Hydroquinone monosulfonate-doped polypyrrole electrodeposited on very low cost commercial junction field effect transistors as a novel ion sensitive field effect transistor pH sensor

2013 ◽  
Vol 11 (4) ◽  
pp. 997-1004 ◽  
Author(s):  
Morteza Akhond ◽  
Amin Farhangfar
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Ph Sensor ◽  
Effect Transistor ◽  
Junction Field Effect Transistors

Extended Gate Field Effect Transistor Using GaN/Si Hybrids Nanostructures for pH Sensor

NANO ◽  
2017 ◽  
Vol 12 (09) ◽  
pp. 1750114 ◽  
Author(s):  
Manchen Zhang ◽  
Ruzhi Wang ◽  
Zhen Shen ◽  
Yuhang Ji
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Ph Sensor ◽  
Chemical Vapor ◽  
Hybrid Nanostructure ◽  
Si Nanowires ◽  
Etching Technique ◽  
Effect Transistor ◽  
Hybrid Sensors

The pH sensor of an extended gate field effect transistor (EGFET) with gallium nitride/silicon hybrid nanostructure is fabricated and analyzed. Si nanowires (NWs) are fabricated via the Ag-assisted electroless etching technique and are then covered by GaN NWs through plasma-enhanced chemical vapor deposition (PECVD). The GaN nanostructure is synthesized by introducing gallium oxide (Ga2O3) and nitrogen (N2) for the growth of NWs. The GaN nanowires supply a larger surface area than that of the pristine Si NWs, where there is a better sensitivity for pH sensor. The GaN/Silicon hybrid sensors exhibit a sensitivity higher (50.4[Formula: see text]mV/pH) than that of pristine Si NWs sensors (41.2[Formula: see text]mV/pH). This GaN/Si hybrid pH sensor prepared by simple and low-cost method may be potentially applied for cheap biosensor devices.

scholarly journals Tuning ambipolarity in a polymer field effect transistor using graphene electrodes

2020 ◽  
Vol 8 (24) ◽  
pp. 8120-8124 ◽  
Author(s):  
Kaushik Bairagi ◽  
Sara Catalano ◽  
Francesco Calavalle ◽  
Elisabetta Zuccatti ◽  
Roger Llopis ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Materials ◽  
Field Effect Transistors ◽  
Low Cost ◽  
The Other ◽  
Other Hand ◽  
Effect Transistor ◽  
The One

Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene.

scholarly journals Photoresponse Dimensionality of Organic Field-Effect Transistor

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7465
Author(s):  
Tomas Vincze ◽  
Michal Micjan ◽  
Juraj Nevrela ◽  
Martin Donoval ◽  
Martin Weis
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Flexible Substrates ◽  
Organic Field Effect Transistors ◽  
Effect Transistor ◽  
Absorption Characteristics

Organic field-effect transistors have been envisioned for advanced photodetectors because the organic semiconductors provide unique absorption characteristics, low-cost fabrication, or compatibility with flexible substrates. However, the response time of organic phototransistors still does not reach the required application level. Here, we report the photoresponse of copper phthalocyanine phototransistor in a steady state and under pulsed illumination. The detailed analysis based on the random walk among a field of traps was used to evaluate the dimensionality of electron transport in a device.

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Processing Technique ◽  
Solution Processing ◽  
Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

scholarly journals Palladium-oxide Extended Gate Field Effect Transistor as pH Sensor

2021 ◽  
pp. 100102
Author(s):  
Prashant Sharma ◽  
Rini Singh ◽  
Rishi Sharma ◽  
Ravindra Mukhiya ◽  
Kamlendra Awasthi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Palladium Oxide ◽  
Effect Transistor
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