Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM

2019 ◽  
Vol 167 ◽  
pp. 159-166
Author(s):  
Yadira Arroyo Rojas Dasilva ◽  
Rolf Erni ◽  
Fabio Isa ◽  
Giovanni Isella ◽  
Hans von Känel ◽  
...  
2000 ◽  
Vol 654 ◽  
Author(s):  
R.F. Klie ◽  
N. D. Browning

AbstractWe have examined the structure, composition and bonding at an un-doped 58° [001] tilt grain-boundary in SrTiO3 in order to investigate the control that the grain boundary exerts over the bulk properties. Room temperature and in-situ heating experiments show that there is a segregation of oxygen vacancies to the grain boundary that is increased at elevated temperatures and is independent of the cation arrangement. These measurements indicate that the widely observed electronic properties of grain boundaries may be due to an excess of mobile oxygen vacancies that cause a highly doped n-type region in the close proximity ( ≍ 1 unit cell) to the boundary. These results are shown to be consistent with both theoretical models and lower resolution chemical analysis.


Author(s):  
N. D. Browning ◽  
M. M. McGibbon ◽  
M. F. Chisholm ◽  
S. J. Pennycook

Characterization of grain boundaries in ceramics is complicated by the multicomponent nature of the materials, the presence of secondary phases, and the tendency for the grain boundary plane to “wander” on the length scale of a few nanometers. However, recent developments in the scanning transmission electron microscope (STEM) have now made it possible to correlate directly the structure, composition and bonding at grain boundaries on the atomic scale. This direct experimental characterization of grain boundaries is achieved through the combination of Z-contrast imaging (structure) and electron energy loss spectroscopy (EELS) (composition and bonding). For crystalline materials in zone-axis orientations, where the atomic spacing is larger than the probe size, the Z-contrast technique provides a direct image of the metal (high Z) columns. This image, being formed from only the high-angle scattering, can be used to position the electron probe with atomic precision for simultaneous EELS. Under certain collection conditions, the spectrum can have the same atomic spatial resolution as the image, thus permitting the spectra to be correlated with a known atomic location.


2020 ◽  
Vol 26 (2) ◽  
pp. 247-257 ◽  
Author(s):  
Benjamin M. Jenkins ◽  
Frédéric Danoix ◽  
Mohamed Gouné ◽  
Paul A.J. Bagot ◽  
Zirong Peng ◽  
...  

AbstractInterfaces play critical roles in materials and are usually both structurally and compositionally complex microstructural features. The precise characterization of their nature in three-dimensions at the atomic scale is one of the grand challenges for microscopy and microanalysis, as this information is crucial to establish structure–property relationships. Atom probe tomography is well suited to analyzing the chemistry of interfaces at the nanoscale. However, optimizing such microanalysis of interfaces requires great care in the implementation across all aspects of the technique from specimen preparation to data analysis and ultimately the interpretation of this information. This article provides critical perspectives on key aspects pertaining to spatial resolution limits and the issues with the compositional analysis that can limit the quantification of interface measurements. Here, we use the example of grain boundaries in steels; however, the results are applicable for the characterization of grain boundaries and transformation interfaces in a very wide range of industrially relevant engineering materials.


2021 ◽  
pp. 2003309
Author(s):  
Xin Xu ◽  
Connor Carr ◽  
Xinqi Chen ◽  
Benjamin D. Myers ◽  
Ruiyun Huang ◽  
...  

2019 ◽  
Vol 162 ◽  
pp. 161-165 ◽  
Author(s):  
Xiaodong Wang ◽  
Wei Zhou ◽  
Pan Liu ◽  
Shuangxi Song ◽  
Kolan Madhav Reddy

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