The initial stages of the formation of holes and hillocks in thin films under equal biaxial stress

1995 ◽  
Vol 43 (12) ◽  
pp. 4289-4300 ◽  
Author(s):  
F.Y. Génin
Keyword(s):  
2003 ◽  
Vol 779 ◽  
Author(s):  
Markus J. Buehler ◽  
Alexander Hartmaier ◽  
Huajian Gao

AbstractMotivated by recent theoretical and experimental progress, large-scale atomistic simulations are performed to study plastic deformation in sub-micron thin films. The studies reveal that stresses are relaxed by material transport from the surface into the grain boundary. This leads to the formation of a novel defect identified as diffusion wedge. Eventually, a crack-like stress field develops because the tractions along the grain boundary relax, but the adhesion of the film to the substrate prohibits strain relaxation close to the interface. This causes nucleation of unexpected parallel glide dislocations at the grain boundary-substrate interface, for which no driving force exists in the overall biaxial stress field. The observation of parallel glide dislocations in molecular dynamics studies closes the theory-experiment-simulation linkage. In this study, we also compare the nucleation of dislocations from a diffusion wedge with nucleation from a crack. Further, we present preliminary results of modeling constrained diffusional creep using discrete dislocation dynamics simulations.


2007 ◽  
Vol 91 (2) ◽  
pp. 021915 ◽  
Author(s):  
Y. F. Li ◽  
B. Yao ◽  
Y. M. Lu ◽  
C. X. Cong ◽  
Z. Z. Zhang ◽  
...  

2014 ◽  
Vol 306 ◽  
pp. 70-74 ◽  
Author(s):  
D. Faurie ◽  
P.-O. Renault ◽  
E. Le Bourhis ◽  
G. Geandier ◽  
P. Goudeau ◽  
...  

2014 ◽  
Vol 47 (1) ◽  
pp. 291-302 ◽  
Author(s):  
Silke Julia Birgit Kurz ◽  
Udo Welzel ◽  
Ewald Bischoff ◽  
Eric Jan Mittemeijer

The presence of planar faults complicates the diffraction stress analysis enormously owing to fault-induced displacement, broadening and asymmetry of the Bragg reflections. A dedicated stress-analysis method has been developed for highly planar-faulted, fibre-textured thin films of cubic crystal symmetry, using only specific reflections for diffraction stress analysis. The effect of unjustified use of other reflections has been demonstrated in the course of application of the method to Ni and Ni(W) thin films exhibiting excessive faulting and subjected to (1) a planar, rotationally symmetric stress state and (2) a planar biaxial stress state. In case 1 the crystallite-group method has been used, whereas in case 2 the stress-analysis method based on X-ray stress factors had to be applied. The successful separation of stress- and fault-induced reflection displacements has enabled the investigation of the mechanical behaviour of Ni and Ni(W) thin films byin situstress measurements during tensile loading, thereby exposing pronounced stiffness and increased strength by alloying with W.


Author(s):  
Tai D. Nguyen ◽  
James H. Underwood

Sputtered x-ray multilayer coatings usually exhibit the presence of intrinsic stress in the structures. Stress in the coatings are undesirable in many x-ray optical applications where flat mirrors, or precise control of curved mirrors, are designed. Controlling of the stress in these multilayers requires understanding of stress and microstructural evolution in multilayers and thin films.Stress in thin films can be determined by the amount of bending or curvature of the substrate caused by the films. For a film deposited on a flat substrate, stress in the film is measured by using the laser scanning technique. The change in the curvature of the film and substrate is determined fromthe reflection profile fo the incident laser.For the usual case of a substrate that is elastically isotropic in the plane of the film, the expression of the biaxial stress in the film is given by the Stoney equation:for the case in which the thickness of the films is usually much less than that of the substrate, where E and γ are the substrate biaxial modulus and Poison ratio, ts and tare the substrate and film thicknesses, and K is the substrate curvature.


1997 ◽  
Vol 493 ◽  
Author(s):  
J. F. Shepard ◽  
F. Chu ◽  
P. J. Moses ◽  
S. Trolier-McKinstry

The wafer flexure technique has been developed for the rapid measurement (less than 10 minutes) of the d31 coefficient of piezoelectric thin films. The technique is based upon the controlled bending of a clamped silicon substrate coated with a thin piezoelectric film. Flexure of the wafer results in the transfer of biaxial stress from the silicon to the film, and thus the production of an electric charge. The charge produced is used in conjunction with the applied principle stresses to determine the film's transverse piezoelectric coefficient (d31). For this study, the wafer flexure technique was modified from semi-ac operation to a mechanized ac measurement (i.e. electronic pressure oscillation and lock-in charge detection). Modifications made reduce electromagnetic noise and enhance both the resolution and precision of the device. The system was used to characterize the piezoelectric properties of lead zirconate titanate 52/48 thin films between 0.6 and 2.5 μm thick synthesized using a modified sol-gel technique. The transverse piezoelectric constants (d31) of the PZT films were found to range from −60 to −90 pC/N for the 0.6 and 2.5 μm films, respectively. Aging experiments of the d31; coefficients were also conducted and results showed values to be on the order of 4 to 8% per decade.


2004 ◽  
Vol 19 (11) ◽  
pp. 3374-3381 ◽  
Author(s):  
Evan A. Sperling ◽  
Peter M. Anderson ◽  
Jennifer L. Hay

Heat treatment of γ-Ni(Al)/γ′-Ni3Al multilayer thin films demonstrates that multilayer hardness correlates with the magnitude of biaxial stress in alternating layers. Films with a columnar grain morphology and (001) texture were fabricated over a range of volume fraction and bilayer thickness via direct current magnetron sputtering onto NaCl (001) substrates at 623 K. The films were removed from substrates, heat-treated at either 673 K or 1073 K in argon, and then mounted for nanoindentation and x-ray diffraction. The biaxial stress state in each phase was furnished from x-ray diffraction measurement of (002) interplanar spacings. The 673 K treatment increases the magnitude of alternating biaxial stress state by 70 to 100% and increases hardness by 25 to 100%, depending on bilayer thickness. In contrast, the 1073 K heat treatment decreases the stress magnitude by 70% and decreases hardness by 50%. The results suggest that the yield strength of these thin films is controlled, in part, by the magnitude of internal stress. Further, thermal treatments are demonstrated to be an effective means to manipulate internal stress.


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