Characterization of large area devices by an improved constant capacitance voltage transient technique

Solar Cells ◽  
1988 ◽  
Vol 24 (3-4) ◽  
pp. 363-369
Author(s):  
Jeng-Jye Shiau ◽  
Alen L. Fahrenbruch ◽  
Richard H. Bube
Keyword(s):  
Large Area ◽  
Transient Technique ◽  
Capacitance Voltage ◽  
Voltage Transient

Characterization of the damage induced in boron-implanted and RTA annealed silicon by the capacitance-voltage transient technique

1994 ◽  
Vol 9 (9) ◽  
pp. 1637-1648 ◽  
Author(s):  
S Duenas ◽  
E Castan ◽  
L Enriquez ◽  
J Barbolla ◽  
J Montserrat ◽  
...  
Keyword(s):  
Transient Technique ◽  
Capacitance Voltage ◽  
Voltage Transient

Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C

2012 ◽  
Vol 717-720 ◽  
pp. 1187-1189
Author(s):  
Ruby N. Ghosh ◽  
Reza Loloee
Keyword(s):  
High Temperature ◽  
Field Effect ◽  
Gate Oxide ◽  
Voltage Characteristic ◽  
Capacitive Sensors ◽  
Large Area ◽  
Signal Noise ◽  
Capacitance Voltage ◽  
Corrosive Environments

SiC based capacitive devices have the potential to operate in high temperature, chemically corrosive environments provided that the electrical integrity of the gate oxide and metallization can be maintained in these environments. We report on the performance of large area, up to 8 x 10-3 cm2, field-effect capacitive sensors fabricated on both the 4H and 6H polytypes at 600°C. Large area capacitors improve the signal/noise (S/N) ratio which is proportional to the slope of the capacitance-voltage characteristic. At 600 °C we obtain a S/N ~ 20. The device response is independent of polytype, either 4H or 6H-SiC. These results demonstrate the reliability of our field-effect structure, operating as a simple potentiometer at high temperature.

Determination of high‐field‐enhanced emission rates with the constant capacitance‐voltage transient technique

1989 ◽  
Vol 65 (7) ◽  
pp. 2734-2738 ◽  
Author(s):  
M. B. Chang ◽  
H. Tomokage ◽  
J. J. Shiau ◽  
R. H. Bube ◽  
J. C. Bravman
Keyword(s):  
High Field ◽  
Emission Rates ◽  
Transient Technique ◽  
Capacitance Voltage ◽  
Voltage Transient

Nanoprobe Characterization of Soft SRAM bit Fails in Advanced Technologies

2019 ◽  
Author(s):  
Satish Kodali ◽  
Chen Zhe ◽  
Chong Khiam Oh
Keyword(s):  
Yield Loss ◽  
Performance Metrics ◽  
Root Cause ◽  
Advanced Technologies ◽  
Capacitance Voltage ◽  
Defect Localization ◽  
Cv Measurements ◽  
Lightly Doped Drain ◽  
Dc Characterization

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

dC/dV and CV Characterization of Gate Resistance Defects in eDRAM Circuits

2013 ◽  
Author(s):  
Sweta Pendyala ◽  
Dave Albert ◽  
Katherine Hawkins ◽  
Michael Tenney
Keyword(s):  
Deep Submicron ◽  
Work Flow ◽  
Localization Technique ◽  
Characterization Techniques ◽  
Capacitance Voltage ◽  
Gate Resistance

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.

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