Characterization of ion species of silicon oxide films using positive and negative secondary ion mass spectra

2006 ◽  
Vol 253 (2) ◽  
pp. 412-416 ◽  
Author(s):  
Kiyoshi Chiba ◽  
Shun Nakamura
Keyword(s):  
Mass Spectra ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Ion Species ◽  
Secondary Ion

Growth Rate and Characterization of Silicon Oxide Films Grown in  N 2 O  Atmosphere in a Rapid Thermal Processor

1994 ◽  
Vol 141 (1) ◽  
pp. 259-263 ◽  
Author(s):  
P. Lange ◽  
H. Bernt ◽  
E. Hartmannsgruber ◽  
F. Naumann
Keyword(s):  
Growth Rate ◽  
Silicon Oxide ◽  
Oxide Films

Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

1990 ◽  
Vol 193-194 ◽  
pp. 595-609 ◽  
Author(s):  
S.V Nguyen ◽  
D Dobuzinsky ◽  
D Dopp ◽  
R Gleason ◽  
M Gibson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
High Quality

Liquid Secondary Ion Mass Spectrometry and Collision-induced Dissociation Mass Spectrometry of Sulfonamide Derivatives of meso-Tetraphenylporphyrin

1999 ◽  
Vol 03 (03) ◽  
pp. 172-179 ◽  
Author(s):  
M. ROSÁRIO M. DOMINGUES ◽  
M. GRAÇA SANTANA-MARQUES ◽  
A. J. FERRRER-CORREIA ◽  
AUGUSTO C. TOMÉ ◽  
MARIA G. P. M. S. NEVES ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectra ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Ions ◽  
Collision Induced Dissociation ◽  
Fragment Ions ◽  
Ion Mass Spectrometry ◽  
Derivatives Of ◽  
Secondary Ion

Liquid secondary ion mass spectrometry (LSIMS) and collision-induced dissociation (CID) were used for the characterization of sulfonamide derivatives of meso-tetraphenylporphyrin (TPP). The spectra obtained using LSIMS show abundant molecular ions and fragment ions from losses of the sulfonamide moieties. The main fragmentation observed in the LSI mass spectra and in the CID spectra of the protonated or cationized molecules involves the loss of one sulfonamide group. In addition, in the CID spectra of these compounds the fragment ions formed by the elimination of two, three and/or four sulfonamide groups are also observed. The CID spectra of the protonated or cationized molecules of these derivatives do not display the ions formed by the cleavage of the S - N bond which have been reported for other sulfonamide compounds. The LSI mass spectra and CID spectra of sulfonamide derivatives of meso-tetraphenylporphyrin provide an easy and reliable means of identification of the number and nature of sulfonamide groups in the porphyrinic ring.

Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions

Vacuum ◽  
2004 ◽  
Vol 75 (4) ◽  
pp. 307-312 ◽  
Author(s):  
F Hamelmann ◽  
A Aschentrup ◽  
A Brechling ◽  
U Heinzmann ◽  
A Gushterov ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Thin Silicon

Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

2016 ◽  
Vol 54 ◽  
pp. 20-28 ◽  
Author(s):  
Yaqiong Li ◽  
Lucas Nana Wiredu Damoah ◽  
Lifeng Zhang
Keyword(s):  
Silicon Oxide ◽  
Oxide Films

MBE growth and characterization of buried silicon oxide films on Si(100)

1996 ◽  
Vol 280 (1-2) ◽  
pp. 107-111 ◽  
Author(s):  
M. Hacke ◽  
H.L. Bay ◽  
S. Mantl
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Mbe Growth
Sign in / Sign up

Export Citation Format

Share Document