The effect of applied voltage on the cathodic electrodeposition process

The model of organic film growth on a cathode during electrodeposition process proposes the current density-time and film thickness-time relationships and enables the evaluation of the rate contents for the electrochemical reaction of OH? ion evolution and for the chemical reaction of organic film deposition. The dependencies of film thickness and rate constants on the applied voltage, bath temperature and resin concentration in the electrodeposition bath have also been obtained. The deposition parameters have a great effect on the cathodic electrodeposition process and on the protective properties of the obtained electrodeposited coatings. From the time dependencies of the pore resistance, coating capacitance and relative permittivity, obtained from impedance measurements, the effect of applied voltage, bath temperature and resin concentration on the protective properties of electrodeposited coatings has been shown. Using electrochemical impedance spectroscopy, thermogravimetric analysis gravimetric liquid sorption experiments, differential scanning calorimetry and optical miscroscopy, the corrosion stability of epoxy coatings was investigated. A mechanism for the penetration of electrolyte through an organic coating has been suggested and the shape and dimensions of the conducting macropores have been determined. It was shown that conduction through a coating depends only on the conduction through the macropores although the quantity of electrolyte in the micropores of the polymer net is about one order of magnitude greater than that inside the conducting macropores.

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Electrodeposition of CuI Thin Film for Perovskite Solar Cells

Materials Science Forum ◽

10.4028/www.scientific.net/msf.979.180 ◽

2020 ◽

Vol 979 ◽

pp. 180-184

Author(s):

I. Karuppusamy ◽

K. Ramachandran ◽

S. Karuppuchamy

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Applied Voltage ◽

Perovskite Solar Cells ◽

Face Centered Cubic ◽

Applied Potential ◽

Cathodic Electrodeposition ◽

Cubic Structure ◽

Face Centered

The CuI thin film has been successfully prepared by using cathodic electrodeposition method. The synthesized film was characterized using advanced techniques such as XRD, SEM-EDX and UV measurements. The films are crystallized in face centered cubic structure. The crystallinity is increasing for the applied potential of-0.3 V and the crystallinity deteriorates on increasing the potential above - 0.3 V. It was also observed that the applied voltage plays an important role. Homogeneously distributed triangular faceted morphology was observed from SEM. This is consistent with the result of XRD that electrodeposited CuI thin films grow preferential orientation along the (111) crystal plane.

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Effect of Electrodeposition Potential on Composition of CuIn1−xGaxSe2Absorber Layer for Solar Cell by One-Step Electrodeposition

International Journal of Photoenergy ◽

10.1155/2014/478428 ◽

2014 ◽

Vol 2014 ◽

pp. 1-8 ◽

Cited By ~ 1

Author(s):

Rui-Wei You ◽

Kar-Kit Lew ◽

Yen-Pei Fu

Keyword(s):

Thin Films ◽

Applied Voltage ◽

Annealing Treatment ◽

Deposition Potential ◽

Chalcopyrite Structure ◽

Second Phase ◽

Cathodic Electrodeposition ◽

Polycrystalline Thin Films ◽

Deposition Voltage ◽

One Step

CIGS polycrystalline thin films were successfully fabricated by one-step cathodic electrodeposition on Mo-coated glass. In this study, we applied a galvanometry mode with three-electrode potentiostatic systems to produce a constant concentration electroplating solution, which were composed of CuCl2, InCl3, GaCl3, and SeO2. Then these as-electrodeposited films were annealed in argon atmosphere and characterized by X-ray diffraction. The results revealed that annealing treatment significantly improved the crystallinity of electrodeposited films and formed CIGS chalcopyrite structure, but at low applied deposition voltage (−950 mV versus SCE) there appeared second phase. The cross-section morphology revealed that applied voltage at −1350 mV versus SCE has uniform deposition, and higher applied voltage made grain more unobvious. The deposition rate and current density are proportional to deposition potential, and hydrogen was generated apparently when applying potential beyond −1750 mV versus SCE. It was found that the CIGS compound did not match exact stoichiometry ofCu : In : Ga : Se =1 : x : 1-x : 2. This result suggests the possibility of controlling the property of thin films by varying the applied potential during electrodeposition.

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Preparation and Studies of Electrodeposited CuSe Thin Films

Eurasian Chemico-Technological Journal ◽

10.18321/ectj598 ◽

2017 ◽

Vol 6 (2) ◽

pp. 107

Author(s):

A. Kassim ◽

Z. Zainal ◽

N. Saravanan ◽

R. Vikneshwari ◽

S. Malathi

Keyword(s):

Deposition Time ◽

Sodium Dodecyl ◽

Linear Sweep Voltammetry ◽

Deposition Potential ◽

Sodium Thiosulphate ◽

Linear Sweep ◽

Electrodeposition Process ◽

X Ray ◽

Cathodic Electrodeposition ◽

Titanium Substrates

Cathodic electrodeposition in the presence of sodium dodecyl-sulphate in aqueous solution was used to prepare CuSe thin film deposited on titanium substrates. The effect of deposition potential, concentration<br />and deposition time were studied to determine the optimum condition for the electrodeposition process. The films were characterized by X-ray diffractrometry. Scanning electron microscopy was used to study<br />the morphology of the deposits. The photoresponse of the films prepared was analysed using linear sweep voltammetry in the presence of sodium thiosulphate.

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The kinetics of organic film growth during the cathodic electrodeposition process

Surface Technology ◽

10.1016/0376-4583(85)90098-6 ◽

1985 ◽

Vol 26 (4) ◽

pp. 353-360 ◽

Cited By ~ 9

Author(s):

V.B. Mišković ◽

M.D. Maksimović

Keyword(s):

Film Growth ◽

Organic Film ◽

Electrodeposition Process ◽

Cathodic Electrodeposition ◽

Kinetics Of

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STUDY OF THE STOICHIOMETRIC RATIO OF ONE-STEP ELECTRODEPOSITED CuInSe2 FILMS ON ITO/SODA-LIME GLASS

Surface Review and Letters ◽

10.1142/s0218625x08011548 ◽

2008 ◽

Vol 15 (04) ◽

pp. 419-426 ◽

Cited By ~ 2

Author(s):

N. J. YAO ◽

S. M. HUANG ◽

J. B. CHU ◽

H. B. ZHU ◽

Z. SUN ◽

...

Keyword(s):

Indium Tin Oxide ◽

Soda Lime ◽

Morphological Properties ◽

Chalcopyrite Structure ◽

Soda Lime Glass ◽

Stoichiometric Ratio ◽

Electrodeposition Process ◽

Cathodic Electrodeposition ◽

Copper Indium ◽

One Step

Copper indium diselenide ( CuInSe 2) thin films were grown on indium–tin oxide (ITO)/soda-lime glass using a one-step cathodic electrodeposition process at potentials lower than -0.6 V vs SCE, and in the presence of a large excess of In 3+. The source solution contained CuCl 2, InCl 3, and H 2 SeO 3 complexed by citric acid. The concentration of InCl 3 in the electrochemical bath affected the structure, composition, stoichiometric ratio, and morphological properties of electrodeposited films. CuInSe 2 films with a chalcopyrite structure and quite good stoichiometry were directly electrodeposited from a solution of 20 mM InCl 3, 5 mM CuCl 2, and 8 mM H 2 SeO 3. Annealing of these CuInSe 2 films in the temperature range from 300°C to 500°C improves their crystallinity and increases their grain size. Good chalcopyrite CuInSe 2 films with a (112) preferential orientation suitable for the production of efficient solar cells are obtained after annealing at 500°C. The formation mechanism of the ternary CuInSe 2 compound during the electrodeposition process was discussed.

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