STUDY OF THE STOICHIOMETRIC RATIO OF ONE-STEP ELECTRODEPOSITED CuInSe2 FILMS ON ITO/SODA-LIME GLASS

2008 ◽  
Vol 15 (04) ◽  
pp. 419-426 ◽  
Author(s):  
N. J. YAO ◽  
S. M. HUANG ◽  
J. B. CHU ◽  
H. B. ZHU ◽  
Z. SUN ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Soda Lime ◽  
Morphological Properties ◽  
Chalcopyrite Structure ◽  
Soda Lime Glass ◽  
Stoichiometric Ratio ◽  
Electrodeposition Process ◽  
Cathodic Electrodeposition ◽  
Copper Indium ◽  
One Step

Copper indium diselenide ( CuInSe 2) thin films were grown on indium–tin oxide (ITO)/soda-lime glass using a one-step cathodic electrodeposition process at potentials lower than -0.6 V vs SCE, and in the presence of a large excess of In 3+. The source solution contained CuCl 2, InCl 3, and H 2 SeO 3 complexed by citric acid. The concentration of InCl 3 in the electrochemical bath affected the structure, composition, stoichiometric ratio, and morphological properties of electrodeposited films. CuInSe 2 films with a chalcopyrite structure and quite good stoichiometry were directly electrodeposited from a solution of 20 mM InCl 3, 5 mM CuCl 2, and 8 mM H 2 SeO 3. Annealing of these CuInSe 2 films in the temperature range from 300°C to 500°C improves their crystallinity and increases their grain size. Good chalcopyrite CuInSe 2 films with a (112) preferential orientation suitable for the production of efficient solar cells are obtained after annealing at 500°C. The formation mechanism of the ternary CuInSe 2 compound during the electrodeposition process was discussed.

Fabrication and Properties of the Backlight Field Emission Unit with Meshy Bottom Electrode

2011 ◽  
Vol 204-210 ◽  
pp. 152-155
Author(s):  
Chao Wu ◽  
Wen Jie Zhang
Keyword(s):  
Field Emission ◽  
Indium Tin Oxide ◽  
Bottom Electrode ◽  
Soda Lime ◽  
Oxide Thin Film ◽  
Soda Lime Glass ◽  
Field Emission Properties ◽  
Manufacture Process ◽  
Substrate Plate ◽  
Photolithography Process

Carbon nanotubes (CNTs) had good field emission ability and were adopted to form the cold cathode. The backlight field emission unit (BFEU) with CNTs as field emitter was designed and fabricated, and the detailed manufacture process was also given. The flat soda-lime glass was used as substrate plate. With the photolithography process, the indium tin oxide thin film covered on the cathode plate surface was divided into bar stripes to form the meshy bottom electrode for improving the field emission properties of CNT emitters. The sealed BFEU demonstrated better field emission performance, high luminance brightness. With the simple fabrication process, the total manufacture cost was also low.

Characteristics of Perovskite Solar Cells with ZnGa2O4:Mn Phosphor Mixed Polyvinylidene Fluoride Down-Conversion Layer

2021 ◽  
Vol 16 (6) ◽  
pp. 855-860
Author(s):  
Ji Yong Hwang ◽  
II Tae Kim ◽  
Hyung Wook Choi
Keyword(s):  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Polyvinylidene Fluoride ◽  
Perovskite Solar Cells ◽  
Soda Lime ◽  
Perovskite Solar Cell ◽  
Transport Layer ◽  
Soda Lime Glass ◽  
Down Conversion

