Yarn Sample Preparation Techniques and Yarn Diameter Measurement for Analysing Cut-Cross Sectional View of Hollow Core Dref Spun Yarns

2014 ◽  
Vol 95 (2) ◽  
pp. 89-95 ◽  
Author(s):  
V. Chandrasekaran ◽  
P. Senthilkumar ◽  
M. Senthilkumar
Keyword(s):  
Sample Preparation ◽  
Hollow Core ◽  
Diameter Measurement ◽  
Cross Sectional ◽  
Yarn Diameter ◽  
Spun Yarns ◽  
Preparation Techniques

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

The Challenge and Methods of TEM Cross-Sectioning of < 0.25 Micron Plugs

1998 ◽  
Vol 523 ◽  
Author(s):  
C. Amy Hunt ◽  
Yuhong Zhang ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Adhesion Layer ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Sectional Plane ◽  
Preparation Techniques

AbstractTransmission electron microscopy (TEM) is a useful tool in process evaluation and failure analysis for semiconductor industries. A common focus of semiconductor TEM analyses is metalization vias (plugs) and it is often desirable to cross-section through a particular one. If the cross-sectional plane deviates away from the center of the plug, then the thin adhesion layer around the plug will be blurred by surrounding materials such as the inter-layer dielectric and the plug material. The importance of these constraints, along with the difficulty of precision sample preparation, has risen sharply as feature sizes have fallen to 0.25 μm and below. The suitability of common sample preparation techniques for these samples is evaluated.

TEM sample preparation with focused ion beams

1991 ◽  
Vol 49 ◽  
pp. 1108-1109
Author(s):  
S. J. Kirch ◽  
Ron Anderson ◽  
Stanley J. Klepeis
Keyword(s):  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Preparation ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Special Surface ◽  
Preparation Techniques

The continuing reduction in the sizes of features of interest for integrated circuit failure analysis requires greater precision in transmission electron microscopy (TEM) sample preparation. With minimum feature sizes approaching 0.5 μm, the mere finding of such a feature at a polished edge, let alone preparing a TEM sample containing it becomes a formidable task. The required substantial thinning also increases the risk of loss of what may be a unique sample.We present in this paper a technique that allows localized thinning of cross-sectional TEM samples using a focused ion beam (FIB) machine. Standard preparation techniques are used to make a cross-sectional TEM sample that would otherwise be too thick to be very useful for TEM analysis. This sample is then placed in the FIB machine, which is used as a micromachining tool. No special surface preparation is necessary and the secondary electron signal generated by the ion beam provides an image that can be used to locate the feature of interest.

Cross-Sectional Sample Preparation Techniques for 2D Doping Profiling of Specific Site by SCM

2007 ◽  
Author(s):  
Tae-Kwon Lee ◽  
Tae-Sun Back ◽  
Jong-Hyeop Kim ◽  
Yoon-Baek Park ◽  
Ho-Joung Kim ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Site ◽  
Contact Mode ◽  
Cross Sectional ◽  
Precise Method ◽  
Front End ◽  
Capacitance Variation ◽  
Preparation Techniques

Abstract Scanning capacitance microscopy (SCM) is an SPM technique which measures capacitance variation between tip and sample generated by applied AC bias while the tip is scanning in contact mode. Focused ion beam (FIB) milling is the more precise method to perform cross-sectioning of a specific site. The surface amorphization and charge trap layers formed during FIB machining affect the SCM dC/dV signal. This article demonstrates that micro-cleaving and FIB milling are capable of preparing a cross-sectional sample for 2D doping profiling of a specific site for SCM observation. Using the Micro-cleaving technique, a cross-sectional sample can be prepared easily with higher accuracy and shorter time than using a polishing method. However, Micro-cleaving can't be used by itself in the case of cross-sectioning a pattern formed by front end processing of sub-micron patterns. The FIB technique can assist the Micro-cleaving technique in cleaving of front end patterns.

