Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 647 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

AbstractBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

Effects Of Damage-Impurity Interaction On Electrical Properties of Se+-Implanted GaAs

1980 ◽  
Vol 2 ◽  
Author(s):  
D. K. Sadana ◽  
J. Washburn ◽  
M. D. Strathman ◽  
G. R. Booker ◽  
M. H. Badawi
Keyword(s):  
Electron Microscopy ◽  
Point Defects ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Atomic Concentration ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron ◽  
Impurity Interaction ◽  
Secondary Ion

ABSTRACTInteraction of impurities with the “visible defects” in hot implanted Cr doped semi-insulating (100) GaAs has been investigated. The defects studies were performed using transmission electron microscopy (TEM) and MeV He+ channeled Rutherford backscattering. The defects distribution was obtained by 90° cross-sectional TEM (XTEM). The atomic concentration profiles of Se, and carrier-concentration and mobility profiles were obtained by secondary ion mass spectrometry (SIMS) and Hall measurements in conjunction with chemical stopping, respectively. Comparison of defects, atomic and electrical profiles, showed the formation of secondary defects at and beyond the projected range (Rp), a significant amount of Se+ diffusion beyond Rp, and compensation of electrical carriers caused mainly by the point defects present in hot implanted GaAs.

Point Defect Supersaturation During Zinc Diffusion into InP

1995 ◽  
Vol 378 ◽  
Author(s):  
D. Wittorf ◽  
W. Jäger ◽  
A. Rucki ◽  
K. Urban ◽  
H.-G. Hettwer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Defect Formation ◽  
Secondary Ion Mass Spectrometry ◽  
Concentration Profiles ◽  
Zn Diffusion ◽  
Transmission Electron ◽  
Zn Concentration ◽  
Zinc Diffusion ◽  
Secondary Ion

AbstractFormation of defects during Zn diffusion into undoped and Fe-doped InP single crystals at 700°C has been observed by transmission electron microscopy for various diffusion conditions. The observations are correlated with Zn concentration profiles obtained by electron microprobe measurements and secondary-ion mass spectrometry. The results allow the conclusion that indiffusing interstitial Zn can occupy In sublattice sites via a kick-out reaction. Under appropriate diffusion conditions supersaturations of In self-interstitial atoms result leading to defect formation. Observations in Fe-doped InP suggest that Zn also replaces Fe on In sublattice sites leading to redistribution and to precipitation of Fe.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

scholarly journals Microstructure and Thermal Stability of Transition Metal Nitrides and Borides on GaN

2000 ◽  
Vol 622 ◽  
Author(s):  
Jacek Jasiński ◽  
Eliana Kamińska ◽  
Anna Piotrowska ◽  
Adam Barcz ◽  
Marcin Zieliński
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Thermal Stability ◽  
Contact Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Metal Nitrides ◽  
Transition Metal Nitrides ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Thermal Stability Of

ABSTRACTMicrostructure and thermal stability of ZrN/ZrB2 bilayer deposited on GaN have been studied using transmission electron microscopy methods (TEM) and secondary ion mass spectrometry (SIMS). It has been demonstrated that annealing of the contact structure at 1100°C in N2 atmosphere does not lead to any observable metal/semiconductor interaction. In contrast, a failure of the integrity of ZrN/ZrB2 metallization at 800°C, when the heat treatment is performed in O2 ambient has been observed.

Sign in / Sign up

Export Citation Format

Share Document