To reduce the manufacturing cost of perovskite solar cells, soda-lime glass and transparent conducting oxides such as indium tin oxide and fluorine-doped tin oxide are the most widely used substrates and lighttransmitting electrodes. However, the transmittance spectra of soda-lime glass, indium tin oxide, and fluorinedoped tin oxide show that all light near and below 330 nm is absorbed; thus, with the use of these substrates, light energy near and below 330 nm cannot reach the perovskite light-absorbing layer. It is expected that the overall solar cell can be improved if the wavelength can be adjusted to reach the perovskite solar cell absorbing layer through down-conversion of energy in the optical wavelength band. In this study, a polyvinylidene fluoride transparent film mixed with a ZnGa2O4:Mn phosphor was applied to the incident side of the perovskite solar cell with the intent to increase the light conversion efficiency without changing the internal bandgap energy and structure. By adding a phosphor layer to the external surface of PSC exposed to incident light, the efficiency of the cell was increased by the down-conversion of ultraviolet light (290 nm) to the visible region (509 nm) while maintaining the transmittance. To manufacture the perovskite solar cell, a TiO2-based mesoporous electron transport layer was spin-coated onto the substrate. The perovskite layer used in this experiment was CH3NH3PbI3 and was fabricated on a TiO2 layer. Spiro-OMeTAD solution was spin-coated as a hole-transport layer.

scholarly journals Characterization of MgO:Cd thin films grown by SILAR method

2018 ◽  
Vol 96 (7) ◽  
pp. 804-809 ◽  
Author(s):  
Harun Güney ◽  
Demet İskenderoğlu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Soda Lime ◽  
Morphological Properties ◽  
Emission Region ◽  
Soda Lime Glass ◽  
Silar Method ◽  
Soda Lime Glass Substrate ◽  
X Ray ◽  
Cd Doping

The undoped and 1%, 2%, and 3% Cd-doped MgO nanostructures were grown by SILAR method on the soda lime glass substrate. X-ray diffractometer (XRD), ultraviolet–visible spectrometer, scanning electron microscope, photoluminescence (PL), and X-ray photoelectron spectroscopy measurements were taken to investigate Cd doping effects on the structural, optical, and morphological properties of MgO nanostructures. XRD measurements show that the samples have cubic structure and planes of (200), (220) of MgO and (111), (200), and (220) of CdO. It was observed that band gaps increase with rising Cd doping rate in MgO thin film. The surface morphology of samples demonstrates that MgO nanostructures have been affected by the Cd doping. PL measurements show that undoped and Cd-doped MgO thin films can radiate in the visible emission region.

Effect of Substrate Temperature on One-Step Magnetron-Sputtered Cu(In,Ga)Se2 Thin Films for Solar Cells

2013 ◽  
Vol 291-294 ◽  
pp. 703-707
Author(s):  
Gui Shan Liu ◽  
Hao Na Li ◽  
Xiao Yue Shen ◽  
Zhi Qiang Hu ◽  
Hong Shun Hao
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Substrate Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Measurement Analysis ◽  
One Step ◽  
High Absorption Coefficient ◽  
Substrate Temperatures

CIGS thin films were deposited on soda lime glass by one-step magnetron sputtering using a single quaternary-CIGS target in stoichiometric proportions. The influences of substrate temperature on the structural, optical, and electrical properties of Cu(In,Ga)Se2 (CIGS) thin films were investigated. The phase structure of CIGS thin films was characterized by X-ray diffraction (XRD). The morphology and thickness of CIGS thin films were observed by Scanning Electron Microscope (SEM). The absorption coefficient of CIGS thin films was measured by Ultraviolet-visible Spectrophotometer. Four-point probe method was used to test the resistivity of CIGS thin films. Based on the results of characterization, the increase in crystallite size of CIGS was found to be significantly noticeable with increasing substrate temperature. UV-vis measurement analysis suggested that CIGS thin films deposited at different substrate temperatures had high absorption coefficient (~104 cm-1) and optical band gap (1.07-1.23 eV). The substrate temperature dependence of the resistivity of the films indicated that the resistivity of the films fall to about 0.5 Ω۰cm as the substrate glass was heated up to 300 °C.