Preparation of Cross-Sectional TEM Samples of PbTe and CdxPb1−x Te on BaF2

1990 ◽  
Vol 199 ◽  
Author(s):  
John P. McCaffrey ◽  
Suhit R. Das ◽  
John G. Cook
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Sample Preparation ◽  
Argon Atom ◽  
Low Energy ◽  
Atom Beam ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Preparation Techniques

ABSTRACTEpitaxial PbTe and CdxPb1−xTe films have been grown on single crystal (111) BaF2 by low energy bias sputtering, and have been analyzed by transmission electron microscopy (TEM) and transmission electron diffraction (TED). Preparation of suitable cross-sectional TEM samples was made difficult by the tendency of the substrate to cleave apart during dimpling, and by the epoxy forming bridges across the sample during atom milling. Suitable preparation techniques were developed employing back-polishing the BaF2 substrates to <0.2 mm thickness, using a suitable epoxy, and shielding the argon atom beam during milling to prevent milling parallel to the surface. In cases where an epoxy bridge did form across the sample, the bridge was broken manually or by atom milling, depending upon the area of sample which was being investigated. These techniques are applicable to other materials which produce similar problems during TEM sample preparation.

A Freeze Shadow Technique for the Preparation of Soft Paint Latexes for Electron Microscopy

1977 ◽  
Vol 35 ◽  
pp. 314-315
Author(s):  
Earl R. Walter ◽  
Glen H. Bryant
Keyword(s):  
Sample Preparation ◽  
High Vacuum ◽  
Vacuum System ◽  
Latex Particles ◽  
New Methods ◽  
Diffusion Pump ◽  
Film Forming ◽  
Routine Basis ◽  
Distribution Studies ◽  
Preparation Techniques

With the development of soft, film forming latexes for use in paints and other coatings applications, it became desirable to develop new methods of sample preparation for latex particle size distribution studies with the electron microscope. Conventional latex sample preparation techniques were inadequate due to the pronounced tendency of these new soft latex particles to distort, flatten and fuse on the substrate when they dried. In order to avoid these complications and obtain electron micrographs of undistorted latex particles of soft resins, a freeze-dry, cold shadowing technique was developed. The method has now been used in our laboratory on a routine basis for several years.The cold shadowing is done in a specially constructed vacuum system, having a conventional mechanical fore pump and oil diffusion pump supplying vacuum. The system incorporates bellows type high vacuum valves to permit a prepump cycle and opening of the shadowing chamber without shutting down the oil diffusion pump. A baffeled sorption trap isolates the shadowing chamber from the pumps.

Advanced TEM sample preparation techniques for submicron Si devices

1995 ◽  
Vol 53 ◽  
pp. 516-517 ◽  
Author(s):  
P. B. Basham ◽  
H. L. Tsai
Keyword(s):  
Sample Preparation ◽  
Process Development ◽  
Light Transmission ◽  
Specific Area ◽  
Turnaround Time ◽  
Small Hole ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Polished Side ◽  
Preparation Techniques

The use of transmission electron microscopy (TEM) to support process development of advanced microelectronic devices is often challenged by a large amount of samples submitted from wafer fabrication areas and specific-spot analysis. Improving the TEM sample preparation techniques for a fast turnaround time is critical in order to provide a timely support for customers and improve the utilization of TEM. For the specific-area sample preparation, a technique which can be easily prepared with the least amount of effort is preferred. For these reasons, we have developed several techniques which have greatly facilitated the TEM sample preparation.For specific-area analysis, the use of a copper grid with a small hole is found to be very useful. With this small-hole grid technique, TEM sample preparation can be proceeded by well-established conventional methods. The sample is first polished to the area of interest, which is then carefully positioned inside the hole. This polished side is placed against the grid by epoxy Fig. 1 is an optical image of a TEM cross-section after dimpling to light transmission.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

Novel Failure Analysis Sample Preparation Techniques for PoP Packaging

2012 ◽  
Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Failure Mechanisms ◽  
Preparation Process ◽  
Space Saving ◽  
Optical Probing ◽  
Preparation Techniques

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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