Electronic structure and binding energy of the icosahedral boron cluster b12†

1981 ◽  
Vol 42 (11) ◽  
pp. 1023-1025 ◽  
Author(s):  
G. Bambakidis ◽  
R.P. Wagner
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Boron Cluster

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

scholarly journals Simulations of Defect-Interface Interactions in GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 287-293
Author(s):  
J. A. Chisholm ◽  
P. D. Bristowe
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Point Defects ◽  
Potential Model ◽  
Pair Potential ◽  
Planar Defects ◽  
Native Defects ◽  
Native Point Defects ◽  
Bulk Gan ◽  
Image Position

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.

scholarly journals Relative stability of planar clusters B11, B12, and B13 in neutral- and charged-states

2019 ◽  
Vol 2 (2) ◽  
Author(s):  
Levan Chkhartishvili
Keyword(s):  
Binding Energy ◽  
Relative Stability ◽  
Energy Criterion ◽  
Nanostructured Coating ◽  
Neutron Absorption ◽  
Coating Materials ◽  
Boron Cluster ◽  
Boron Clusters ◽  
Planar Structures ◽  
Electromagnetic Radiations

Theoretically, within the diatomic model, there is studied the relative stability of most abundant boron clusters B11, B12, and B13 with planar structures in neutral, positively and negatively charge-states. According to the specific (pet atom) binding energy criterion, B12+ (6.49 eV) is found to be the most stable boron cluster, while B11– + B13+ (5.83 eV) neutral pair is expected to present the preferable ablation channel for boron-rich solids. Obtained results would be applicable in production of boron-clusters-based nanostructured coating materials with super-properties such as lightness, hardness, conductivity, chemically inertness, neutron-absorption, etc. making them especially effective for protection against cracking, wear, corrosion, neutron- and electromagnetic-radiations, etc.

POSSIBLE EVIDENCE FOR A VALENCE BAND SATELLITE IN PHOTOEMISSION SPECTRA FROM Sc(0001)

1994 ◽  
Vol 01 (04) ◽  
pp. 649-653 ◽  
Author(s):  
A.J. PATCHETT ◽  
S.S. DHESI ◽  
R.I.R. BLYTH ◽  
S.D. BARRETT
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Binding Energy ◽  
Single Crystals ◽  
Valence Band ◽  
Ground State ◽  
Rare Earth Metals ◽  
Final State ◽  
Bulk Single Crystals ◽  
The Creation

An intense photoemission feature is observed at a binding energy of ~10 eV in the UV photoemission spectra from the (0001) surfaces of bulk single crystals of rare-earth metals. This emission cannot be explained in terms of ground state electronic structure and we have been unable to attribute its existence to the presence of contamination of the surface. We present some evidence that may indicate its origin lies in the creation, by the photoemission process, of a metastable two-hole final state.

Electronic structure and binding energy relaxation of ScZr atomic alloying

2016 ◽  
Vol 657 ◽  
pp. 177-183
Author(s):  
Maolin Bo ◽  
Yongling Guo ◽  
Xuexian Yang ◽  
Junjie He ◽  
Yonghui Liu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Energy Relaxation

SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Electron Diffraction ◽  
Band Structure ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Valence Band Structure ◽  
X Ray ◽  
Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

scholarly journals Electronic Structure and Binding Energy of Spherical Quantum Dot

2017 ◽  
Vol 1 (1) ◽  
pp. 41-50
Author(s):  
Fatma Yilmazer ◽  
Yusuf Yakar ◽  
Bekir Cakir ◽  
Ayhan Ozmen
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Quantum Dot ◽  
Spherical Quantum Dot

scholarly journals Relative stability of planar clusters B11, B12, and B13 in neutral- and charged-states

2018 ◽  
Author(s):  
Levan Chkhartishvili
Keyword(s):  
Binding Energy ◽  
Relative Stability ◽  
Energy Criterion ◽  
Nanostructured Coating ◽  
Neutron Absorption ◽  
Coating Materials ◽  
Boron Cluster ◽  
Boron Clusters ◽  
Planar Structures ◽  
Electromagnetic Radiations

Theoretically, within the diatomic model, there is studied the relative stability of most abundant boron clusters B11, B12, and B13 with planar structures in neutral, positively and negatively charge-states. According to the specific (pet atom) binding energy criterion, B12+ (6.49 eV) is found to be the most stable boron cluster, while B11– + B13+ (5.83 eV) neutral pair is expected to present the preferable ablation channel for boron-rich solids. Obtained results would be applicable in production of boron-clusters-based nanostructured coating materials with super-properties such as lightness, hardness, conductivity, chemically inertness, neutron-absorption, etc. making them especially effective for protection against cracking, wear, corrosion, neutron- and electromagnetic-radiations, etc.

ANGLE-RESOLVED PHOTOEMISSION STUDIES OF THE 3C–SiC(001)(2×1) SURFACE

1999 ◽  
Vol 06 (06) ◽  
pp. 1151-1157 ◽  
Author(s):  
L. DUDA ◽  
L. S. O. JOHANSSON ◽  
B. REIHL ◽  
H. W. YEOM ◽  
S. HARA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Synchrotron Radiation ◽  
Binding Energy ◽  
Brillouin Zone ◽  
Surface State ◽  
Electronic States ◽  
Dangling Bond ◽  
Poor Agreement ◽  
Bond State ◽  
Surface Brillouin Zone

We have investigated the electronic structure of the single-domain 3C–SiC(001)(2×1) using angle-resolved photoemission and synchrotron radiation. Two different surface-state bands are clearly identified within the bulk bandgap. The upper band has a binding energy of 1.4 eV at the center of the surface Brillouin zone (SBZ) and shows a weak dispersion of 0.3 eV in the [Formula: see text] direction, but is nondispersive in the perpendicular direction. It has a polarization dependence suggesting a pz character, as expected for a Si dangling-bond state. The second band is located at 2.4 eV binding energy and is nondispersive. The weak or nonexistent dispersions suggest very localized electronic states at the surface and show poor agreement with calculated dispersions for the proposed models for the 2×1 and c(4×2) reconstructions.

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