Depth profiling of HTSC thin films by secondary neutral mass spectrometry

1994 ◽  
pp. 545-548
Author(s):  
H. Börner ◽  
M. Lorenz ◽  
H. Hochmuth ◽  
K. Unger
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Depth Profiling ◽  
Htsc Thin Films

Ultra Shallow Depth Profiling with SIMS

2008 ◽  
Vol 573-574 ◽  
pp. 197-205 ◽  
Author(s):  
H. Ulrich Ehrke
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Processes ◽  
Depth Profiling ◽  
Semiconductor Technology ◽  
Technology Standard ◽  
Secondary Ion ◽  
Analytical Requirements

Secondary Ion Mass Spectrometry (SIMS) is frequently used in the characterization of thin films, coatings, diffusion processes, materials composition and in the analysis of implants. The SIMS technique has been continuously developed for more than 30 years. One of the main drivers was semiconductor technology. Standard implants in Si like B, As and P, implanted with a few keV to MeV energy are routinely measured with high precision. But nowadays with implant energies of 500 eV and below, when ultra shallow structures are examined, the desired information is in the first few nm to some tens of nm. This has a great impact on the analytical requirements and quantification procedures. Some of these aspects will be examined in this contribution.

Excimer Laser Induced Deposition of Bisrcacuo Htsc Thin Films and Buffer Layers -Depth Profiling by SNMS

1992 ◽  
Vol 285 ◽  
Author(s):  
M. Lqrenz ◽  
H. Hochmuth ◽  
H. Börner ◽  
K. Unger
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Decomposition Temperature ◽  
Buffer Layers ◽  
In Situ Deposition ◽  
Htsc Thin Films ◽  
Insight Into

ABSTRACTSecondary Neutrals Mass Spectrometry SNMS was used to investigate interdiffusion processes in laser deposited BiSrCaCuO HTSC thin films on various substrate materials. The in-situ deposition of epitaxial Bi2Sr2Ca1Cu2O8+x films requires a substrate temperature just below the decomposition temperature of the 2212 -phase of BiSrCaCuO. This high substrate temperature of about 850°C seems to be the reason for interdiffusion processes of BiSrCaCuO films and MgO(100), YSZ(100) and Si(100) with YSZ or SrTiO3 buffer layers as substrate materials. Therefore, Tc(R=0) of BiSrCaCuO films on silicon with buffer layer is not higher than 70 K at present. SNMS depth profiling gives a more detailed insight into interdiffusion phenomena than other analytical techniques.

High-resolution secondary ion mass spectrometry depth profiling of superconducting thin films

1998 ◽  
Vol 317 (1-2) ◽  
pp. 237-240 ◽  
Author(s):  
N.J Montgomery ◽  
J.L MacManus-Driscoll ◽  
D.S McPhail ◽  
R.J Chater ◽  
B Moeckly ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
High Resolution ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Superconducting Thin Films ◽  
Ion Mass Spectrometry ◽  
Secondary Ion
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