Shallow traps in doped SBN crystals

1995 ◽  
pp. 188-191
Author(s):  
A.V. Mamaev ◽  
K. Orazov ◽  
V.V. Shkunov ◽  
M.V. Zolotarev
Keyword(s):  
Shallow Traps

Localized Deep and Shallow Traps of α-Peaks from Thermally Stimulated Current (TSC) Measurement on Thermoplastic Polymers

2021 ◽  
Vol 317 ◽  
pp. 369-376
Author(s):  
Norhana Abdul Halim ◽  
Siti Zulaikha Ngah Demon ◽  
Norli Abdullah ◽  
Nurazlin Ahmad ◽  
Zul Hazrin Zainal Abidin
Keyword(s):  
Deep Trap ◽  
Order Kinetic ◽  
Thermally Stimulated Current ◽  
Thermoplastic Polymers ◽  
Debye Relaxation ◽  
First Order ◽  
Plasticized Pvc ◽  
Space Charges ◽  
Shallow Traps ◽  
Trap Levels

In this paper, trap levels around the glass transition temperature (Tg) of polymers have been characterized using Thermally Stimulated Current (TSC) technique. Deconvolution on α-peaks of the Tg for PE (-104 °C), plasticized PVC (-35 °C), PMMA (90 °C) and PET (96 °C) were carried out based on the first-order kinetic theory for non-Debye relaxation. Using temperature, T from TSC experimental data, we have successfully separated the α-peaks of the thermoplastic polymers. It is found that the complex curve of α-peaks can composed of four (4) to eight (8) sub peaks. Dominant sub peaks were identified at Tmax = -105 °C, -34 °C, 89 °C and 92 °C for PE, pPVC, PMMA and PET, respectively. These peaks show activation energy, Ea of shallow and deep trap centers ranged from 0.3 eV to 4.6 Ev where they represent the depolarization of localized dipoles and space charges relaxations in the polymers.

Shallow traps for thermally induced hole hopping in DNA

2006 ◽  
Vol 326 (1) ◽  
pp. 252-258 ◽  
Author(s):  
M. Bixon ◽  
Joshua Jortner
Keyword(s):  
Thermally Induced ◽  
Shallow Traps

Electrons in shallow traps at 77 K

1975 ◽  
Vol 36 (1) ◽  
pp. 120-122 ◽  
Author(s):  
Johan Moan ◽  
Bjørn Høvik
Keyword(s):  
Shallow Traps

Optical and thermal depth of shallow traps in ZnS

1973 ◽  
Vol 18 (1) ◽  
pp. 337-345 ◽  
Author(s):  
G. Baur ◽  
R. Wengert ◽  
V. Wittwer
Keyword(s):  
Shallow Traps

TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING

2004 ◽  
Vol 14 (03) ◽  
pp. 769-774
Author(s):  
HYEONGNAM KIM ◽  
JAESUN LEE ◽  
WU LU
Keyword(s):  
Time Constant ◽  
High Mobility ◽  
Time Constants ◽  
Emission Time ◽  
Annealing Effects ◽  
Drain Bias ◽  
Gan Hemts ◽  
Electron Transistors ◽  
Shallow Traps ◽  
Transient Measurements

Trapping effects are investigated to examine the post-gate annealing effects on AlGaN/GaN high-mobility electron transistors (HEMTs) using pulsed I-V and transient measurements. In the unannealed devices, shallow traps are identified, which have an activation of 38 meV at a drain bias of 7 V. The time constant of these traps is determined to be ~0.5 μs. Devices annealed at 400°C for 10 minutes have a significantly smaller number of traps. However, a small number of traps with a longer time constant of 9.2 μs are created or activated during post-gate annealing. 20-minute annealing at 400°C leads to the increase of the number of traps with emission time constants of 21.6 μs and 1.25 ms. The breakdown voltage improvement by post-gate annealing is attributed to the removal or significant reduction of the shallow level traps.

scholarly journals Optically Stimulated Nanodosimeters with High Storage Capacity

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1127 ◽  
Author(s):  
David Van der Heggen ◽  
Daniel R. Cooper ◽  
Madeleine Tesson ◽  
Jonas J. Joos ◽  
Jan Seuntjens ◽  
...  
Keyword(s):  
Storage Capacity ◽  
Infrared Light ◽  
X Rays ◽  
High Storage Capacity ◽  
Uniform Solution ◽  
Bright Green ◽  
Medical Dosimetry ◽  
Coprecipitation Route ◽  
Shallow Traps ◽  
High Storage

In this work we report on the thermoluminescence (TL) and optically stimulated luminescence (OSL) properties of β-Na(Gd,Lu)F4:Tb3+ nanophosphors prepared via a standard high-temperature coprecipitation route. Irradiating this phosphor with X-rays not only produces radioluminescence but also leads to a bright green afterglow that is detectable up to hours after excitation has stopped. The storage capacity of the phosphor was found to be (2.83 ± 0.05) × 1016 photons/gram, which is extraordinarily high for nano-sized particles and comparable to the benchmark bulk phosphor SrAl2O4:Eu2+,Dy3+. By combining TL with OSL, we show that the relatively shallow traps, which dominate the TL glow curves and are responsible for the bright afterglow, can also be emptied optically using 808 or 980 nm infrared light while the deeper traps can only be emptied thermally. This OSL at therapeutically relevant radiation doses is of high interest to the medical dosimetry community, and is demonstrated here in uniform, solution-processable nanocrystals.

Photorefractive effect in sillenite crystals with shallow traps in a sign-alternating electric field

1998 ◽  
Vol 40 (11) ◽  
pp. 1844-1849 ◽  
Author(s):  
O. V. Kobozev ◽  
S. M. Shandarov ◽  
R. V. Litvinov ◽  
Yu. F. Kargin ◽  
V. V. Volkov
Keyword(s):  
Electric Field ◽  
Photorefractive Effect ◽  
Alternating Electric Field ◽  
Shallow Traps

The Effect of Light Soaking on the Photoconductivity Response in A-SI:H

1986 ◽  
Vol 70 ◽  
Author(s):  
Qiu Changhua ◽  
Wu Wenhao ◽  
Zhao Shifu ◽  
Han Daxing
Keyword(s):  
Steady State ◽  
Response Time ◽  
Fermi Level ◽  
Low Temperatures ◽  
Deep Traps ◽  
Temperature Dependences ◽  
The Difference ◽  
Shallow Traps ◽  
Photoconductivity Response ◽  
Effect Of Light

ABSTRACTThe temperature dependences of response time tr and steady state photoconductivity (PC) were used to deduce the DOS at energies above the dark Fermi level. The tr and PC of annealled state A and light soaked state B were measured from 115K to 300K. Light soaking causes degradation of PC. Compared with state A, the PC response of state B is faster at low temperatures, but is slower at high temperatures. The difference between state A and state B was interpreted by a decrease of shallow traps and an increase of deep traps.

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