High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell

2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
High Growth Rate ◽  
Solid Oxide ◽  
Oxide Thin Film ◽  
Oxide Fuel ◽  
Layer Deposition

High Growth Rate SiO2 by Atomic Layer Deposition

2019 ◽  
Vol 13 (1) ◽  
pp. 453-457 ◽  
Author(s):  
Raija Matero ◽  
Suvi Haukka ◽  
Marko Tuominen
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Layer Deposition

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors

2005 ◽  
Vol 11 (10) ◽  
pp. 415-419 ◽  
Author(s):  
J. Päiväsaari ◽  
J. Niinistö ◽  
K. Arstila ◽  
K. Kukli ◽  
M. Putkonen ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Erbium Oxide ◽  
Oxide Thin Films ◽  
Layer Deposition

scholarly journals Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (44) ◽  
pp. 25014-25020 ◽  
Author(s):  
So-Jung Yoon ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
Woong-Chul Shin ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
Bias Temperature Stress

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm).

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