Texture evolution by grain growth in the presence of MnS and AIN precipitates in Fe-3% Si alloy

1990 ◽  
Vol 38 (8) ◽  
pp. 1395-1403 ◽  
Author(s):  
J. Harase ◽  
R. Shimizu
1994 ◽  
Vol 343 ◽  
Author(s):  
J. A. Floro ◽  
C. V. Thompson

ABSTRACTAbnormal grain growth is characterized by the lack of a steady state grain size distribution. In extreme cases the size distribution becomes transiently bimodal, with a few grains growing much larger than the average size. This is known as secondary grain growth. In polycrystalline thin films, the surface energy γs and film/substrate interfacial energy γi vary with grain orientation, providing an orientation-selective driving force that can lead to abnormal grain growth. We employ a mean field analysis that incorporates the effect of interface energy anisotropy to predict the evolution of the grain size/orientation distribution. While abnormal grain growth and texture evolution always result when interface energy anisotropy is present, whether secondary grain growth occurs will depend sensitively on the details of the orientation dependence of γi.


2011 ◽  
Vol 306-307 ◽  
pp. 116-119
Author(s):  
Masahiko Demura ◽  
Ya Xu ◽  
Toshiyuki Hirano

This article presents the texture evolution and the ductility improvement of the cold-rolled foils of boron-free Ni3Al during the recrystallization and the subsequent grain growth. The cold-rolled foils had sharp {110} textures. After the recrystallization at 873K/0.5h, the texture was disintegrated with several texture components. Interestingly, most of them had a single rotation relationship. i.e. 40˚ around <111>. With the progress of the grain growth, however, the texture returned to the sharp, cold-rolled textures. This two-stage texture evolution, called as “Texture memory effect”, was explained assuming a high mobility of the grain boundary with the 40˚<111> rotation relationship. The texture returning was highly effective to improve the ductility of the foils.


2005 ◽  
Vol 495-497 ◽  
pp. 749-754 ◽  
Author(s):  
Chang Sik Ha ◽  
Yong Bum Park

In electroformed pure Ni and Fe-Ni alloys with nanometer-sized crystallites, grain growth that takes place during annealing results in a common texture change. With regard to the macrotextures, the as-deposited textures were of fibre-type characterized by strong <100>//ND and weak <111>//ND components, and the texture development due to grain growth was defined by strong <111>//ND fibre texture with the minor <100>//ND components. It was clarified by means of the microtexture analysis that abnormal growth of the <111>//ND grains occurs in the early stages of grain growth. The possible effects of the abnormal grain growth on the texture evolution have been discussed in terms of the orientation dependence of energy density.


2007 ◽  
Vol 990 ◽  
Author(s):  
Chia-Jeng Chung ◽  
David Field ◽  
No-Jin Park ◽  
Christy Woo

ABSTRACTGrain growth in polycrystalline films is controlled by the energetics of the surface, interface and grain boundaries as well as strain energy. The unique character of damascene lines fabricated from electroplated Cu films introduces the additional considerations of bath chemistry and geometric constraints. The moderate stacking fault energy of Cu allows for the development of a substantial twin fraction for certain growth conditions. This paper discusses in-situ observation of grain growth in Cu films and lines under various processing conditions. It is shown that for thicker films and for structures constrained within damascene trenches the energetics of twin boundary formation play a large role in texture development of these structures.


2005 ◽  
Vol 397 (1-2) ◽  
pp. 346-355 ◽  
Author(s):  
N. Bozzolo ◽  
N. Dewobroto ◽  
T. Grosdidier ◽  
F. Wagner

2005 ◽  
Vol 863 ◽  
Author(s):  
D.P. Field ◽  
NJ Park ◽  
PR Besser ◽  
JE Sanchez

AbstractStructure evolution in plated Cu films is a function of sublayer stacking, film thickness, plating chemistry, plating parameters, and temperature. The present work examines grain growth and texture evolution in annealed plated Cu on a 25 nm thick Ta sublayer for films of 480 and 750 nm in thickness. These results are compared against those obtained from damascene Cu lines fabricated from a similar process, using a series of line widths. The results show that the initial structures of the plated films are similar, with slightly weaker (111) texture, a higher fraction of twin boundaries, and larger grains in the thicker films. The microstructure of the Cu within the trench constraints is a strong function of line geometry with the propensity for twin boundary development controlling structural evolution.


2008 ◽  
Vol 23 (3) ◽  
pp. 642-662 ◽  
Author(s):  
K. Vanstreels ◽  
S.H. Brongersma ◽  
Zs. Tokei ◽  
L. Carbonell ◽  
W. De Ceuninck ◽  
...  

A new grain-growth mode is observed in thick sputtered copper films. This new grain-growth mode, also referred to in this work as super secondary grain growth (SSGG) leads to highly concentric grain growth with grain diameters of many tens of micrometers, and drives the system toward a {100} texture. The appearance, growth dynamics, final grain size, and self-annealing time of this new grain-growth mode strongly depends on the applied bias voltage during deposition of these sputtered films, the film thickness, the post-deposition annealing temperature, and the properties of the copper diffusion barrier layers used in this work. Moreover, a clear rivalry between this new growth mode and the regularly observed secondary grain-growth mode in sputtered copper films was found. The microstructure and texture evolution in these films is explained in terms of surface/interface energy and strain-energy density minimizing driving forces, where the latter seems to be an important driving force for the observed new growth mode. By combining these sputtered copper films with electrochemically deposited (ECD) copper films of different thickness, the SSGG growth mode could also be introduced in ECD copper, but this led to a reduced final SSGG grain size for thicker ECD films. The knowledge about the thin-film level is used to also implement this new growth mode in small copper features by slightly modifying the standard deposition process. It is shown that the SSGG growth mode can be introduced in narrow structures, but optimizations are still necessary to further increase the mean grain size in features.


Sign in / Sign up

Export Citation Format

Share Document