Line tension induced dislocation motion at a surface of germanium and silicon

1979 ◽  
Vol 27 (8) ◽  
pp. 1355-1362 ◽  
Author(s):  
H.-J. Möller
2002 ◽  
Vol 17 (7) ◽  
pp. 1863-1870 ◽  
Author(s):  
Richard P. Vinci ◽  
Stefanie A. Forrest ◽  
John C. Bravman

Wafer curvature was used to study the thermal–mechanical behavior of 1-μm Cu thin films capped with a 100-nm-thick Si3N4 layer. These films were grown with either a Ta or a Si3N4 underlayer. Films on Si3N4 that were exposed to oxygen at the film/capping layer interface or at the center of the copper layer exhibited Bauschinger-like yielding at low stress. Stacks deposited under continuous vacuum, with a Ta underlayer, with carbon exposure at the upper surface of the copper film, or with oxygen exposure of only the underlayer did not demonstrate the anomalous yielding. Preferential diffusion of oxygen into copper grain boundaries or interfaces is the likely cause of the early yield behavior. Possible mechanisms include an increase in interface adhesion due to the presence of oxygen in solution and diffusion-induced dislocation glide as an additional driving force for dislocation motion at low applied stress.


1995 ◽  
Vol 404 ◽  
Author(s):  
U. Messerschmidt ◽  
D. Baither ◽  
M. Bartsch ◽  
B. Baufeld ◽  
D. Häuβler ◽  
...  

AbstractA high-temperature straining stage was designed for the Halle HVEM. Electron bombardment is used to heat the specimen grips. At present the stage is operated at a maximum temperature of 1250 °C, but somewhat higher temperatures should also be possible. Details of the stage are described and results are presented on several materials. In yttria fully-stabilized (cubic) zirconia, the different slip behaviour on cube and octahedral planes is demonstrated at a specimen temperature of about 1150 °C. While the dislocations move very jerkily on the (primary) cube planes, their motion is more smooth on the octahedral planes suggesting the action of the Peierls mechanism. In t' zirconia, the switching of tetragonal domains was recorded during ferroelastic deformation. The same process was first observed for tetragonal precipitates in partially stabilized zirconia. In γ TiAl, at the temperature of the flow stress anomaly (about 650 °c), the so-called ordinary dislocations move in a viscous manner, in contrast to the room temperature behaviour, where glide seems to be controlled by localized obstacles. Over a wide temperature range in NiAl single crystals, moving dislocations show a discontinuous dependence of the curvature on the dislocation orientation, well agreeing with calculations of the line tension using anisotropic elasticity. Direct experimental proof of dislocation motion during plastic deformation of quasicrystals is first given for A1PdMn single quasicrystals. Dislocations smoothly move on planes orthogonal to threefold and fivefold directions.


1985 ◽  
Vol 19 (3) ◽  
pp. 337-340 ◽  
Author(s):  
Joe King ◽  
Bob Block

Author(s):  
E. R. Kimmel ◽  
H. L. Anthony ◽  
W. Scheithauer

The strengthening effect at high temperature produced by a dispersed oxide phase in a metal matrix is seemingly dependent on at least two major contributors: oxide particle size and spatial distribution, and stability of the worked microstructure. These two are strongly interrelated. The stability of the microstructure is produced by polygonization of the worked structure forming low angle cell boundaries which become anchored by the dispersed oxide particles. The effect of the particles on strength is therefore twofold, in that they stabilize the worked microstructure and also hinder dislocation motion during loading.


1999 ◽  
Vol 96 (9) ◽  
pp. 1335-1339 ◽  
Author(s):  
ALAN E. VAN GIESSEN, DIRK JAN BUKMAN, B.

1981 ◽  
Vol 42 (C5) ◽  
pp. C5-67-C5-72
Author(s):  
S. Okuda ◽  
H. Mizubayashi ◽  
N. Kuramochi ◽  
S. Amano ◽  
M. Shimada ◽  
...  

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