Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

2016 ◽  
Vol 384 ◽  
pp. 18-26 ◽  
Author(s):  
Małgorzata Norek ◽  
Grzegorz Łuka ◽  
Maksymilian Włodarski
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Plasmonic Enhancement ◽  
Uv Emission

Optical Properties of Nanostructured Zinc Oxides Deposited on Silicon Substrates

2011 ◽  
Vol 312-315 ◽  
pp. 1132-1136 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Zuraida Khusaimi ◽  
Mohamad Mahmood Rusop
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
Annealing Temperatures ◽  
Uv Emission ◽  
Zinc Oxides ◽  
Optically Transparent

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.

scholarly journals Study of Ultraviolet Emission Spectra in ZnO Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Y. M. Lu ◽  
X. P. Li ◽  
P. J. Cao ◽  
S. C. Su ◽  
F. Jia ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Free Exciton ◽  
Emission Spectra ◽  
Low Energy ◽  
Zno Thin Films ◽  
Ultraviolet Emission ◽  
Exciton Transition ◽  
Pl Spectra ◽  
Uv Emission

Photoluminescence (PL) of ZnO thin films prepared on c-Al2O3substrates by pulsed laser deposition (PLD) are investigated. For all samples, roomtemperature (RT) spectra show a strong band-edge ultraviolet (UV) emission with a pronounced low-energy band tail. The origin of this UV emission is analyzed by the temperature dependence of PL spectra. The result shows that the UV emission at RT contains different recombination processes. At low temperature donor-bound exciton (D0X) emission plays a major role in PL spectra, while the free exciton transition (FX) gradually dominates the spectrum with increasing temperatures. It notes that at low temperature an emission band (FA) appears in low energy side of D0X and FX and can survive up to RT. Further confirmation shows that the origin of the band FA can be attributed to the transitions of conduction band electrons to acceptors (e, A0), in which the acceptor binding energy is estimated to be approximately 121 meV. It is concluded that at room temperature UV emission originates from the corporate contributions of the free exciton and free electrons-to-acceptor transitions.

Effects of Post-Annealing on the Electrical and Optical Properties of ZnO Thin Films Grown on Al2O3 Substrates by Atomic Layer Epitaxy

2007 ◽  
Vol 544-545 ◽  
pp. 729-732 ◽  
Author(s):  
Chong Mu Lee ◽  
Young Joon Cho ◽  
Ho Jin Kim ◽  
Wang Woo Lee ◽  
Hyoun Woo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Optical Properties ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Annealing Atmosphere ◽  
Oxygen Annealing ◽  
Uv Emission

Influence of nitrogen and oxygen annealing atmospheres on the carrier concentration, carrier mobility, electrical resistivity and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD) were compared. X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. The UV emission intensity for oxygen annealing is stronger than that for nitrogen annealing in the case of annealing at 600°C, but the difference decreases with the Increase of annealing temperature. The strongest UV emission is obtained by oxygen annealing at 800°C. However, from the viewpoint of electrical resistivity annealing at 1,000°C in either an oxygen or a nitrogen atmosphere is more desirable. Taking both the PL and electrical properties into consideration it may be concluded that optimum annealing condition for ZnO thin films grown on the sapphire substrate by ALD is an annealing temperature of 900°C and an annealing atmosphere of oxygen although the effects of annealing atmosphere on the optical and electrical properties are not so significant.

scholarly journals Enhanced UV emission of Li–Y co-doped ZnO thin films via spray pyrolysis

2019 ◽  
Vol 808 ◽  
pp. 151710
Author(s):  
O. Bazta ◽  
A. Urbieta ◽  
J. Piqueras ◽  
P. Fernández ◽  
M. Addou ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Zno Thin Films ◽  
Uv Emission ◽  
Doped Zno ◽  
Co Doped

scholarly journals Influence of Codoping on the Optical Properties of ZnO Thin Films Synthesized on Glass Substrate by Chemical Bath Deposition Method

2014 ◽  
Vol 2014 ◽  
pp. 1-9 ◽  
Author(s):  
G. Shanmuganathan ◽  
I. B. Shameem Banu
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Hexagonal Structure ◽  
Chemical Bath Deposition Method ◽  
Zno Thin Films ◽  
Deposition Method ◽  
Hexagonal Wurtzite Crystal Structure ◽  
Uv Emission ◽  
Doped Zno ◽  
Gradual Variation

