Keyword(s):

Thin Films ◽

Heat Treatment ◽

Ohmic Contact ◽

Room Temperature ◽

Thermal Evaporation ◽

Indium Nitride ◽

Rf Sputtering ◽

Nitrogen Gas ◽

Si Substrates ◽

Current Voltage

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.

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