Improving Methodology of Particulate Measurement in Periodic Technical Inspection with High-Sensitivity Techniques: Laser Light Scattering Photometry and Particle Number Method

2019 ◽  
Vol 5 (1) ◽  
pp. 37-44 ◽  
Author(s):  
Hiroyuki Yamada
1998 ◽  
Vol 37 (Part 2, No. 10B) ◽  
pp. L1264-L1267 ◽  
Author(s):  
Hiroharu Kawasaki ◽  
Kazutaka Sakamoto ◽  
Shinichi Maeda ◽  
Tsuyoshi Fukuzawa ◽  
Masaharu Shiratani ◽  
...  

2010 ◽  
Vol 1245 ◽  
Author(s):  
Toshihiro Kamei ◽  
Amane Shikanai

AbstractMost of micromachined and/or integrated fluorescence detectors suffer from high limit of detection (LOD) compared to conventional optical system that consists of discrete optical components, which is mainly due to higher laser light scattering of integrated optics rather than detector sensitivity. In this work, we have reduced background (BG) photocurrent of an integrated hydrogenated amorphous Si (a-Si:H) fluorescence detector due to laser light scattering by nearly one order magnitude, significantly improving a LOD. The detection platform comprises a microlens and the annular fluorescence detector where a thick SiO2/Ta2O5 multilayer optical interference filter (>6 μm) is monolithically integrated on an a-Si:H pin photodiode. With a microfluidic capillary electrophoresis (CE) device mounted on the platform, the system is demonstrated to separate DNA restriction fragment digests (LOD: 58 pg/μL) as well as 2 nM of fluorescein-labeled oligomer (LOD: 240 pM) with high speed, high sensitivity and high separation efficiency. The integrated a-Si:H fluorescence detector exhibits high sensitivity for practical fluorescent labeling dyes as well as feasibility of monolithic integration with a laser diode, making it ideal for application to point-of-care microfluidic biochemical analysis.


1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.


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