Electronic structure and binding energy relaxation of ScZr atomic alloying

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

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Simulations of Defect-Interface Interactions in GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004403 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 287-293

Author(s):

J. A. Chisholm ◽

P. D. Bristowe

Keyword(s):

Electronic Structure ◽

Binding Energy ◽

Point Defects ◽

Potential Model ◽

Pair Potential ◽

Planar Defects ◽

Native Defects ◽

Native Point Defects ◽

Bulk Gan ◽

Image Position

We report on the interaction of native point defects with commonly observed planar defects in GaN. Using a pair potential model we find a positive binding energy for all native defects to the three boundary structures investigated indicating a preference for native defects to form in these interfaces. The binding energy is highest for the Ga interstitial and lowest for vacancies. Interstitials, which are not thought to occur in significant concentrations in bulk GaN, should form in the (11 0) IDB and the (10 0) SMB and consequently alter the electronic structure of these boundaries.

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POSSIBLE EVIDENCE FOR A VALENCE BAND SATELLITE IN PHOTOEMISSION SPECTRA FROM Sc(0001)

Surface Review and Letters ◽

10.1142/s0218625x94000862 ◽

1994 ◽

Vol 01 (04) ◽

pp. 649-653 ◽

Cited By ~ 1

Author(s):

A.J. PATCHETT ◽

S.S. DHESI ◽

R.I.R. BLYTH ◽

S.D. BARRETT

Keyword(s):

Electronic Structure ◽

Rare Earth ◽

Binding Energy ◽

Single Crystals ◽

Valence Band ◽

Ground State ◽

Rare Earth Metals ◽

Final State ◽

Bulk Single Crystals ◽

The Creation

An intense photoemission feature is observed at a binding energy of ~10 eV in the UV photoemission spectra from the (0001) surfaces of bulk single crystals of rare-earth metals. This emission cannot be explained in terms of ground state electronic structure and we have been unable to attribute its existence to the presence of contamination of the surface. We present some evidence that may indicate its origin lies in the creation, by the photoemission process, of a metastable two-hole final state.

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SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

Surface Review and Letters ◽

10.1142/s0218625x04006013 ◽

2004 ◽

Vol 11 (02) ◽

pp. 191-198 ◽

Cited By ~ 32

Author(s):

V. V. ATUCHIN ◽

L. D. POKROVSKY ◽

V. G. KESLER ◽

N. YU. MAKLAKOVA ◽

V. I. VORONKOVA ◽

...

Keyword(s):

Electronic Structure ◽

Binding Energy ◽

Electron Diffraction ◽

Band Structure ◽

High Energy ◽

Photoemission Spectroscopy ◽

High Energy Electron ◽

Valence Band Structure ◽

X Ray ◽

Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

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The electronic structure and binding energy of 5d transition atoms adsorbed on tungsten

Journal of Physics F Metal Physics ◽

10.1088/0305-4608/1/1/102 ◽

1971 ◽

Vol 1 (1) ◽

pp. L4-L6 ◽

Cited By ~ 14

Author(s):

T B Grimley ◽

B J Thorpe

Keyword(s):

Electronic Structure ◽

Binding Energy

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Electronic Structure and Binding Energy of Spherical Quantum Dot

Aksaray University Journal of Science and Engineering ◽

10.29002/asujse.302748 ◽

2017 ◽

Vol 1 (1) ◽

pp. 41-50

Author(s):

Fatma Yilmazer ◽

Yusuf Yakar ◽

Bekir Cakir ◽

Ayhan Ozmen

Keyword(s):

Electronic Structure ◽

Binding Energy ◽

Quantum Dot ◽

Spherical Quantum Dot

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ANGLE-RESOLVED PHOTOEMISSION STUDIES OF THE 3C–SiC(001)(2×1) SURFACE

Surface Review and Letters ◽

10.1142/s0218625x9900127x ◽

1999 ◽

Vol 06 (06) ◽

pp. 1151-1157 ◽

Cited By ~ 2

Author(s):

L. DUDA ◽

L. S. O. JOHANSSON ◽

B. REIHL ◽

H. W. YEOM ◽

S. HARA ◽

...

Keyword(s):

Electronic Structure ◽

Synchrotron Radiation ◽

Binding Energy ◽

Brillouin Zone ◽

Surface State ◽

Electronic States ◽

Dangling Bond ◽

Poor Agreement ◽

Bond State ◽

Surface Brillouin Zone

We have investigated the electronic structure of the single-domain 3C–SiC(001)(2×1) using angle-resolved photoemission and synchrotron radiation. Two different surface-state bands are clearly identified within the bulk bandgap. The upper band has a binding energy of 1.4 eV at the center of the surface Brillouin zone (SBZ) and shows a weak dispersion of 0.3 eV in the [Formula: see text] direction, but is nondispersive in the perpendicular direction. It has a polarization dependence suggesting a pz character, as expected for a Si dangling-bond state. The second band is located at 2.4 eV binding energy and is nondispersive. The weak or nonexistent dispersions suggest very localized electronic states at the surface and show poor agreement with calculated dispersions for the proposed models for the 2×1 and c(4×2) reconstructions.

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