Model for Al Etch-Rate Enhancement at Low Temperatures

1993 ◽  
Vol 32 (Part 1, No. 12B) ◽  
pp. 6095-6101 ◽  
Author(s):  
Takashi Uchida ◽  
Hidemitsu Aoki ◽  
Masami Hane ◽  
Shinya Hasegawa ◽  
Eiji Ikawa
Keyword(s):  
Low Temperatures ◽  
Etch Rate ◽  
Rate Enhancement

Etch rate enhancement of photoresist in nitrogen‐containing plasmas

1989 ◽  
Vol 55 (24) ◽  
pp. 2488-2490 ◽  
Author(s):  
V. Premachandran
Keyword(s):  
Etch Rate ◽  
Rate Enhancement

scholarly journals Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow Luminescence

1999 ◽  
Vol 4 (S1) ◽  
pp. 914-919 ◽  
Author(s):  
J. T. Hsieh ◽  
J. M. Hwang ◽  
H. L. Hwang ◽  
W. H. Hung
Keyword(s):  
Surface Morphology ◽  
Root Mean Square ◽  
Low Temperatures ◽  
Etch Rate ◽  
Root Mean Square Roughness ◽  
Mean Square ◽  
Photoluminescence Spectra ◽  
Yellow Luminescence ◽  
Etching Technique ◽  
193 Nm

Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

Silicon etch rate enhancement by traces of metal

1999 ◽  
Vol 17 (3) ◽  
pp. 755-762 ◽  
Author(s):  
P. G. M. Sebel ◽  
L. J. F. Hermans ◽  
H. C. W. Beijerinck
Keyword(s):  
Etch Rate ◽  
Rate Enhancement

scholarly journals Fabrication of Silicon Microtips with Integrated Electrodes

2008 ◽  
Vol 3 (2) ◽  
pp. 97-103
Author(s):  
Murilo Z. Mielli ◽  
Alex L. Barros ◽  
Alexandre T. Lopes ◽  
Marcelo Carreño
Keyword(s):  
Structural Material ◽  
Formation Process ◽  
Low Temperatures ◽  
Etch Rate ◽  
Electron Field Emission ◽  
Mechanical Support ◽  
Electronic Microscopy ◽  
Metallic Electrode ◽  
Simple Method ◽  
Electron Field

This paper describes a simple method to fabricate silicon microtips with integrated self-aligned polarization electrodes for development of MEMS and electron field emission devices. The method is based on the wet bulk micromachining of the silicon substrate in KOH solutions and utilizes low stress PECVD SiOxNy films obtained at low temperatures (320°C) as structural material for both mechanical support and electrical insulation of the electrodes. For the electrodes sputtered Cr films were utilized. The microtip formation process was studied by optical and electronic microscopy to analyze tip geometry and the characteristic etch rate of the different stages during the tips formation. The fabricated devices were matrixes with different numbers of microtips, each with a typical height of 52 μm and with diameter at the apex below 1 μm. In the best case, the distance between the apex of the tips and the metallic electrode was lower than 5 μm. The results also show that the low stress SiOxNy film is essential to attain the necessary flatness required by the process.

GaAs Etch Rate Enhancement with SF[sub 6] Addition to BCl[sub 3] Plasmas

2000 ◽  
Vol 147 (10) ◽  
pp. 3850 ◽  
Author(s):  
K. J. Nordheden ◽  
K. Upadhyaya ◽  
Y. -S. Lee ◽  
S. P. Gogineni ◽  
M. -Y. Kao
Keyword(s):  
Etch Rate ◽  
Rate Enhancement

Condensed Chlorine Etching of GaAs Induced by Excimer Laser Radiation

1991 ◽  
Vol 236 ◽  
Author(s):  
M.B. Freiler ◽  
Ming Chang Shih ◽  
G. Haase ◽  
R. Scarmozzino ◽  
R.M. Osgood
Keyword(s):  
Laser Radiation ◽  
Excimer Laser ◽  
Low Temperatures ◽  
Etch Rate ◽  
Anisotropic Etching ◽  
System Parameters ◽  
Etching Mechanism ◽  
Excimer Laser Radiation ◽  
Laser Induced Etching

AbstractWe report excimer laser induced etching of GaAs samples covered with a layer of condensed Cl2. The experiments were performed at low temperatures (120-150 K) and in a chlorine ambient (PC12=1-40 mTorr). Spatially well-resolved, anisotropic etching has been demonstrated with an observed etch rate of 0.25 Å/pulse (0.1 μm/min for typical parameters). The etch rate is characterized as a function of the various system parameters (pressure, temperature, laser rep-rate, etc.), and a model is proposed to describe the etching mechanism.

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