X-ray photoelectron spectroscopy analysis of the growth kinetics of Ge on Si(001)

1994 ◽  
Vol 252 (2) ◽  
pp. 98-104 ◽  
Author(s):  
Eliezer D. Richmond
1999 ◽  
Vol 06 (06) ◽  
pp. 1053-1060 ◽  
Author(s):  
N. TABET ◽  
J. AL-SADAH ◽  
M. SALIM

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.


2010 ◽  
Vol 256 (23) ◽  
pp. 7178-7185 ◽  
Author(s):  
K. McLeod ◽  
S. Kumar ◽  
N.K. Dutta ◽  
R.St.C. Smart ◽  
N.H. Voelcker ◽  
...  

1996 ◽  
Vol 35 (Part 2, No. 12B) ◽  
pp. L1710-L1713 ◽  
Author(s):  
Takao Ishida ◽  
Naoki Nishida ◽  
Satoshi Tsuneda ◽  
Masahiko Hara ◽  
Hiroyuki Sasabe ◽  
...  

2017 ◽  
Vol 31 (5) ◽  
pp. 657-667 ◽  
Author(s):  
S Varnagiris ◽  
S Tuckute ◽  
M Lelis ◽  
D Milcius

Currently, polymeric insulation materials are widely used for energy saving in buildings. Despite of all benefits, these materials are generally sensitive to heat and highly flammable. This work discusses possibility to improve heat resistance of expanded polystyrene (EPS) foam using thin silicon dioxide (SiO2) films deposited by magnetron sputtering technique. In order to increase surface energy and adherence of SiO2 thin films to substrate EPS was plasma pretreated before films’ depositions using pulsed DC plasma generator for 40 s in argon gas. SiO2 formation was done in reactive argon and oxygen gas atmosphere. Laboratory made equipment was used for flame torch–induced heat resistance experiments. Results showed that silicon oxide films remains stable during heat resistance experiments up to 5 s and fully protects polystyrene (PS) substrate. Films are relatively stable for 30 s and 60 s and partially protect PS from melting and ignition. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy analysis confirmed that SiO2 layer, which is distributed uniformly on the EPS surface, could work as a good heat resistant material.


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