Dependence of growth stress on microstructure in periodic nanometer layered thin-film coatings

Author(s):  
Tai D. Nguyen ◽  
James H. Underwood

Sputtered x-ray multilayer coatings usually exhibit the presence of intrinsic stress in the structures. Stress in the coatings are undesirable in many x-ray optical applications where flat mirrors, or precise control of curved mirrors, are designed. Controlling of the stress in these multilayers requires understanding of stress and microstructural evolution in multilayers and thin films.Stress in thin films can be determined by the amount of bending or curvature of the substrate caused by the films. For a film deposited on a flat substrate, stress in the film is measured by using the laser scanning technique. The change in the curvature of the film and substrate is determined fromthe reflection profile fo the incident laser.For the usual case of a substrate that is elastically isotropic in the plane of the film, the expression of the biaxial stress in the film is given by the Stoney equation:for the case in which the thickness of the films is usually much less than that of the substrate, where E and γ are the substrate biaxial modulus and Poison ratio, ts and tare the substrate and film thicknesses, and K is the substrate curvature.

2019 ◽  
Vol 181 ◽  
pp. 108063 ◽  
Author(s):  
Fakhrodin Motazedian ◽  
Zhigang Wu ◽  
Junsong Zhang ◽  
Bashir Samsam Shariat ◽  
Daqiang Jiang ◽  
...  

1997 ◽  
Vol 472 ◽  
Author(s):  
P. Gergaud ◽  
S. Labat ◽  
H. Yang ◽  
A. Bottger ◽  
P. SandstrÖm ◽  
...  

ABSTRACTMultilayers and superlattices are of great industrial interest because of their specific properties (magnetic, electronic, tribological…). Multilayers stacking are often in a very high state of intrinsic stress (some GPa) and for reliable integrated devices to be made it is capital to control and understand these intrinsic as well as extrinsic stresses. The objective of the present work is therefore the understanding of the origin of stresses and strains in multilayered metallic materials. Of course, a comparison of the different techniques which can be used for stress determination is a necessary first step of this study. In this aim, we have studied Ag/Ni multilayers, Ag and Ni thin films and Ag/Ni bilayers obtained by sputtering. The stresses have been determined via curvature measurement using both a laser scanning method and X-ray diffraction rocking curves technique, and via X-ray diffraction measurement of several d-spacings which act as in-situ strain gauges (also called the sin2ψ method and related methods). The obtained results from these different techniques are discussed in terms of accuracy, reproducibility and advantages / drawbacks. The obtained stresses from these methods cannot be directly compared and a specific discussion is developed around the relation between the measured strains and stresses and the microstructure of the materials.


1994 ◽  
Vol 356 ◽  
Author(s):  
Tai D. Nguyen ◽  
Tue Nguyen ◽  
James H. Underwood

AbstractUnderstanding of the stress in thin films is important in controls of the properties of nanometer period x-ray multilayers. Stress evolution at the initial stages of thin film formation was studied by molecular dynamics simulation of Mo atoms impinging on a 5×5×5 unit cell Mo substrate. The simulation shows that the structure initially increases in a compressive state. The stress then decreases when the deposited atoms have covered the substrate surface. Measured stress of Ru films in Ru/C multilayers by laser curvature technique shows similar behavior to the simulated results.


2015 ◽  
Vol 1746 ◽  
Author(s):  
Narayan K. V. L.V. Achari ◽  
Amiya Banerjee ◽  
Srinivasan Raghavan

ABSTRACTZrO2/Ge is potential high-k dielectric candidate to replace silicon based devices. Controlling stress in zirconia film and stabilizing high dielectric constant phase is crucial for high-k application. A precise control of stress and phase selectivity in high-k thin films is demonstrated. Thin films of ZrO2 were grown by reactive sputter deposition. Wide range of growth stress in thin films from -0.3 to -2.8 GPa can be tuned by growth rate control. Adatom incorporation into grain boundary was the dominant source of observed stress. Phase selectivity in zirconia was achieved by tuning growth parameters.


2015 ◽  
Vol 1096 ◽  
pp. 93-97
Author(s):  
Bao Jun Yan ◽  
Shu Lin Liu ◽  
Lu Ping Yang

Oxide thin films such as aluminum oxide doped with zinc (AZO), and aluminum oxide (Al2O3) were prepared in the pores of microchannel plate (MCP) by atomic layer deposition (ALD), which is a precise control thin film thickness on substrate with high aspect ratio structure. In this paper, homogenous oxide thin films deposited on varied substrates were prepared by ALD technology under different conditions, and the morphology, element distribution and structure of deposited samples are systematically investigated by scanning electron microscopy (SEM), energy dispersive x-ray (EDX), and x-ray diffraction (XRD) respectively, The results show that ALD technique is a good method to grow homogenous thin films on MCP.


2004 ◽  
Vol 19 (11) ◽  
pp. 3374-3381 ◽  
Author(s):  
Evan A. Sperling ◽  
Peter M. Anderson ◽  
Jennifer L. Hay

Heat treatment of γ-Ni(Al)/γ′-Ni3Al multilayer thin films demonstrates that multilayer hardness correlates with the magnitude of biaxial stress in alternating layers. Films with a columnar grain morphology and (001) texture were fabricated over a range of volume fraction and bilayer thickness via direct current magnetron sputtering onto NaCl (001) substrates at 623 K. The films were removed from substrates, heat-treated at either 673 K or 1073 K in argon, and then mounted for nanoindentation and x-ray diffraction. The biaxial stress state in each phase was furnished from x-ray diffraction measurement of (002) interplanar spacings. The 673 K treatment increases the magnitude of alternating biaxial stress state by 70 to 100% and increases hardness by 25 to 100%, depending on bilayer thickness. In contrast, the 1073 K heat treatment decreases the stress magnitude by 70% and decreases hardness by 50%. The results suggest that the yield strength of these thin films is controlled, in part, by the magnitude of internal stress. Further, thermal treatments are demonstrated to be an effective means to manipulate internal stress.


2012 ◽  
Vol 27 (17) ◽  
pp. 2257-2264 ◽  
Author(s):  
Anna Regoutz ◽  
Kelvin H.L. Zhang ◽  
Russell G. Egdell ◽  
Didier Wermeille ◽  
Roger A. Cowley

Abstract


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