Fe and K simultaneously doped ZnO thin films Zn0.99K0.01(Fe)xO (x=1, 2, 3, and 4%) were synthesized by chemical bath deposition method. The XRD investigation reveals that all the doped ZnO thin films are in hexagonal wurtzite crystal structure without impurity phases. With increase in Fe concentration, the growth of thin films alongcaxis is evident from the XRD which indicates the increase in intensity along (002) direction. The same is visible from the surface morphology which shows the formation of hexagonal structure for higher Fe concentration. The topography shows gradual variation with Fe incorporation. The optical energy band gap obtained from the transmittance spectrum decreases from 3.42 to 3.06 eV with increase in Fe concentration indicating the red shift and this trend is consistent with the earlier experimental results. The UV emission is centered around 3.59 eV. The optical constants such as refractive index, extinction coefficient, and absorption coefficient which are essential for the optoelectronic applications were also determined.

Growth and characterization of pulsed laser deposited ZnO thin films

Open Physics ◽  
2007 ◽  
Vol 5 (3) ◽  
Author(s):  
Andrej Vincze ◽  
Jaroslav Bruncko ◽  
Miroslav Michalka ◽  
Daniel Figura
Keyword(s):  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Pulsed Laser ◽  
Target Material ◽  
Zno Thin Films ◽  
Zno Films ◽  
Technological Parameters ◽  
Force Microscopy ◽  
Uv Emission ◽  
Atomic Force

AbstractOne of the most important and promising materials from metal oxides is ZnO with specific properties for near UV emission and absorption optical devices. The properties of ZnO thin films strongly depend on the deposition method. Among them, pulsed laser deposition (PLD) plays an important role for preparing various kinds of ZnO films, e.g. doped, undoped, monocrystalline, and polycrystalline. Different approaches — ablation of sintered ZnO pellets or pure metallic Zn as target material are described. This contribution is comparing properties of ZnO thin films deposited from pure Zn target in oxygen atmosphere and those deposited from sintered ZnO target. There is a close connection between final thin film properties and PLD conditions. The surface properties of differently grown ZnO thin films are measured by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, different approaches — ablation of sintered ZnO pellet or pure metallic Zn as target materials are described. The main results characterize typical properties of ZnO films versus technological parameters are presented.

Layer-by-Layer Nanoparticles ZnO Thin Films Prepared by Sol-Gel Method

2011 ◽  
Vol 403-408 ◽  
pp. 1178-1182 ◽  
Author(s):  
Shafinaz Sobihana Shariffudin ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Quartz Substrate ◽  
Zinc Acetate Dihydrate ◽  
Sol Gel ◽  
Optical Transmittance ◽  
Oxygen Adsorption ◽  
Zno Thin Films ◽  
Layer By Layer ◽  
Uv Emission ◽  
Yellow Orange

Nanoparticles ZnO thin films have been deposited using sol-gel spin coating technique. A 0.4M sol of ZnO had been prepared by dissolving zinc acetate dihydrate in monoethanolamine (MEA), and 2-methoxyethanol as a stabilizer. Thin films are then spin coated onto quartz substrate with rotation speed of 3000rpm. After each layer, the samples were heated at 150 oC and annealed at 550 oC; which are defined as layer-by-layer process. The aim of this paper is to study the effect of annealing time to the structural, electrical and optical properties of the films. XRD result shows highest peak observed from sample annealed for 1 hour at (102) and (002) orientation. Calculation shows that the film annealed for 1 hour gives lower resistivity at 92.29Ω.cm which is due to the oxygen adsorption and good crystalline quality. Photoluminescence measurements exhibit UV emission centred at 380 nm and yellow-orange emission centred at 580 nm. Optical transmittance of the films show transparency above 70% for sample annealed for 30 minutes.

Two different mechanisms on UV emission enhancement in Ag-doped ZnO thin films

2015 ◽  
Vol 158 ◽  
pp. 396-400 ◽  
Author(s):  
Linhua Xu ◽  
Gaige Zheng ◽  
Lilong Zhao ◽  
Shixin Pei
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Uv Emission ◽  
Emission Enhancement ◽  
Doped Zno
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