Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Pore Diameter ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Mechanical And Electrical Properties ◽  
Low K ◽  
Deposited Films

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Microtexture Dependence of Mechanical and Electrical Properties of Gold Thin Films Used for Micro Bumps of 3D Stacking Structures

2020 ◽  
Author(s):  
Genta Nakauchi ◽  
Shota Akasaki ◽  
Hideo Miura
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Indentation Test ◽  
Electron Back Scatter Diffraction ◽  
Effective Lifetime ◽  
Mechanical And Electrical Properties ◽  
Gold Thin Films ◽  
3D Stacking

Abstract The variation of their crystallinity, in other words, the order of atom arrangement of grain boundaries in electroplated gold thin films was investigated by changing their manufacturing conditions. Then, the effect of the crystallinity on both their mechanical and electrical properties was measured by using nano-indentation test and electromigration test. The crystallinity of the gold thin films was varied by changing the under-layer material used for electroplating. Also, the micro texture of gold thin films was evaluated by EBSD (Electron Back-Scatter Diffraction) and XRD (X-Ray Diffraction). It was clarified that the crystallinity of the electroplated gold thin films changed drastically depending on the crystallinity of the under-layer materials and electroplating conditions such as current density and temperature. This variation of the crystallinity should have caused wide variation of mechanical properties of the films. In addition, their mechanical properties such as Young’s modulus and hardness showed wide variation by about 3 times comparing with those of bulk gold. Similarly, the EM resistance of the electroplated gold bumps varied drastically depending on the ratio of porous grain boundaries and their crystallinity. Both the ratio and crystallinity also varied depending on the crystallinity of the under layer and electroplating conditions. The effective lifetime of the gold bumps was successfully predicted by considering both the crystallinity and residual stress of fine gold bumps. The lifetime varied more than 10 times as a strong function of the crystallinity of grain boundaries in the fine bumps. Therefore, it is very important to control the crystallinity of the under-layer for electroplating in order to control the distribution of the mechanical properties and reliability of the electroplated gold thin films.

Thermal conductivity study of porous low K dielectric materials

1999 ◽  
Vol 565 ◽  
Author(s):  
Chuan Hu ◽  
Michael Morgen ◽  
Paul S. Ho ◽  
Anurag Jain ◽  
William. N. Gill ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Omega Method ◽  
3 Omega ◽  
Low Dielectric Constant Materials ◽  
Low K ◽  
Method Analysis

AbstractA quantitative characterization of the thermal properties is required to assess the thermal performance of low dielectric constant materials. Recently we have developed a technique based on the 3-omega method for measuring the thermal conductivity of porous dielectric thin films. In this paper we present the results on the measurements of thermal conductivity of thin porous films using this method. A finite element method analysis is used to evaluate the approximations used in the measurement. Two porosity-weighted thermal resistor models are proposed to interpret the results. By studying the dependence of the thermal conductivity on porosity, we are able to discuss the scaling rule of thermal conductivity. Additionally, a steady state layered heater model is used for evaluating the significance of introducing porous ILDs into an interconnect structure.

Electrical, Mechanical, and Structural Properties of Fluoro-Containing Poly(silsesquioxanes) Based Porous Low k Thin Films

2003 ◽  
Vol 766 ◽  
Author(s):  
Jingyu Hyeon-Lee ◽  
Jihoon Rhee ◽  
Jungbae Kim ◽  
Jin-Heong Yim ◽  
Seok Chang
Keyword(s):  
Thin Films ◽  
Pore Size ◽  
Dielectric Constants ◽  
Commercial Application ◽  
Porous Films ◽  
Low Dielectric ◽  
Nanoporous Films ◽  
Positronium Annihilation ◽  
Positronium Annihilation Lifetime Spectroscopy ◽  
Low K

