Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors

2014 ◽  
Vol 312 ◽  
pp. 157-161 ◽  
Author(s):  
M. Molnár ◽  
D. Donoval ◽  
J. Kuzmík ◽  
J. Marek ◽  
A. Chvála ◽  
...  
Keyword(s):  
Simulation Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Interface Traps ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

2019 ◽  
Vol 28 (6) ◽  
pp. 067304 ◽  
Author(s):  
Si-Qin-Gao-Wa Bao ◽  
Xiao-Hua Ma ◽  
Wei-Wei Chen ◽  
Ling Yang ◽  
Bin Hou ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Interface Traps ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
Sign in / Sign up

Export Citation Format

Share Document