Preparation and Characterization of Cu-Ga-Se Films of Ordered Vacancy Compound

2003 ◽  
Vol 763 ◽  
Author(s):  
S. Nishiwaki ◽  
S. Siebentritt ◽  
M. Ch. Lux-Steiner
Keyword(s):  
Short Circuit ◽  
Short Circuit Current ◽  
Bottom Layer ◽  
Soda Lime ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Chalcopyrite Structure ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates

AbstractCu-Ga-Se films with an orderd vacancy compound (OVC) structure were prepared at substrate temperature about 500 °C by thermal co-deposition. With a preparation under extremely Se excess condition, films of the OVC were synthesized within the compositional ratio of 0.73 ≤ [Ga]/([Cu]+[Ga]) ≤ 0.86 along Cu2Se-Ga2Se3 pseudo binary system. The growth on soda-lime glass substrates improves the crystallinity compared to that on alkali-free glass. An increase in the optical bandgaps of OVC films from 1.85 eV to 1.94 eV was observed with an increase in the Ga content of the films. The deposition of Cu and Se onto Ga2Se3 films resulted in a vertically inhomogeneous film: the bottom layer with the OVC structure and the top layer with the chalcopyrite structure. A solar cell using the CuGa5.0Se8.1 film within a ZnO/CdS/CuGa-Se/Mo/soda-lime glass substrate structure showed an open circuit voltage of 947 mV, an efficiency of 2.2 %, a short circuit current density of 4.5 mA/cm2, and a fill factor of 0.52 (Air Mass 1.5, 0.5 cm2, total area).

Enhanced Mo Adhesion on Glass With Cr Interlayers for Copper Indium Diselenide Thin Film Devices

1996 ◽  
Vol 426 ◽  
Author(s):  
Jeff Alleman ◽  
Dave Ginley ◽  
Falah Hasoon ◽  
Sally Asher ◽  
Rommel Noufi
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Bulk Material ◽  
Surface Preparation ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Process Conditions ◽  
Copper Indium Diselenide ◽  
Copper Indium ◽  
Glass Interface

AbstractA key element of current Copper Indium Diselenide (CIS) and Copper Indium Gallium Diselenide (CIGS) thin film solar cells is the use of a Mo back contact on soda lime glass (SGL). Because of surface preparation problems, high process temperatures, and mismatch of thermal expansion coefficients, adhesion of the Mo to the soda lime glass can be variable. Also beneficial is the Na facile diffusion of the glass into the absorber layer. We report on the use of thin Cr interlayers to improve the adhesion at the Mo/glass interface. The films were subsequently annealed in vacuum under normal process conditions. Adhesion was excellent and quite uniform for Mo layers with a Cr interlayer of 50 to 800 Å compared to control samples without Cr. X-ray Photoelectron Spectroscopy (XPS) data suggests CrO bonding at the glass interface and Cr metallic bonding at the Cr Mo interface. Secondary Ion Mass Spectrometry (SIMS) data for Mo/Cr films shows diffusion of Na throughout the Mo layer identical to that for Mo alone samples. Resistivities of the films have been measured to be 11 μhms-cm, twice that for bulk material of 5.7 μohms-cm. CIGS films were then grown for comparison to films grown on Mo only substrates.

The Effect of Sputtering Power on the Properties of One-step Deposited Cu2ZnSnSe4 Thin Films

2014 ◽  
Vol 1603 ◽  
Author(s):  
Yong Yan ◽  
Shasha Li ◽  
Zhou Yu ◽  
Yong Zhang ◽  
Yong Zhao
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Room Temperature ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Radio Frequency Magnetron Sputtering ◽  
Glass Substrates ◽  
Sputtering Power ◽  
One Step ◽  
Deposited Films

ABSTRACTCu2ZnSnSe4 films were deposited on soda lime glass substrates at room temperature by one-step radio frequency magnetron-sputtering process. The effect of sputtering power on the properties of one-step deposited Cu2ZnSnSe4 thin films has been investigated. The deposited films might be suitable for the absorber layers in the solar cells. The chemical composition and the preferred orientation of the films can be optimized by the sputtering power.

scholarly journals One-Step Growth of Graphene/Carbon Nanotube Hybrid Films on Soda-Lime Glass for Transparent Conducting Applications

2017 ◽  
Vol 3 (11) ◽  
pp. 1700212 ◽  
Author(s):  
Zhaolong Chen ◽  
Xu-Dong Chen ◽  
Huihui Wang ◽  
Xinqi Li ◽  
Li Lin ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Soda Lime ◽  
Soda Lime Glass ◽  
Hybrid Films ◽  
Transparent Conducting ◽  
One Step ◽  
Step Growth
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