AbstractLow dielectric fluoro-containing poly(silsesquioxanes) (PSSQs) have been synthesized using trifluoropropyl trimethoxysilane (TFPTMS), methyl trimethoxysilane (MTMS), and 2, 4, 6, 8-tetramethyl-2, 4, 6, 8-tetra(trimethoxysilylethyl) cyclotetrasiloxane. The properties of fluorocontaining PSSQs based thin films were studied by electrical, mechanical, and structural characterization. Film was spun on a silicon substrate, baked at 150°C and 250°C for 1 minute, respectively, and cured in the furnace at 420°C for 1 hour under vacuum condition. Thermally decomposable trifluoropropyl groups of the fluoro-containing PSSQ were served as a pore generator and partially contributed to lower a dielectric constant. â-cyclodextrin (CD) was also employed as a pore generator. The concentration of the pore generator in the film was varied from 0 to 30 %. The dielectric constants of the porous PSSQ films were found to be in the range of 2.7 – 1.9 (at 100 kHz). Hardness and Young's modulus of the films were measured by nano-indentation. The elastic modulus and hardness of the porous films were well correlated with the concentration of the pore generators. Positronium Annihilation Lifetime Spectroscopy (PALS) was employed to characterize a pore size of the porous fluoro-containing PSSQ film. The pore size of the film was less than 2.2 nm. The nanoporous films showed quite promising properties for commercial application.

Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

2015 ◽  
Vol 1791 ◽  
pp. 15-20 ◽  
Author(s):  
Karina B. Klepper ◽  
Ville Miikkulainen ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
Ming Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carboxylic Acids ◽  
Material Properties ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Leakage Currents ◽  
Low Dielectric ◽  
Low K ◽  
Trimethyl Aluminum

ABSTRACTThe material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

The Effect of Porogen on Physical Properties in MTMS-BTMSE Spin-on Organosilicates

2005 ◽  
Vol 875 ◽  
Author(s):  
B.R. Kim ◽  
J. M. Son ◽  
J.W. Kang ◽  
K.Y. Lee ◽  
K.K. Kang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Porous Films ◽  
Low Dielectric ◽  
Lower Dielectric Constant ◽  
Superior Mechanical Properties ◽  
Lift Off ◽  
Rc Delay ◽  
Low K

AbstractDecreasing the circuit dimensions is driving the need for low-k materials with a lower dielectric constant to reduce RC delay, crosstalk, and power consumption. In case of spin-on organosilicate low-k films, the incorporation of a porogen is regarded as the only foreseeable route to decrease dielectric constant of 2.2 or below by changing a packing density. In this study, MTMS-BTMSE copolymers that had superior mechanical properties than MSSQ were blended with decomposable polymers as pore generators. While adding up to 40 wt % porogen into MTMS:BTMSE=100:50 matrix, optical, electrical, and mechanical properties were measured and the pore structure was also characterized by PALS. The result confirmed that there existed a tradeoff in attaining the low dielectric constant and desirable mechanical strength, and no more pores than necessary to achieve the dielectric objective should be incorporated. When the dielectric constant was fixed to approximately 2.3 by controlling BTMSE and porogen contents simultaneously, the thermo-mechanical properties of the porous films were also investigated for the comparison purpose. Under the same dielectric constant, the increase in BTMSE and porogen contents led to improvement in modulus measured by the nanoindentation technique but deterioration of adhesion strength obtained by the modified edge lift-off test.

On the mechanical and electrical properties of self-assembly-based organosilicate porous films

2017 ◽  
Vol 5 (33) ◽  
pp. 8599-8607 ◽  
Author(s):  
M. Redzheb ◽  
S. Armini ◽  
T. Berger ◽  
M. Jacobs ◽  
M. Krishtab ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Self Assembly ◽  
Sol Gel ◽  
Porous Films ◽  
Mechanical And Electrical Properties

The effect of the replacement of Si–O–Si by Si–CH2–Si groups on the mechanical and electrical properties of silica-based hybrid sol–gel thin films is reported.

Determination of the Modulus and Hardness of Spin-on Zeolite Low-K Thin Films

2005 ◽  
Vol 880 ◽  
Author(s):  
Mark Johnson ◽  
Zijian Li ◽  
Yushan Yan ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Material Selection ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Depth Sensing ◽  
New Class ◽  
Low Dielectric ◽  
Pure Silica ◽  
Low K

AbstractWith the semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant (low-k) materials to replace traditional dense SiO2 based insulators. In order to survive the multi-step integration process and provide reliable material and structure for the desired integrated circuit (IC) functions, the new low-k materials have to be mechanically strong and stable. Thus the material selection and mechanical characterization are vital in the successful development of next generation low-k dielectrics. A new class of low-k dielectric materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus measurements of the zeolite thin films are found to be significantly higher than that of other porous silicates with similar porosity and dielectric constants. Correlations of the mechanical, microstructural and electrical properties are discussed in detail.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

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