Determination of the scattering mechanisms in p-type semiconductors of the III–V group: The case of Zn-doped GaP and natural (undoped) GaSb

1988 ◽  
Vol 67 (6) ◽  
pp. 651-655 ◽  
Author(s):  
C.D. Kourkoutas ◽  
G.J. Papaioannou ◽  
P.C. Euthymiou ◽  
G.E. Zardas
Keyword(s):  
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.


AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  

2021 ◽  
Vol 864 ◽  
pp. 158895
Author(s):  
F. Sonmez ◽  
E. Arslan ◽  
S. Ardali ◽  
E. Tiras ◽  
E. Ozbay

2005 ◽  
Vol 108-109 ◽  
pp. 643-648 ◽  
Author(s):  
Marko Yli-Koski ◽  
Hele Savin ◽  
E. Saarnilehto ◽  
Antti Haarahiltunen ◽  
Juha Sinkkonen ◽  
...  

We compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.


2004 ◽  
Vol 4 (4) ◽  
pp. 143-154 ◽  
Author(s):  
R. Appleyard ◽  
K. Ball ◽  
F. E. Hughes ◽  
W. Kilby ◽  
R. Nicholls ◽  
...  

Purpose: Having previously reviewed the implementation of systematic in vivo dosimetry at the Norfolk and Norwich Hospital this paper examines the results of entrance dose measurements for specific sites/techniques and determines whether different action/alert protocols are required for these different categories.Methods and materials: Entrance dose measurements using p-type diodes were analysed for the following treatment categories: Breast, head and neck in beam direction shell, abdomino-pelvic and intrathoracic. A 4% tolerance was applied.Results: Mean deviations from expected dose and proportion of measurements exceeding tolerance were: Breast: +1.15%±3.04% (1SD), 238/1073≥4%; Head and neck: +0.35%±2.20% (1SD), 21/326≥4%; Abdomino-pelvic: +0.52%±2.75% (1SD), 93/712≥4%; Intrathoracic: −0.01%±2.75% (1SD), 22/119≥4%. Significant improvements in results for breast patients were noted following the introduction of a commercial breast board. The results for abdomino-pelvic patients confirmed a substantial variation in diode response under short FSD, wedged fields at 16MV (that had not been corrected for). The statistical uncertainty in dose measurement for each treatment category was calculated in order to assist determination of appropriate tolerance levels.Conclusions: A blanket tolerance of 4% was generally too low given the extent of measurement uncertainty. The relatively high number of readings outside tolerance where identification of errors was difficult/impossible resulted in inconsistent application of the action protocol. Some widening of tolerances is likely to improve quality of procedure and treatment. Appropriate action levels are recommended for each treatment category.


2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.


Author(s):  
A. Agrawal ◽  
A. Ali ◽  
R. Misra ◽  
P. E. Schiffer ◽  
B. R. Bennett ◽  
...  

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.


2017 ◽  
Vol 38 (4) ◽  
pp. 481-484 ◽  
Author(s):  
Hee-Joong Kim ◽  
Dae-Hwan Kim ◽  
Chan-Yong Jeong ◽  
Jeong-Hwan Lee ◽  
Hyuck-In Kwon
Keyword(s):  

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