UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(–H) thin films for 45 nm technology node

2011 ◽  
Vol 11 (5) ◽  
pp. S109-S113 ◽  
Author(s):  
Chi Kyu Choi ◽  
Chang Young Kim ◽  
R. Navamathavan ◽  
Heang Seuk Lee ◽  
Jong-Kwan Woo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Uv Irradiation ◽  
Irradiation Effects ◽  
Technology Node ◽  
Bonding Structure ◽  
Low K

Deposition temperature and UV irradiation effects on the H2S sensing properties of Te thin films

2015 ◽  
Vol 119 (2) ◽  
pp. 659-665
Author(s):  
M. Manouchehrian ◽  
M. M. Larijani ◽  
S. M. Elahi ◽  
M. A. Moghri Moazzen
Keyword(s):  
Thin Films ◽  
Uv Irradiation ◽  
Deposition Temperature ◽  
Irradiation Effects ◽  
Sensing Properties

Electrical properties of nanoporous F doped SiO2 low-k thin films prepared by sol-gel method with catalyst HF

2006 ◽  
Vol 13 (3-4) ◽  
pp. 413-417 ◽  
Author(s):  
Zhi-Wei He ◽  
Xue-Qin Liu ◽  
Da-Yin Xu ◽  
Yong-Ping Guo ◽  
Yin-Yue Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Low K

scholarly journals Effect of localized UV irradiation on the crystallinity and electrical properties of dip-coated polythiophene thin films

RSC Advances ◽  
2020 ◽  
Vol 10 (56) ◽  
pp. 34130-34136
Author(s):  
So Young Park ◽  
Eun Hye Kwon ◽  
Yeong Don Park
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Uv Irradiation ◽  
Uv Light ◽  
P3ht Film ◽  
Enhanced Crystallinity

When the top part of the solution was irradiated with UV light, the dip-coated P3HT film showed enhanced crystallinity and electrical properties.

Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Pore Diameter ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Mechanical And Electrical Properties ◽  
Low K ◽  
Deposited Films

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

UV irradiation effects on TiO2 thin films

2008 ◽  
Vol 5 (5) ◽  
pp. 1164-1167 ◽  
Author(s):  
M. Fernández-Rodríguez ◽  
V. J. Rico ◽  
A. R. González-Elipe ◽  
A. Álvarez-Herrero
Keyword(s):  
Thin Films ◽  
Uv Irradiation ◽  
Irradiation Effects ◽  
Tio2 Thin Films
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