scholarly journals Numerical analysis of DDFV schemes for semiconductors energy-transport models

2021 ◽  
Vol 41 (1) ◽  
Author(s):  
Marianne Bessemoulin-Chatard ◽  
Giulia Lissoni ◽  
Hélène Mathis
Keyword(s):  
Numerical Analysis ◽  
Energy Transport ◽  
Transport Models

scholarly journals Analysis of numerical schemes for semiconductor energy-transport models

2021 ◽  
Author(s):  
Marianne Bessemoulin-Chatard ◽  
Claire Chainais-Hillairet ◽  
Hélène Mathis
Keyword(s):  
Energy Transport ◽  
Numerical Schemes ◽  
Transport Models

scholarly journals Reduced models of turbulent transport in helical plasmas including effects of zonal flows and trapped electrons

2020 ◽  
Vol 86 (3) ◽  
Author(s):  
S. Toda ◽  
M. Nunami ◽  
H. Sugama
Keyword(s):  
Energy Transport ◽  
Turbulent Transport ◽  
Zonal Flow ◽  
Transport Models ◽  
Nonlinear Simulation ◽  
Ion Energy ◽  
Trapped Electrons ◽  
Zonal Flows ◽  
Reduced Models ◽  
Potential Fluctuation

Using transport models, the impacts of trapped electrons on zonal flows and turbulence in helical field configurations are studied. The effect of the trapped electrons on the characteristic quantities of the linear response for zonal flows is investigated for two different field configurations in the Large Helical Device. The turbulent potential fluctuation, zonal flow potential fluctuation and ion energy transport are quickly predicted by the reduced models for which the linear and nonlinear simulation results are used to determine dimensionless parameters related to turbulent saturation levels and typical zonal flow wavenumbers. The effects of zonal flows on the turbulent transport for the case of the kinetic electron response are much smaller than or comparable to those in an adiabatic electron condition for the two different field configurations. It is clarified that the effect of zonal flows on the turbulent transport due to the trapped electrons changes, depending on the field configurations.

scholarly journals Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design ◽  
1995 ◽  
Vol 3 (2) ◽  
pp. 211-224 ◽  
Author(s):  
Edwin C. Kan ◽  
Zhiping Yu ◽  
Robert W. Dutton ◽  
Datong Chen ◽  
Umberto Ravaioli
Keyword(s):  
Numerical Simulation ◽  
Computational Efficiency ◽  
Recent Progress ◽  
Energy Transport ◽  
Semiconductor Devices ◽  
Boltzmann Transport Equation ◽  
Boltzmann Transport ◽  
Drift Diffusion ◽  
Thermoelectric Effects ◽  
Transport Models

According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer's approach [1, 2], and the Energy Transport (ET) model which originates from Strattton's approximation [3, 4]. The formulation, discretization, parametrization and numerical properties of the HD and ET models are carefully examined and compared. The well-known spurious velocity spike of the HD model in simple nin structures can then be understood from its formulation and parametrization of the thermoelectric current components. Recent progress in treating negative differential resistances with the ET model and extending the model to thermoelectric simulation is summarized. Finally, we propose a new model denoted by DUET (Dual ET)which accounts for all thermoelectric effects in most modern devices and demonstrates very good numerical properties. The new advances in applicability and computational efficiency of the ET model, as well as its easy implementation by modifying the conventional drift-diffusion (DD) model, indicate its attractiveness for numerical simulation of advanced semiconductor devices

scholarly journals Multiscale Modeling of Non-Isothermal Fluid Transport Involved in Drying Process of Porous Media

2021 ◽  
Author(s):  
Kieu Hiep Le
Keyword(s):  
Multiscale Modeling ◽  
Fluid Transport ◽  
Energy Transport ◽  
Drying Process ◽  
Transport Models ◽  
Flow Displacement ◽  
Multiphase Fluids ◽  
Isothermal Fluid ◽  
Continuum Scale ◽  
And Storage

To preserve the product quality as well as to reduce the logistics and storage cost, drying process is widely applied in the processing of porous material. In consideration of transport phenomena that involve a porous medium during drying, the complex morphology of the medium, and its influences on the distribution, flow, displacement of multiphase fluids are encountered. In this chapter, the recent advanced mass and energy transport models of drying processes are summarized. These models which were developed based on both pore- and continuum-scales, may provide a better fundamental understanding of non-isothermal liquid–vapor transport at both the continuum scale and the pore scale, and to pave the way for designing, operating, and optimizing drying and relevant industrial processes.

scholarly journals Stationary states of weak coupling limit-type Markov generators and quantum transport models

2020 ◽  
Vol 23 (01) ◽  
pp. 2050003
Author(s):  
A. Hernández-Cervantes ◽  
R. Quezada
Keyword(s):  
Quantum Transport ◽  
Weak Coupling ◽  
Energy Transport ◽  
Transport Model ◽  
Weak Coupling Limit ◽  
Stationary States ◽  
Transport Models ◽  
Markov Generator ◽  
Kraus Operators ◽  
Creation Operators

We prove that every stationary state in the annihilator of all Kraus operators of a weak coupling limit-type Markov generator consists of two pieces, one of them supported on the interaction-free subspace and the second one on its orthogonal complement. In particular, we apply the previous result to describe in detail the structure of a slightly modified quantum transport model due to Arefeva et al. (modified AKV’s model) studied first in [J. C. García et al., Entangled and dark stationary states of excitation energy transport models in many-particles systems and photosynthesis, Infin. Dimens. Anal. Quantum Probab. Relat. Top. 21(3) (2018), Article ID: 1850018, p. 21, doi:10.1142/S0219025718500182], in terms of generalized annihilation and creation operators.

scholarly journals Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter junction Semiconductors Devices Using Mixed Finite Elements

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 375-379
Author(s):  
A. Marrocco ◽  
Ph. Montarnal
Keyword(s):  
Finite Elements ◽  
Energy Transport ◽  
Mixed Finite Elements ◽  
Positive Definite ◽  
Finite Elements Method ◽  
Transport Models ◽  
Symmetric Positive Definite ◽  
Dimensional Simulation ◽  
Definite Problem ◽  
Vector Valued

We study the application of the mixed finite elements method (MFE) for the bidimensional simulation of the simplified hydrodynamic and energy-transport models. The two main points are the use of entropic variables which gives a symmetric positive definite problem and a coupled computation of the equations for electrons which requires a generalization of the MFE method for vector valued problems. We give numerical results on JFET and HEMT devices.

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