Influence of isovalent Cd doping concentration and temperature on electric and dielectric properties of ZnO films

Author(s):  
Büşra Altun ◽  
Ahmad Ajjaq ◽  
Ali Orkun Çağırtekin ◽  
Irmak Karaduman Er ◽  
Fatma Sarf ◽  
...  
2006 ◽  
Vol 287 (1) ◽  
pp. 78-84 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Wei-Chun Chen ◽  
Fang-I Lai ◽  
Chin-Pao Cheng ◽  
Hao-Chung Kuo ◽  
...  

2006 ◽  
Vol 515 (4) ◽  
pp. 2464-2470 ◽  
Author(s):  
G. Yogeeswaran ◽  
C.R. Chenthamarakshan ◽  
A. Seshadri ◽  
N.R. de Tacconi ◽  
K. Rajeshwar

2018 ◽  
Vol 15 (3) ◽  
pp. 218-223 ◽  
Author(s):  
T. Sreenivasulu Reddy ◽  
G. Phaneendra Reddy ◽  
K.T. Ramakrishna Reddy

Spray deposited Mo-doped zinc oxide (MZO) films were grown on glass substrates at different substrate temperatures (Ts)that varied in the range of 300°C-450 °C at aconstant Mo-doping concentration of 2 at. %.XRD spectra revealed better crystallinity of films prepared atTs400 °C. FTIR spectra showed the vibrational modes related toZn–O bonding.Photoluminescence spectra of MZO films showed a peakrelated toviolet emissionsbetween 400 nm and 420 nm. Electrical analysis showed n type semiconducting nature of the films and the films grown at Ts= 400 °C hadlow resistivity and high mobility.Adetailed analysis on theeffect of substrate temperatureon photoluminescence and electrical propertiesof MZO films wasdiscussed and reported.


2015 ◽  
Vol 60 (7) ◽  
pp. 41-46
Author(s):  
Nguyen Dinh Lam ◽  
Le Thuy Trang ◽  
Nguyen Thi Mui ◽  
Pham Van Vinh ◽  
Vuong Van Cuong ◽  
...  

2009 ◽  
Vol 620-622 ◽  
pp. 735-740 ◽  
Author(s):  
Feng Pan ◽  
Xue Jing Liu ◽  
Yu Chao Yang ◽  
Cheng Song ◽  
Fei Zeng

In this paper, we report the multiferroic and piezoelectric behavior observed in transition-metal doped ZnO films. The experimental results indicated that the Co-doped ZnO films deposited by magnetron sputtering possess a Curie temperature higher than 700K, and the magnetic moments of Co are intimatedly correlated to the doping concentration and the substrate. A giant magnetic moment of 6.1 B/Co is observed in (4 at.%) Co-doped ZnO films. Ferroelectric and ferromagnetic behaviors simultaneously were also obtained in V and Cr doped ZnO films on Pt(111)/Ti/SiO2/Si(100) substrates by reactive sputtering method, revealing a multiferroic nature. The high piezoelectric d33 coefficient 80-120 pm/V has also been achieved by Cr and V substitutions, which could make Cr-doped or V-doped ZnO a promising material in piezoelectric devices.


2019 ◽  
Vol 26 (05) ◽  
pp. 1850197 ◽  
Author(s):  
SELMA M. H. AL-JAWAD ◽  
SABAH H. SABEEH ◽  
ALI A. TAHA ◽  
HUSSEIN A. JASSIM

Pure and Fe-doped zinc oxide (ZnO) sol–gel thin films were deposited by spin-coating process. Pure ZnO and Fe–ZnO films, containing Fe of 2–8[Formula: see text]wt.%, were annealed at 500∘C for 2[Formula: see text]h. All prepared thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–visible (UV–vis) spectroscopy. XRD studies show the polycrystalline nature with hexagonal wurtzite structure of pure ZnO and Fe–ZnO thin films. The crystallite size of the prepared samples reduced with increasing Fe doping concentrations. AFM and SEM results indicated that the average grain size decreased as Fe doping concentration increased. The transmittance spectra were then recorded at wavelengths ranging from 300[Formula: see text]nm to 1000[Formula: see text]nm. The films produced yielded high transmission at visible regions. The optical bandgap energy of spin-coated films also decreased as Fe doping concentration increased. In particular, their optical bandgap energies were 3.75, 3.6, 3.5, 3.45 and 3.3 eV at 0-, 2-, 4-, 6- and 8-wt.% Fe concentrations, respectively. Antibacterial activities of pure ZnO and Fe–ZnO against E. coli and S. aureus were evaluated by international recognized test (JIS Z 2801). The results showed that pure and Fe-doped ZnO thin films have antibacterial inhibition zone against E. coli and S. aureus. Gram-positive bacteria seemed be more resistant to pure and Fe-doped ZnO thin films than gram-negative bacteria. The test shows an incremental increase in antibacterial activity of the thin films when dopant ratio increased under UV light.


2014 ◽  
Vol 21 (03) ◽  
pp. 1450040 ◽  
Author(s):  
YING XU ◽  
YANQING CAI ◽  
LINYAN HOU ◽  
PENGHUA MA

Al doped ZnO (AZO) thin films were deposited on a glass substrate by atmospheric pressure chemical vapor deposition (APCVD) method. Effect of Al doping concentration on microstructure, photoelectric properties and doped mechanism of AZO thin films were investigated. The analysis results revealed that the structural properties of the films possessed crystalline structure with a preferred (002) orientation. The best crystallization quality and minimum electrical resistivity was obtained at 5 at.% Al doped films and the minimum resistivity was 6.6 × 10-4 Ω ⋅ cm. Uniform granular grains were observed on the surface of AZO films, and the average optical transmittance was above 80% in the visible range. The doped mechanism of AZO films was analyzed as follows. With Al doping in ZnO films, AlZn substitute and Ali interstice were produced, which decreased the resistivity of films. While after the limit value and with the continuing increase of Al doping concentration, free electrons were consumed and the resistivity of films increased.


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