Self-consistent numerical solutions of p-type inversion layers in silicon mos devices

1976 ◽  
Vol 18 (8) ◽  
pp. 1021-1023 ◽  
Author(s):  
N. Garcia
Keyword(s):  
Numerical Solutions ◽  
Mos Devices ◽  
Self Consistent ◽  
P Type

scholarly journals Numerical Boundary Conditions for Solar Magnetic Hydrodynamic Flows Using the Method of Characteristics

1996 ◽  
Vol 154 ◽  
pp. 149-153
Author(s):  
S. T. Wu ◽  
A. H. Wang ◽  
W. P. Guo
Keyword(s):  
Boundary Conditions ◽  
Method Of Characteristics ◽  
Numerical Solutions ◽  
The Self ◽  
Time Dependent ◽  
Solar Plasma ◽  
The Method Of Characteristics ◽  
Mhd Simulations ◽  
Self Consistent ◽  
Dynamic Structures

AbstractWe discuss the self-consistent time-dependent numerical boundary conditions on the basis of theory of characteristics for magnetohydrodynamics (MHD) simulations of solar plasma flows. The importance of using self-consistent boundary conditions is demonstrated by using an example of modeling coronal dynamic structures. This example demonstrates that the self-consistent boundary conditions assure the correctness of the numerical solutions. Otherwise, erroneous numerical solutions will appear.

scholarly journals A self-consistent hybrid model of kinetic striations in low-current Argon discharges

2022 ◽  
Author(s):  
Vladimir Kolobov ◽  
Juan Alonso Guzmán ◽  
R R Arslanbekov
Keyword(s):  
Kinetic Equation ◽  
Hybrid Model ◽  
Noble Gases ◽  
Numerical Solutions ◽  
Penning Ionization ◽  
Poisson Solver ◽  
Glow Discharges ◽  
Self Consistent ◽  
Ionization Model ◽  
Positive Column Plasma

Abstract A self-consistent hybrid model of standing and moving striations was developed for low-current DC discharges in noble gases. We introduced the concept of surface diffusion in phase space (r,u) (where u denotes the electron kinetic energy) described by a tensor diffusion in the nonlocal Fokker-Planck kinetic equation for electrons in the collisional plasma. Electrons diffuse along surfaces of constant total energy ε=u-eφ(r) between energy jumps in inelastic collisions with atoms. Numerical solutions of the 1d1u kinetic equation for electrons were obtained by two methods and coupled to ion transport and Poisson solver. We studied the dynamics of striation formation in Townsend and glow discharges in Argon gas at low discharge currents using a two-level excitation-ionization model and a “full-chemistry” model, which includes stepwise and Penning ionization. Standing striations appeared in Townsend and glow discharges at low currents, and moving striations were obtained for the discharge currents exceeding a critical value. These waves originate at the anode and propagate towards the cathode. We have seen two types of moving striations with the 2-level and full-chemistry models, which resemble the s and p striations previously observed in the experiments. Simulations indicate that processes in the anode region could control moving striations in the positive column plasma. The developed model helps clarify the nature of standing and moving striations in DC discharges of noble gases at low discharge currents and low gas pressures.

On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1007-1010 ◽  
Author(s):  
Daniel B. Habersat ◽  
Aivars J. Lelis ◽  
G. Lopez ◽  
J.M. McGarrity ◽  
F. Barry McLean
Keyword(s):  
Room Temperature ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Interface Charges ◽  
Flatband Voltage ◽  
Oxide Traps ◽  
P Type

We have investigated the distribution of oxide traps and interface traps in 4H Silicon Carbide MOS devices. The density of interface traps, Dit, was characterized using standard C-V techniques on capacitors and charge pumping on MOSFETs. The number of oxide traps, NOT, was then calculated by measuring the flatband voltage VFB in p-type MOS capacitors. The amount that the measured flatband voltage shifts from ideal, minus the contributions due to the number of filled interface traps Nit, gives an estimate for the number of oxide charges present. We found Dit to be in the low 1011cm−2eV−1 range in midgap and approaching 1012 −1013cm−2eV−1 near the band edges. This corresponds to an Nit of roughly 2.5 ⋅1011cm−2 for a typical capacitor in flatband at room temperature. This data combined with measurements of VFB indicates the presence of roughly 1.3 ⋅1012cm−2 positive NOT charges in the oxide near the interface for our samples.

Formation of a self-consistent double quantum well in a wide p-type quantum well

2004 ◽  
Vol 30 (11) ◽  
pp. 871-873
Author(s):  
G. A. Alshanskiı̆ ◽  
M. V. Yakunin
Keyword(s):  
Quantum Well ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Self Consistent ◽  
P Type

Self-consistent estimates for the viscoelastic creep compliances of composite materials

1978 ◽  
Vol 359 (1697) ◽  
pp. 251-273 ◽  
Keyword(s):  
Composite Materials ◽  
Numerical Solutions ◽  
The Self ◽  
Inclusion Problem ◽  
Inclusion Problems ◽  
Viscoelastic Creep ◽  
Self Consistent ◽  
Title Problem ◽  
Consistent Method ◽  
Selection Of

In this paper the viscoelastic creep compliances of various composites are estimated by the self-consistent method. The phases may be arbitrarily anisotropic and in any concentrations but we demand that one of the phases be a matrix and the remaining phases consist of ellipsoidal inclusions. The theory is succinctly formulated with the help of Stieltjes convolutions. In order to solve the title problem, we first solve the misfitting viscoelastic inclusion problem. Numerical solutions are given for a selection of inclusion problems and for two common composite materials, namely an isotropic dispersion of spheres, and a uni-directional fibre reinforced material.

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