Theoretical and experimental molecular beam angular distribution studies for gas injection in ultra-high vacuum

2009 ◽  
Vol 311 (7) ◽  
pp. 1640-1645 ◽  
Author(s):  
L. Isnard ◽  
R. Arès
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.


1978 ◽  
Vol 45 ◽  
pp. 287-291 ◽  
Author(s):  
Y. Shiraki ◽  
Y. Katayama ◽  
K.L.I. Kobayashi ◽  
K.F. Komatsubara

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.


2004 ◽  
Vol 16 (33) ◽  
pp. S3451-S3458 ◽  
Author(s):  
R Macovez ◽  
C Cepek ◽  
M Sancrotti ◽  
A Goldoni ◽  
L Petaccia ◽  
...  

2002 ◽  
Vol 715 ◽  
Author(s):  
D. J. Lockwood ◽  
J.-M. Baribeau ◽  
M. Noël ◽  
J. C. Zwinkels ◽  
B. J. Fogal ◽  
...  

AbstractWe produce a novel form of amorphous silicon through ultra-high-vacuum molecular beam epitaxy. By depositing silicon atoms onto a fused quartz substrate at temperatures between 98 and 335°C, we obtain a silicon-based material that lacks the characteristic periodicity of crystalline silicon but nevertheless has 98% of its density. The impurity content of this material is studied through infrared and secondary ion mass spectroscopies. The primary impurity found is oxygen, with hydrogen and carbon atoms also being found at trace levels. The Raman spectra of the amorphous silicon films are measured and the results, as they relate to the presence of disorder, are interpreted. We also use this molecular beam epitaxy method to fabricate a number of amorphous silicon superlattices, comprised of thin layers of amorphous silicon separated with even thinner layers of SiO2. The optical properties of the films and superlattices are contrasted.


2019 ◽  
Vol 4 (1) ◽  
pp. 29 ◽  
Author(s):  
Maren Hellwig ◽  
Martin Köppen ◽  
Albert Hiller ◽  
Hans Koslowski ◽  
Andrey Litnovsky ◽  
...  

The effect of surface roughness on angular distributions of reflected and physically sputtered particles is investigated by ultra-high vacuum (UHV) ion-surface interaction experiments. For this purpose, a smooth (R a = 5.9 nm) and a rough (R a = 20.5 nm) tungsten (W) surface were bombarded with carbon ions 13C+ under incidence angles of 30 ∘ and 80 ∘ . Reflected and sputtered particles were collected on foils to measure the resulting angular distribution as a function of surface morphology. For the qualitative and quantitative analysis, secondary ion mass spectrometry (SIMS) and nuclear reaction analysis (NRA) were performed. Simulations of ion-surface interactions were carried out with the SDTrimSP (Static Dynamic Transport of Ions in Matter Sputtering) code. For rough surfaces, a special routine was derived and implemented. Experimental as well as calculated results prove a significant impact of surface roughness on the angular distribution of reflected and sputtered particles. It is demonstrated that the effective sticking of C on W is a function of the angle of incidence and surface morphology. It is found that the predominant ion-surface interaction process changes with fluence.


1998 ◽  
Vol 9 (1-4) ◽  
pp. 437-444 ◽  
Author(s):  
R. Tubino ◽  
A. Borghesi ◽  
L. Dalla Bella ◽  
S. Destri ◽  
W. Porzio ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (107) ◽  
pp. 87818-87830 ◽  
Author(s):  
S. S. Kushvaha ◽  
M. Senthil Kumar ◽  
A. K. Shukla ◽  
B. S. Yadav ◽  
Dilip K. Singh ◽  
...  

We have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient.


Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 317-320
Author(s):  
Hyun-Chul KO ◽  
Doo-Cheol PARK ◽  
Yoichi KAWAKAMI ◽  
Shizuo FUJITA ◽  
Shigeo FUJITA

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